Search results for " surface"
showing 10 items of 2838 documents
Controlling the oxidation processes of Zn nanoparticles produced by pulsed laser ablation in aqueous solution
2016
We used online UV-VIS optical absorption and photoluminescence spectra, acquired during and after pulsed laser ablation of a Zinc plate in aqueous solution, to investigate the effect of the laser repetition rate and liquid environment on the oxidation processes of the produced nanoparticles. A transient Zn/ZnO core-shell structure was revealed by the coexistence of an absorption peak around 5.0 eV due to Zn surface plasmon resonance and of an edge at 3.4 eV coming from wurtzite ZnO. The growth kinetics of ZnO at the various repetition rates, selectively probed by the excitonic emission at 3.3 eV, began immediately at the onset of laser ablation and was largely independent of the repetition …
Microwave-assisted synthesis of anhydrous CdS nanoparticles in a water-oil microemulsion.
2006
Abstract Microwave irradiation at a frequency of 2.45 GHz and a power ranging between 22 and 30 W was used, in a water–oil microemulsion at 35 ± 2 ° C , to obtain stable, small, crystalline, anhydrous CdS nanoparticles exhibiting enhanced luminescence properties. The process of nanoparticles growth at different irradiation times was followed by UV–vis spectroscopy. It was observed that irradiated nanoparticles grew faster and their size reached a constant value. The final mean nanoparticle diameter was 2.7 nm, smaller than that observed in a non-irradiated sample, in which particle dimensions slowly increased even after 10 h. This finding was confirmed by high resolution transmission electr…
Light-Emitting Electrochemical Cells Using Cyanine Dyes as the Active Components
2013
Light-emitting electrochemical cells (LECs) based on cyanine molecules were prepared. High photoluminescence quantum yields were obtained for host-guest films using two cyanine dyes, reaching 27%. Sandwiching these films in between two electrodes allows for very stable near-infrared emission with a maximum radiant flux of 1.7 W m(-2) at an external quantum efficiency of 0.44%.
Cd12Ag32(SePh)36: Non-Noble Metal Doped Silver Nanoclusters
2019
While there are numerous recent reports on doping of a ligand-protected noble metal nanocluster (e.g., Au and Ag) with another noble metal, non-noble metal (e.g., Cd) doping remains challenging. Here, we design a phosphine-assisted synthetic strategy and synthesize a Cd doped Ag nanocluster, Cd12Ag32(SePh)36 (SePh: selenophenolate), which exhibits characteristic UV–vis absorption features and rare near-infrared (NIR) photoluminescence at ∼1020 nm. The X-ray single crystal structure reveals an asymmetric two-shell Ag4@Ag24 metal kernel protected by four nonplanar Cd3Ag(SePh)9 metal–ligand frameworks. Furthermore, the electronic structure analysis shows that the cluster is a 20-electron “supe…
Novel metal–organic frameworks based on 5-bromonicotinic acid: Multifunctional materials with H2 purification capabilities
2012
Two new metal–organic frameworks based on 5-bromonicotinic acid complexes [Cd(5-BrNic)2]n (1) and [Co(5-BrNic)2(H2O)]n (2) have been synthesized by hydrothermal reactions of this ligand with cadmium and cobalt metallic(II) salts in the presence of water. Compound 1 displays intense photoluminescence properties in the solid state at room temperature, while 2 exhibits an antiferromagnetic interaction between Co(II) ions with a J value of −4.1 cm−1. Experimental studies, backed up by Monte Carlo simulations about adsorption, pore size distribution and accessible surface area reveal the capability of 2 for H2 purification applications.
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
2007
We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified …
Oxygen-defective ZnO films with various nanostructures prepared via a rapid one-step process and corresponding photocatalytic degradation application…
2018
Abstract The deposition of oxygen-defective ZnO films exhibiting varied nanostructures via Solution Precursor Plasma Spray (SPPS) route, a one-step, minute-scaled duration and large scale method, is reported. The in situ formation of oxygen vacancies in ZnO films was confirmed by UV–Visible, Raman and photoluminescence (PL) spectroscopy and the as-prepared samples exhibit a bandgap as low as 3.02 eV. Density functional theory (DFT) simulation demonstrates that the polarization of ZnO is enhanced by the created oxygen vacancies, leading to substantially improved photocatalytic activity. The comparative experiments also revealed that forming and preserving appropriate ZnO precursor clusters i…
Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
2000
Scanning electron microscopy, micro-Raman, and photoluminescence (PL) measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the tr…
Modulation of the electronic properties of GaN films by surface acoustic waves
2003
We report on the interaction between photogenerated electron-hole pairs and surface acoustic waves (SAW) in GaN films grown on sapphire substrates. The spatial separation of photogenerated carriers by the piezoelectric field of the SAW is evidenced by the quenching of the photoluminescence (PL) intensity. The quenching levels in GaN are significantly smaller than those measured in GaAs under similar conditions. The latter is attributed to the lower exciton ionization efficiency and carrier separation probabilities mediated by the piezoelectric effect. The PL spectra also evidence energy shifts and broadenings of the electronic transitions, which are attributed to the band gap modulation by …
Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy.
2006
Zn1−xCdxO(11math0) films have been grown on (01math2) sapphire (r–plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by Rutherford backscattering spectrometry. Higher Cd contents lead to the coexistence of Zn1−xCdxO alloys of different compositions within the same film. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.93 eV for the highest Cd concentration (8.5 at. %). The lattice deformation, due to Cd incorporation, has been described using a n…