Search results for " system"

Efficient generation of restricted growth words

2013

A length n restricted growth word is a word w=w"1w"2...w"n over the set of integers where w"1=0 and each w"i, i>1, lies between 0 and the value of a word statistics of the prefix w"1w"2...w"i"-"1 of w, plus one. Restricted growth words simultaneously generalize combinatorial objects as restricted growth functions, staircase words and ascent or binary sequences. Here we give a generic generating algorithm for restricted growth words. It produces a Gray code and runs in constant average time provided that the corresponding statistics has some local properties.

Constant sign and nodal solutions for nonlinear robin equations with locally defined source term

2020

We consider a parametric Robin problem driven by a nonlinear, nonhomogeneous differential operator which includes as special cases the p-Laplacian and the (p,q)-Laplacian. The source term is parametric and only locally defined (that is, in a neighborhood of zero). Using suitable cut-off techniques together with variational tools and comparison principles, we show that for all big values of the parameter, the problem has at least three nontrivial smooth solutions, all with sign information (positive, negative and nodal).

Restricted compositions and permutations: from old to new Gray codes

2011

Any Gray code for a set of combinatorial objects defines a total order relation on this set: x is less than y if and only if y occurs after x in the Gray code list. Let @? denote the order relation induced by the classical Gray code for the product set (the natural extension of the Binary Reflected Gray Code to k-ary tuples). The restriction of @? to the set of compositions and bounded compositions gives known Gray codes for those sets. Here we show that @? restricted to the set of bounded compositions of an interval yields still a Gray code. An n-composition of an interval is an n-tuple of integers whose sum lies between two integers; and the set of bounded n-compositions of an interval si…

Statistics-preserving bijections between classical and cyclic permutations

2012

Recently, Elizalde (2011) [2] has presented a bijection between the set C"n"+"1 of cyclic permutations on {1,2,...,n+1} and the set of permutations on {1,2,...,n} that preserves the descent set of the first n entries and the set of weak excedances. In this paper, we construct a bijection from C"n"+"1 to S"n that preserves the weak excedance set and that transfers quasi-fixed points into fixed points and left-to-right maxima into themselves. This induces a bijection from the set D"n of derangements to the set C"n"+"1^q of cycles without quasi-fixed points that preserves the weak excedance set. Moreover, we exhibit a kind of discrete continuity between C"n"+"1 and S"n that preserves at each s…

Intrusion Detection System Test Framework for SCADA Systems

2018

Optimum Design and Performance of an Electron Gun for a Ka-Band TWT

2019

This paper deals with optimum design and development of a thermionic electron gun to meet specified beam requirements within defined electric and geometric constraints for a Ka -band traveling wave tube (TWT) for space applications. The electron gun design is based on the Pierce method and carried out according to the iterative process indicated by Vaughan. The design of a periodic permanent magnet (PPM) beam focusing system for the stability of the beam is also required. A sensitivity analysis, by varying electric parameters and geometric parameters, is presented and taken into account as a fundamental role to the aim of optimizing the design of the Pierce gun. A cathode current value of 5…

A Novel Method for Characterizing Temperature Sensitivity of Silicon Wafers and Cells

2019

In this paper, we present a novel method to obtain temperature dependent lifetime and implied-open-circuit voltage (iV OC ) images of silicon wafers and solar cells. First, the method is validated by comparing the obtained values with global values acquired from lifetime measurements (for wafers) and current-voltage measurements (for cells). The method is then extended to acquire spatially resolved images of iV OC temperature coefficients of silicon wafers and cells. Potential applications of the proposed method are demonstrated by investigating the temperature coefficients of various regions across multi-crystalline silicon wafers and cells from different heights of two bricks with differe…

Pressure-induced instability of the fergusonite phase of EuNbO4 studied by in situ Raman spectroscopy, x-ray diffraction, and photoluminescence spect…

2020

In this article, we present high-pressure experimental investigations on EuNbO4, an interesting technologically important material, using synchrotron based x-ray powder diffraction, Raman spectroscopy, and europium photoluminescence measurements up to 39.2, 31.6, and 32.4 GPa, respectively. All three techniques show the stability of the ambient monoclinic phase until 20 GPa. Beyond that, a pressure-induced structural phase transition takes place with the coexistence of two phases over a wide pressure range. The structure of the high-pressure phase has been determined as orthorhombic (space group: Imma) with a volume discontinuity of nearly 9% at the transition indicating the nature of trans…

Measurements on partial discharge in on‐site operating power transformer: a case study

2018

This study presents the case study of a substation in-service power transformer referred to the on-site partial discharge (PD) detection and evaluation methods. An original methodology for simultaneous application of three methods is proposed: electrical, acoustic and ultra-high frequency. Transformer is powered by the power grid and no external generator is required according to the proposed methodology. Furthermore, several possibilities of applying these concurrent measurements and benefits of such solution in terms of result interpretation, interference resistance and on-site measurement applicability are indicated. The proposed methodology allows for a fast, accurate and secure PD diag…

Custom measurement system for memristor characterisation

2021

Abstract A cheap, compact and customisable characterisation system for memristor devices, working between ± 10 V, is presented. SPICE (Simulation Program with Integrated Circuit Emphasis) simulations are performed to verify the circuit feasibility and a proper software is developed to drive the system. The potentiality of the realised system is tested by performing several electrical measurements on both Cu/HfO2/Pt memristors and two-terminals commercial devices.