Search results for " theory."

showing 10 items of 22859 documents

Resistive communications based on neuristors

2017

Memristors are passive elements that allow us to store information using a single element per bit. However, this is not the only utility of the memristor. Considering the physical chemical structure of the element used, the memristor can function at the same time as memory and as a communication unit. This paper presents a new approach to the use of the memristor and develops the concept of resistive communication.

010302 applied physicsFOS: Computer and information sciencesResistive touchscreenCommunication unitHardware_MEMORYSTRUCTURESComputer science020208 electrical & electronic engineeringComputer Science - Emerging TechnologiesSingle element02 engineering and technologyFunction (mathematics)Memristor01 natural scienceslaw.inventionEmerging Technologies (cs.ET)Unified Modeling LanguagelawPhysical chemical0103 physical sciences0202 electrical engineering electronic engineering information engineeringElectronic engineeringElement (category theory)computercomputer.programming_language
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The helicoidal magnetic generator

2016

Recently helicoidal generator for the exploitation of sea wave energy has been proposed. This device can convert both the vertical and rotational movement of seawaves. The electrical energy generated by such a device must be converted and conditioned in order to match the instantaneous utility requirements and a power link from the sea to an interconnection is needed. In this paper, the authors propose a mathematical model of this device and preliminarily present a prototype of the machine.

010302 applied physicsInterconnectionEngineeringbusiness.industryLinear asynchronous generatorElectric potential energy05 social sciencesElectrical engineeringOcean EngineeringPermanent magnet synchronous generatorElectric machineSettore ING-IND/32 - Convertitori Macchine E Azionamenti ElettriciInductorOceanography01 natural sciencesPower (physics)Generator (circuit theory)Electromagnetic coil0502 economics and business0103 physical sciencesbusinessInstrumentation050203 business & managementEnergy (signal processing)Sea waves energy
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New fine structures resolved at the ELNES Ti-L2,3 edge spectra of anatase and rutile: comparison between experiment and calculation.

2010

Abstract Anatase and rutile Ti- L 2,3 edge spectra were measured in electron energy loss spectroscopy (EELS) using a transmission electron microscope (TEM) coupled to a CEOS Cs-probe corrector, an omega-type monochromator and an in-column omega-type energy filter fully corrected for 2nd order aberrations. Thanks to the high energy resolution, high electron probe current and high stability achieved under this instrumental configuration, new fine structures, never reported before, were resolved at the L 3 band of both rutile and anatase. The data suggest that new peaks also exist in the L 2 e g band. The experimental spectra are compared with multichannel multiple scattering (MMS) calculation…

010302 applied physicsLigand field theoryAnataseMaterials scienceScatteringElectron energy loss spectroscopyAnalytical chemistry02 engineering and technology[CHIM.MATE]Chemical Sciences/Material chemistry021001 nanoscience & nanotechnology01 natural sciencesMolecular physicsAtomic and Molecular Physics and OpticsSpectral lineElectronic Optical and Magnetic Materialslaw.inventionG bandlaw[ CHIM.MATE ] Chemical Sciences/Material chemistry0103 physical sciences0210 nano-technologyElectronic band structureInstrumentationComputingMilieux_MISCELLANEOUSMonochromator
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Exploring the transport properties of equatorially low coordinated erbium single ion magnets

2019

Single-molecule spin transport represents the lower limit of miniaturization of spintronic devices. These experiments, although extremely challenging, are key to understand the magneto-electronic properties of a molecule in a junction. In this context, theoretical screening of new magnetic molecules provides invaluable knowledge before carrying out sophisticated experiments. Herein, we investigate the transport properties of three equatorially low-coordinated erbium single ion magnets with C3v symmetry: Er[N(SiMe3⁠)2⁠]3⁠ (1), Er(btmsm)3⁠ (2) and Er(dbpc)3⁠ (3), where btmsm=bis(trimethylsilyl)methyl and dbpc=2,6-di-tert-butyl-p-cresolate. Our ligand field analysis, based on previous spectros…

010302 applied physicsLigand field theoryMaterials scienceCondensed Matter - Mesoscale and Nanoscale PhysicsSpintronicschemistry.chemical_elementFOS: Physical sciences02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsMagnetic fieldErbiumchemistryChemical physicsMagnet0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)MiniaturizationMolecule0210 nano-technologyGround state
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Electronic structure and magnetic order in Cu Zn(1−)O: A study GGA and GGA + U

2019

Abstract Based on density functional theory within GGA formalism, first-principles calculations were performed in order to study the structural, electronic, and magnetic properties of Cu-doped ZnO compound with dopant concentrations x = 0.028, 0.042, 0.056, and 0.125. It was found that CuxZn(1−x)O is ferromagnetic for both the closest and farthest impurity distances, but it is more stable energetically for the closest one. For all concentrations we obtained nearly half − metallic behavior. The calculations show that two substitutional Cu atoms introduce a magnetic moment of about 2.0 μB for all dopant concentrations. The results indicate that the magnetic ground state originates from the st…

010302 applied physicsMaterials scienceCondensed matter physicsDopantMagnetic momentSpins02 engineering and technologyElectronic structure021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceFerromagnetismImpurity0103 physical sciencesCondensed Matter::Strongly Correlated ElectronsDensity functional theoryElectrical and Electronic Engineering0210 nano-technologyGround statePhysica B: Condensed Matter
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Molecular dynamics simulations of nanometric metallic multilayers: Reactivity of the Ni-Al system

2011

The reactivity of a layered Ni-Al-Ni system is studied by means of molecular dynamics simulations, using an embedded-atom method type potential. The system, made of an fcc-Al layer embedded in fcc-Ni, is initially thermalized at the fixed temperature of 600 K. The early interdiffusion of Ni and Al at interfaces is followed by the massive diffusion of Ni in the Al layer and by the spontaneous phase formation of $B2$-NiAl. The solid-state reaction is associated with a rapid system heating, which further enhances the diffusion processes. For longer times, the system may partly lose some its $B2$-NiAl microstructure in favor of the formation of $L{1}_{2}$-${\mathrm{Ni}}_{3}\mathrm{Al}$. This st…

010302 applied physicsMaterials scienceNanotechnology02 engineering and technologyType (model theory)021001 nanoscience & nanotechnologyCondensed Matter PhysicsMicrostructure01 natural sciencesElectronic Optical and Magnetic MaterialsMetalMolecular dynamicsChemical physicsvisual_artPhase (matter)0103 physical sciencesvisual_art.visual_art_medium[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Reactivity (chemistry)PACS: 64.70.Nd 02.70.Ns 68.35.bdDiffusion (business)0210 nano-technologyLayer (electronics)
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Ab initio calculations of the electronic structure for Mn2+-doped YAlO3 crystals

2020

The electronic structure of Mn2+ ion substituted for the host Y atom in orthorhombic bulk YAlO3 crystals has been calculated by means of hybrid exchange-correlation functional HSE within density functional theory. The supercell approach has been used to simulate in Pbnm YAlO3 crystal the point defects, Mn-dopant and compensated the F+ center (oxygen vacancy with one trapped electron), to make unit cell neutral. Large 2 × 2 × 2 supercells of 160 atoms allow us to simulate substitutional point defect with concentration of about 3%. Mn2+ ions substituting for host Y form covalent Mn–O bonds, in opposite to the mostly ionic Y–O bond. The F center inserted to compensate the Mn2+ dopant in YAlO3 …

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)DopantBand gapGeneral Physics and AstronomyIonic bondingElectronic structure01 natural sciencesCrystallographic defectCrystalCrystallographyAb initio quantum chemistry methods0103 physical sciencesDensity functional theory010306 general physicsLow Temperature Physics
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Efficiency of H center stabilization in alkali halide crystals at low-temperature uniaxial deformation

2020

The efficiency of stabilization of H centers as well as its dependence on the degree of uniaxial deformation are considered within the framework of the modified geometric model of alkali halides. It is shown that stabilization of H centers is difficult in KI and RbI crystals, while in other NaCl-type crystals it becomes quite probable. Under uniaxial deformation, the interstitial space, in which the defect will be located, decreases, and the efficiency decrease. In the case of cesium halides, the orientation of the H centers takes place predominantly in the direction; therefore, the criteria for their stabilization differ from the NaCl-type alkali halide crystals. According to calculations,…

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)General Physics and AstronomyHalideUniaxial compressionchemistry.chemical_elementCenter (group theory)Deformation (meteorology)Alkali metal01 natural sciencesMolecular physicsIonchemistryCaesium0103 physical sciences010306 general physicsLow Temperature Physics
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Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations

2016

Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…

010302 applied physicsMaterials science[PHYS.NUCL]Physics [physics]/Nuclear Theory [nucl-th]Schottky barriercu(InDopingMetals and Alloys02 engineering and technologySurfaces and InterfacesInterface[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]021001 nanoscience & nanotechnology01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCrystallographyGa)Se 2MoSe2/Mo(110)Lattice (order)0103 physical sciencesMaterials ChemistryThin film solar cellThin-film solar cell0210 nano-technologySchottky barrier
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State-space formulation of scalar Preisach hysteresis model for rapid computation in time domain

2015

A state-space formulation of classical scalar Preisach model (CSPM) of hysteresis is proposed. The introduced state dynamics and memory interface allow to use the state equation, which is rapid in calculation, instead of the original Preisach equation. The main benefit of the proposed modeling approach is the reduced computational effort which requires only a single integration over the instantaneous line segment in the Preisach plane. Numerical evaluations of the computation time and model accuracy are provided in comparison to the CSPM which is taken as a reference model.

010302 applied physicsMemory interfacePreisach model of hysteresis0209 industrial biotechnologyApplied MathematicsComputationScalar (mathematics)02 engineering and technologySystems and Control (eess.SY)01 natural sciences020901 industrial engineering & automationLine segmentControl theoryModeling and Simulation0103 physical sciencesFOS: Electrical engineering electronic engineering information engineeringApplied mathematicsComputer Science - Systems and ControlTime domainReference modelMathematics
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