Search results for "Absorption band"
showing 10 items of 143 documents
Semiempirical PM5 molecular orbital study on chlorophylls and bacteriochlorophylls: Comparison of semiempirical,ab initio, and density functional res…
2003
The semiempirical PM5 method has been used to calculate fully optimized structures of magnesium-bacteriochlorin, magnesium-chlorin, magnesium-porphin, mesochlorophyll a, chlorophylls a, b, c(1), c(2), c(3), and d, and bacteriochlorophylls a, b, c, d, e, f, g, and h with all homologous structures. Hartree-Fock/6-31G* ab initio and density functional B3LYP/6-31G* methods were used to optimize structures of methyl chlorophyllide a, chlorophyll c(1), and methyl bacteriochlorophyllides a and c for comparison. Spectroscopic transition energies of the chromophores and their 1:1 or 1:2 solvent complexes were calculated with the Zindo/S CIS method. The self-consistent reaction field model was used t…
The interaction of native DNA with iron(III)- N ,N'-ethylene-bis(salicylideneiminato)-chloride.
2004
Abstract The interaction between native calf thymus deoxyribonucleic acid (DNA) and Fe III - N , N ′ -ethylene-bis (salicylideneiminato)-chloride, Fe(Salen)Cl, was investigated in aqueous solutions by UV–visible (UV–vis) absorption, circular dichroism (CD), thermal denaturation and viscosity measurements. The results obtained from CD, UV–vis and viscosity measurements exclude DNA intercalation and can be interpreted in terms of an electrostatic binding between the Fe(Salen) + cation and the phosphate groups of DNA. The trend of the UV–vis absorption band of the Fe(Salen)Cl complex at different ratios [DNA phosphate ]/[Fe(Salen)Cl] and the large increase of the melting temperature of DNA in …
Nd:YAG laser induced E′ centers probed by in situ absorption measurements
2005
We investigated various types of commercial silica irradiated with a pulsed Nd:YAG laser radiation (4.66 eV), with exposure time ranging up to 10000 s. Transient E' centers were probed in situ by measuring the amplitude of the optical absorption band at 5.8 eV (due to E' centers) both during and after irradiation. The laser-induced absorption is observed only in natural samples, whereas the synthetic materials exhibit high toughness to radiation effect. The reported results evidence that the kinetics of E' centers is influenced by their reaction with diffusing molecular hydrogen H2 made available by dimerization of radiolytic H0.
Bleaching of optical activity induced by UV Laser exposure in natural silica
2004
We report experimental data on two types of natural silica, differing for their OH content, irradiated with UV photons (4.66 eV) from a pulsed Nd:YAG laser. Irradiation induces a reduction of the absorption band at 5.12eV and of the associated emissions at 3.14eV and 4.28eV, ascribed to twofold coordinated Ge (=Ge'') centers pre-existing in our samples. The bleaching is mainly due to the post-irradiation conversion of =Ge'' into the paramagnetic H(II) center via trapping of a H atom. Comparison with literature data points out the peculiarities of silica with a low Ge concentration as regards UV induced transformations.
Possible mechanism of energy storage in optically stimulable materials: doped alkali halides
1997
Radiation-induced effects in doped alkali halides, mainly in KBr:In, are studied by the luminescence technique. The activator luminescence during a 10 s under UV-light or electron irradiation and, after it, the pulsed photostimulated luminescence on a phosphorescence background were investigated. The obtained results allow us to conclude that the main host lattice excitation relevant to both the luminescence processes mentioned above is a very mobile excitonic excitation including a photon phase and the self- trapped exciton in its composition. The photon phase, as we suppose, represents a free exciton luminescence at room temperature. In this phase, via multiple reabsorption in the low-ene…
Raman investigation of single oxidized carbon nanotubes
2001
The oxidation process of single-walled carbon nanotubes via nitric acid treatment was followed by IR-, UV-Vis-NIR, and single bundle Raman spectroscopy. The introduction of functional, oxygen-containing groups is revealed by an additional absorption band at 1725 cm−1, characteristic of carbonyl stretch vibrations. No significant shift of the optical absorption bands could be detected after oxidation. The combination of atomic force microscopy and confocal scanning resonance-enhanced Raman microscopy was used to investigate thin bundles and, eventually, individual nanotubes in detail. These experiments enabled determination of the dependence of the Raman intensity of the G-line (around 1590 …
X‐irradiation induced photo‐ and thermostimulated luminescence of CsCdF 3 :Mn crystals
2005
Photo- and thermostimulated luminescence (PSL and TSL respectively) of previously X-irradiated CsCdF3 crystal doped with Mn were investigated. After X-irradiation of CsCdF3 crystal at 8 K PSL bands at about 300 nm and 550 nm appear. Several stimulation bands can be revealed for luminescence at 300 nm and 550 nm. The stimulation band at 340 nm is related to an F-type centre absorption band in accordance with the Mollwo-Ivey relation for halide crystals. Subsequent heating of the crystal after X-irradiation at 8 K shows TSL peaks in the temperature regions 8 K – 90 K and 200 K – 300 K. The spectral composition of the TSL involves both bands at 300 nm and 550 nm. Experiments performed allow us…
Radiation defects in undoped and Nd‐doped LaGaO 3 crystals
2005
Radiation induced defects have been studied in undoped and Nd-doped (6 mol% and 12 mol%) LaGaO3 crystals. Wide absorption band (2.2–2.8 eV) was observed after crystal irradiation with X-rays at 300 K. Induced defects have been annealed in air at ∼450 K. Similar absorption band was observed in transient absorption spectra after ns-pulsed electron beam excitation. The radiation defect creation efficiency is higher in undoped LaGaO3 crystal. It is shown that small concentration of Nd-doping increases the LaGaO3 crystal radiation hardness. In transient absorption spectra along with 2.7 eV band the absorption bands at 1.5 eV and 2.2 eV were observed. The decay process of transient absorption has…
Photostimulated emission of KBr—In previously exposed to UV- or X-radiation
1995
Abstract We have performed a photostimulated luminescence (PSL) study of a KBr—In crystal previously irradiated in the exciton fundamental absorption band. It is shown that the PSL arises from three types of close defect pair. It is also shown that one of these three kinds of defect pairs is {F, In2+}, whereas the electron centre of the two other pairs has a more complex nature.
Photostimulated processes in the CsI-Tl crystal after UV irradiation
1997
The photostimulated luminescence is studied for CsI-Tl crystal after irradiation with ultraviolet light in the 80 - 300 K temperature range. The PSL creation spectrum coincides with the D absorption band at 80 K. Three bands are observed in the stimulation spectra at 80 K: 1400, 950, and 600 nm. The 1400 and 950 nm stimulation bands are presumably explained as optical transitions in the Tl 0 and V k centers situated in the spatial correlated pairs. The stimulation at 600 nm band is ascribed to the unperturbed Tl 0 centers.