Search results for "Absorption edge"
showing 5 items of 95 documents
X-ray-absorption study of rheniumL3andL1edges inReO3: Multiple-scattering approach
1993
We present ab initio calculations of x-ray-absorption fine structure for the Re L 3 and L 1 edges in crystalline ReO 3 based on an exact curved-wave multiple-scattering approach. Good agreement between theoretical and experimental data has been found for both edges. We show that, as expected, the contribution of multiple-scattering signals from linear chains, like Re-O-Re and O-Re-O, is very large both in the L 3 - and L 1 -edge spectra due to the strong focusing effect caused by the middle atom
Optical Absorption of Zinc Selenide Doped with Cobalt (Zn1-xCoxSe) under Hydrostatic Pressure
2000
Optical absorption of the diluted magnetic semiconductor Zn 1-x Co x Se (x = 0.02) has been measured at room temperature under hydrostatic pressure up to 14 GPa in a membrane diamond-anvil cell. We found two absorption features: (i) an absorption structure in the energy range 1.5 to 1.8 eV, with a negligible pressure shift (i.e. (0.45 ± 0.05) meV/GPa) which we have identified as the Co 2+ (3d 7 ) internal transition 4 A 2 (F) → 4 T 1 (P) and (ii) an onset in the energy range 2 to 2.7 eV which redshifts with pressure (dE/dP = (-8.1 ± 0.6) meV/GPa). We have attributed such absorption edge to charge transfer between the ZnSe valence band and the Co 2+ (3d 7 ) levels. On the assumption that tho…
Optical absorption of zinc selenide doped with cobalt (Zn1−xCoxSe) under hydrostatic pressure
2000
Abstract The optical absorption of the diluted magnetic semiconductor Zn1−xCOxSe (x = 0.02) has been measured at room temperature under hydrostatic pressure up to 14GPa in a membrane diamond-anvil cell. We found two absorption features: (i) an absorption structure in the energy range 1.6−1.8eV, with a negligible pressure shift (i.e., 0.45 ± 0.05 meV/GPa) which we have identified as the Co2+(3d7) internal transition 4A2(F)→+4T1(P) and (ii) an onset in the energy range 2−2.7eV which redshifts with pressure (−8.1±0.6meV/GPa). We have attributed such absorption edge to charge transfer between the ZnSe valence band and the Co2+(3d7) levels.
X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC.
2009
By means of x-ray absorption near-edge structure (XANES) several Ga(1-x)Mn(x)N (0.03x0.09) layers have been analyzed. The Mn-doped GaN samples consisted of different epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien…
Spectral analysis of the dipping LMXB system XB 1916-053
2019
Context: XB 1916-053 is a low mass X-ray binary system (LMXB) hosting a neutron star (NS) and showing periodic dips. The spectrum of the persistent emission was modeled with a blackbody component having a temperature between 1.31 and 1.67 keV and with a Comptonization component with an electron temperature of 9.4 keV and a photon index $\Gamma$ between 2.5 and 2.9. The presence of absorption features associated with highly ionized elements suggested the presence of partially ionized plasma in the system. Aims: In this work we performed a study of the spectrum of XB 1916-053, which aims to shed light on the nature of the seed photons that contribute to the Comptonization component. Methods: …