Search results for "Absorption"
showing 10 items of 2701 documents
Portable low-cost open-source wireless spectrophotometer for fast and reliable measurements
2020
This article is based upon COST Action CA16215 and supported by the ERDF , European-Union Project No.1.1.1.2/16/I/001.
Nd:YAG laser induced E′ centers probed by in situ absorption measurements
2005
We investigated various types of commercial silica irradiated with a pulsed Nd:YAG laser radiation (4.66 eV), with exposure time ranging up to 10000 s. Transient E' centers were probed in situ by measuring the amplitude of the optical absorption band at 5.8 eV (due to E' centers) both during and after irradiation. The laser-induced absorption is observed only in natural samples, whereas the synthetic materials exhibit high toughness to radiation effect. The reported results evidence that the kinetics of E' centers is influenced by their reaction with diffusing molecular hydrogen H2 made available by dimerization of radiolytic H0.
Stability of E' centers induced by 4.7eV laser radiation in SiO2
2007
The kinetics of E' centers (silicon dangling bonds) induced by 4.7eV pulsed laser irradiation in dry fused silica was investigated by in situ optical absorption spectroscopy. The stability of the defects, conditioned by reaction with mobile hydrogen of radiolytic origin, is discussed and compared to results of similar experiments performed on wet fused silica. A portion of E' and hydrogen are most likely generated by laser-induced breaking of Si-H precursors, while an additional fraction of the paramagnetic centers arise from another formation mechanism. Both typologies of E' participate to the reaction with H_2 leading to the post-irradiation decay of the defects. This annealing process is…
Bleaching of optical activity induced by UV Laser exposure in natural silica
2004
We report experimental data on two types of natural silica, differing for their OH content, irradiated with UV photons (4.66 eV) from a pulsed Nd:YAG laser. Irradiation induces a reduction of the absorption band at 5.12eV and of the associated emissions at 3.14eV and 4.28eV, ascribed to twofold coordinated Ge (=Ge'') centers pre-existing in our samples. The bleaching is mainly due to the post-irradiation conversion of =Ge'' into the paramagnetic H(II) center via trapping of a H atom. Comparison with literature data points out the peculiarities of silica with a low Ge concentration as regards UV induced transformations.
Peculiarities of the local structure in new medium- and high-entropy, low-symmetry tungstates
2022
G. Bakradze acknowledges financial support provided by the Latvian Council of Science for project no. 1.1.1.2/VIAA/3/19/444 (agreement no. 1.1.1.2/16/I/001) realized at the Institute of Solid State Physics, University of Latvia. The Institute of Solid State Physics, University of Latvia, as a centre of excellence, has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement no. 739508, project CAMART2.
Spectroscopic parameters related to non bridging oxygen hole centers in amorphous-SiO2
2005
The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV were investigated in a wide variety of synthetic silica samples exposed to different gamma- and beta-ray irradiation doses. We found that the intensities of these optical bands are linearly correlated in agreement with the model in which they are assigned to a single defect. This finding allows to determine spectroscopic parameters related to optical transitions efficiency: the oscillator strength of the 4.8 eV results ~200 times higher than that of the 2.0 eV; the 1.9 eV luminescence quantum yield under 4.8 eV excitation is lower (by a factor ~3) than that under 2.0 eV excitation. These res…
Chemical-state analyses of Ni, Zn, and W ions in NiWO$_4$-ZnWO$_4$ solid solutions by X-ray photoelectron spectroscopy
2022
The chemical states of Ni, Zn, and W in microcrystalline NiWO$_4$-ZnWO$_4$ solid solutions were studied by X-ray photoelectron spectroscopy. The recorded spectra of the Ni 2p, Zn 2p, and W 4f photoelectron lines and Ni L$_2$M$_{23}$M$_{45}$, Zn L$_3$M$_{45}$M$_{45}$, and W N$_4$N$_{67}$N$_{7}$ Auger-transition lines show pronounced changes with increasing Zn concentration. The positions of the resolved photoelectron and Auger-transition lines were combined to construct so-called chemical-state plots (Wagner or Auger-parameter plots) for metal ions in solid solutions. With increasing Zn concentration, the Auger parameter increases for Ni and decreases for W, thus evidencing a lowering and an…
Revealing the importance of interfaces for pure spin current transport
2021
Spin transport phenomena underpin an extensive range of spintronic effects. In particular spin transport across interfaces occurs in most device concepts, but is so far poorly understood. As interface properties strongly impact spin transport, one needs to characterize and correlate them to the fabrication method. Here we investigate pure spin current transport across interfaces and connect this with imaging of the interfaces. We study the detection of pure spin currents via the inverse spin Hall effect in Pt and the related spin current absorption by Pt in Py-Cu-Pt lateral spin valves. Depending on the fabrication process, we either find a large (inverse) spin Hall effect signal and low sp…
Evidence of delocalized excitons in amorphous solids
2010
We studied the temperature dependence of the absorption coefficient of amorphous ${\mathrm{SiO}}_{2}$ in the range from 8 to 17.5 eV obtained by Kramers-Kronig dispersion analysis of reflectivity spectra. We demonstrate the main excitonic resonance at 10.4 eV to feature a close Lorentzian shape redshifting with increasing temperature. This provides a strong evidence of excitons being delocalized notwithstanding the structural disorder intrinsic to amorphous ${\mathrm{SiO}}_{2}$. Excitons turn out to be coupled to an average phonon mode of 83 meV energy.
Optical absorption induced by UV laser radiation in Ge-doped amorphous silica probed by in situ spectroscopy
2007
We studied the optical absorption induced by 4.7eV pulsed laser radiation on Ge-doped a-SiO2 synthesized by a sol-gel technique. The absorption spectra in the ultraviolet spectral range were measured during and after the end of irradiation with an in situ technique, evidencing the growth of an absorption signal whose profile is characterized by two main peaks near 4.5eV and 5.7eV and whose shape depends on time. Electron spin resonance measurements performed ex situ a few hours after the end of exposure permit to complete the information acquired by optical absorption by detection of the paramagnetic Ge(1) and Ge-E' centers laser-induced in the samples.