Search results for "Absorption"

A microeconometric analysis of the springboard subsidiary: The case of Spanish firms

2015

Abstract This paper provides a microeconometric analysis of the distinctive characteristics of springboard subsidiaries that have a positive impact on the subsidiaries’ performance. Based on panel data estimations for subsidiaries of European multinational companies with a presence in Spain, the authors found that if the subsidiary is located in the springboard country, then the performance improvement (increase in profit margin) of the subsidiary is about 49 percentage points. When the Spanish subsidiary is considered a springboard subsidiary, its performance is 7.7 percentage points higher than the performance of other subsidiaries that are not springboard subsidiaries. If the subsidiary …

Elastic scattering of 35Cl and 37Cl on 24Mg

1990

Abstract Elastic scattering of 35Cl and 37Cl on 24Mg was measured at two c.m. energies. Optical model analysis with different potentials are compared. Isotopics effects on absorption are observed. The closure approximation model is found to give a good reproduction of experimental data.

An advanced numerical treatment of EM absorption in human tissue

2020

The numerical computation of local electromagnetic absorption at points within the human tissue is proposed by avoiding the mesh generation in the problem domain. Recently, meshless numerical methods have been introduced as an alter- native computational approach to mesh based methods. This is an important feature to generate competitive procedure able to provide final evaluations for large data amounts in real time. In this paper the smoothed particle hydrodynamics method is considered to compute the electromagnetic absorption. First experiments are performed in two dimension at single frequencies by considering incident TM plane wave on 2D cylinder simulating a simplified model of human t…

Limits of validity of siegert’s theorem in the nuclear photoabsorption

1970

Van der Waals Interactions in a Magneto-Dielectric Medium

2007

The van der Waals interaction between two ground-state atoms is calculated for two electrically or magnetically polarizable particles embedded in a dispersive magneto-dielectric medium. Unlike previous calculations which infer the atom-atom interaction from the dilute-medium limit of the macroscopic, many-body van der Waals interaction, the interaction is calculated directly for the system of two atoms in a magneto-dielectric medium. Two approaches are presented, the first based on the quantized electromagnetic field in a dispersive medium without absorption and the second on Green functions that allow for absorption. We show that the correct van der Waals interactions are obtained regardle…

No short‐term effects of high‐frequency electromagnetic fields on the mammalian pineal gland

1997

There is ample experimental evidence that changes of earth-strength static magnetic fields, pulsed magnetic fields, or alternating electric fields (60 Hz) depress the nocturnally enhanced melatonin synthesis of the pineal gland of certain mammals. No data on the effects of high-frequency electromagnetic fields on melatonin synthesis is available. In the present study, exposure to 900 MHz electromagnetic fields [0.1 to 0.6 mW/cm2, approximately 0.06 to 0.36 W/kg specific absorption rate (SAR) in rats and 0.04 W/kg in Djungarian hamsters; both continuous and/or pulsed at 217 Hz, for 15 min to 6 h] at day or night had no notable short-term effect on pineal melatonin synthesis in male and femal…

High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN

2012

We report on high-pressure optical absorption measurements on InN epilayers with a range of free-electron concentrations (5×1017–1.6×1019 cm−3) to investigate the effect of free carriers on the pressure coefficient of the optical band gap of wurtzite InN. With increasing carrier concentration, we observe a decrease of the absolute value of the optical band gap pressure coefficient of wurtzite InN. An analysis of our data based on the k·p model allows us to obtain a pressure coefficient of 32 meV/GPa for the fundamental band gap of intrinsic wurtzite InN. Optical absorption measurements on a 5.7-μm-thick InN epilayer at pressures above the wurtzite-to-rocksalt transition have allowed us to o…

Tuning the semiconducting nature of bis(phthalocyaninato) holmium complexes via peripheral substituents

2012

The semiconducting properties of the heteroleptic and homoleptic bis(phthalocyaninato) holmium complexes bearing electron-withdrawing phenoxy substituents at the phthalocyanine periphery, namely Ho(Pc)[Pc(OPh)8] (1) and Ho[Pc(OPh)8]2 (2) [Pc = unsubstituted phthalocyaninate; Pc(OPh)8 = 2,3,9,10,16,17,23,24-octaphenoxyphthalocyaninate] have been investigated comparatively. Using a solution-based Quasi–Langmuir–Shafer (QLS) method, the thin solid films of the two compounds were fabricated. The structure and properties of the thin films were investigated by UV-vis absorption spectra, X-ray diffraction (XRD) and atomic force microscopy (AFM). Experimental results indicated that H-type molecular…

Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor

2021

Delafossite CuFeO2 is a p-type oxide semiconductor with a band gap of ∼1.5 eV, which has attracted great interests for applications in solar energy harvesting and oxide electronics. However, there are still some discrepancies in the literature regarding its fundamental electronic structure and transport properties. In this paper, we use a synergistic combination of resonant photoemission spectroscopy and X-ray absorption spectroscopy to directly study the electronic structure of well-defined CuFeO2 epitaxial thin films. Our detailed study reveals that CuFeO2 has an indirect and d-d forbidden band gap of 1.5 eV. The top of the valence band (VB) of CuFeO2 mainly consists of occupied Fe 3d sta…

Cathodoluminescence study of undoped GaN films: Experiment and calculation

2009

Abstract In this paper, we report the theoretical and experimental results of cathodoluminescence (CL) from GaN layers grown at 800 °C by metal organic vapor phase epitaxy (MOVPE) on silicon substrate. The CL spectra recorded at room temperature reveal the near band-edge emission at 3.35–3.42 eV and a broad yellow luminescence at 2.2 eV. The CL depth analysis at constant power excitation shows inhomogeneous CL distribution in depth of these emissions as the electron beam increases from 3 to 25 keV. There appears a blue shift of the CL band-edge peaks with increasing sample depth. This behavior is explained by a change of the fundamental band gap due to residual strain and the local temperat…