Search results for "Aluminium"
showing 10 items of 548 documents
Oxidation-driven changes of the in-plane magnetic surface anisotropies of the Fe(110)/Al interface
2003
Abstract Thin epitaxial iron films grown on W(1 1 0) were covered by ultrathin epitaxial aluminium layers of varying thicknesses from 0.2 to 0.6 nm and subsequently naturally oxidized in situ with oxygen exposures up to 150 L. Correlations between the oxidation states of the Al covers and changes of the in-plane magnetic anisotropies at the Fe(1 1 0)/Al interface were discussed on the basis of results from X-ray photoelectron spectroscopy and longitudinal magneto-optical Kerr magnetometry measurements. The Al coverage decreases the second-order in-plane surface anisotropy of the Fe(1 1 0) surface. Whereas for the thinnest Al covers, the second-order in-plane magnetic surface anisotropy decr…
Co-precipitation synthesis of Nd:YAG nano-powders: the effect of Nd dopant addition with thermal treatment
2007
Nanopowders of Yttrium Aluminium Garnet doped with neodymium ions were obtained by the co-precipitation method from the reaction of aluminium, yttrium and neodymium nitrate with ammonia. The amount of neodymium was selected in order to produce samples of nominal stoichiometry NdXY (3-X)Al5O12 (where X = 0.006, 0.012, 0.024, 0.048, 0.081, 0.096, 0.17, 0.19, 0.38, 0.54, and 0.72, respectively). After washing and drying, the hydroxide precursors were subjected to Thermo-Gravimetry and Differential Thermal Analysis experiments from room temperature up to 1500 °C, which showed the presence of exothermal events accompanying phase transformation phenomena. X-ray diffraction investigations conducte…
Effect of NiO and/or TiO2 mullite formation and microstructure from gels
1998
Polymeric and colloidal gels with a constant molar ratio of (Al+Ni and/or Ti)/Si=3/1 and various (Al/Ni and/or Ti) ratios (up to 21.42 mol% NiO+TiO2) were prepared and used to study the effect of the precursor chemical homogeneity on mullite formation processes and the resulting microstructure. Both kinds of gel precursors were preheated at 750°C for 3 h in order to obtain appropriate gel-derived glasses for further thermal processing. After annealing for several time periods at temperatures between 750 and 1500°C, differences in crystallization pathways were observed. Polymeric gels crystallized Al–Si and NiAl2O4 spinels from the amorphous form at temperatures in the range between 900 and …
Synthesis and characterisation of pack cemented aluminide coatings on metals
2004
Abstract The exposition of metallic materials to high temperature environments leads to their corrosion because of oxidation or sulphidation. One way to protect such materials is to produce an Al 2 O 3 layer which needs to be continuous enough to limit diffusion of oxygen or metallic elements, and withstand this corrosion. Since a few years, it has been proved that aluminide compounds are one of the most effective materials to achieve this goal. Indeed, they possess sufficient Al and many beneficial mechanical properties when exposed to high temperature conditions to make possible the formation of a protective Al 2 O 3 scale. This study is aimed at the elaboration of iron, nickel and molybd…
The F-type centres in YAG crystals
2001
The comparative study of optical properties of thermochemically reduced undoped YAG (Y3Al5O12) crystals is reported. A particular type of the centres often observed in YAG crystals synthesized as w...
Optically detected magnetic resonance studied via the blue luminescence of Ti-doped
1998
The UV-excited blue and green luminescence bands of Ti:sapphire are characterized by ODMR. These emission bands are attributed to two centres, which show very similar properties and are created as a result of a charge-transfer transition of an electron from to ions. In both centres, the d electron of and the hole of are strongly coupled and form triplet states. Doublet systems can be ruled out as sources of the blue-green luminescence. The angular dependence of the ODMR can be explained with an appropriate spin Hamiltonian assuming orthorhombic local symmetry. The orientation of the principal axes of the g-tensor and the crystal-field tensor, found for both centres, suggest that the hole is…
Influence of melt flow and temperature on erosion of refractory and deposit formation in aluminium melting furnaces
2002
The deposition and erosion mechanism in induction-channel furnace for Al melting in alumino-silicate refractory is considered. The possibility of simultaneous erosion and deposition in the same cross-section of the channel is shown. The chemical reaction model causing the erosion of refractory is proposed. The erosion process is described by chemically active aluminium oxides while the deposition is caused by chemically stable aluminium oxides. The variations of erosion and deposition in the same cross-section of the channel are explained by variation of the thickness of laminar sub-layer along the perimeter.
Reaktionen an Aluminiumoxiden. 5. Mitt.: Umsetzungen von Cyclohexanon an Aluminiumoxid
1974
Die Umsetzungen von Cyclohexanon (1) an verschiedenen Aluminiumoxiden wurden bei unterschiedlichen Bedingungen untersucht. Die dabei entstandenen Stoffe wurden durch Vergleichssubstanzen mit Hilfe der DC und GC nachgewiesen. Reactions on Aluminium Oxides The reactions of cyclohexanone (1) on various aluminium oxides were investigated under different conditions. The resulting products were identified using synthesized compounds by aid of TLC and GLC.
Properties of native ultrathin aluminium oxide tunnel barriers
2003
We have investigated planar metal–insulator–metal tunnel junctions with aluminium oxide as the dielectricum. These oxide barriers were grown on an aluminium electrode in pure oxygen at room temperature till saturation. By applying the Simmons model we derived discrete widths of the tunnelling barrier, separated by Δs ≈ 0.38 nm. This corresponds to the addition of single layers of oxygen atoms. The minimum thickness of s0 ≈ 0.54 nm is then due to a double layer of oxygen. We found a strong and systematic dependence of the barrier height on the barrier thickness. Breakdown fields up to 5 GV m−1 were reached. They decreased strongly with increasing barrier thickness. Electrical breakdown could…
Cu–Cu interactions in the transparent p-type conductors: CuAlO2 and SrCu2O2
2003
Abstract Electronic structures of the p-type Transparent Conducting Oxides (TCO): CuAlO2 and SrCu2O2 are calculated using the Tight Binding Linearized Muffin Tin Orbital within the Atomic Sphere Approximation method (TB-LMTO-ASA). The band structures indicate two gaps for CuAlO2 (an indirect one with ΔE≈0.45 eV and a direct one with ΔE≈1.25 eV) and one direct gap for SrCu2O2 (with ΔE≈2 eV). In both oxides the Cu states are dominant at the top of the valence band, close to the Fermi level and the existence of weak Cu–Cu bonding interactions is revealed through the Integrated Crystal Orbital Hamiltonian Population (ICOHP). The presence of such interactions suggests that for the hole doped oxi…