Search results for "Annealing"
showing 10 items of 434 documents
Role of the Microstructure on the High Temperature Oxidation Properties of the Intermetallic Compound NbAl<sub>3</sub>
2001
The influence of the NbAl 3 microstructure on its oxidation mechanism was investigated in air under atmospheric pressure over the temperature range 500-1080°C. Different processing techniques as induction melting and mechanically-activated annealing processes (M2AP) were used to produce the intermetallic compound NbAl 3 . A protective external alumina scale grew only on Al-enriched NbAl 3 between 700 and 1080°C. Stoichiometric NbAl 3 exhibited the pesting phenomenon between 550-900°C, whereas a non protective lamellar oxide scale formed above 900°C. The proposed oxidation mechanism explains these observations which are in agreement with the oxidation study of powders with different crystall…
Tritium sorption and desorption from JET beryllium tiles under temperature, electron radiation and magnetic field
2008
Abstract Tritium release at annealing of samples cut from beryllium tiles exposed to D + D, D + T plasma in the Joint European Torus (JET) was investigated under 5 MeV fast-electron radiation at the dose rate 14 MGy h −1 and in a magnetic field of 1.7 T separately and simultaneously in order to evaluate possible effects of these factors. Abundances of chemical forms of tritium—molecular T 2 (44%), atomic T 0 (42%), and ionic T + (14%) and their distribution were determined in the plasma-exposed beryllium samples with lyomethods. Fast-electron radiation considerably increased the fractional tritium release at annealing by a factor of approximately 5. The magnetic field increased the fraction…
Electrochemical Studies of Nonstoichiometric TiO<sub>2-x</sub> Ceramic
2014
TiO2 ceramic was prepared using extrusion technology and thermal treatment in two stages: sintering in air and subsequent annealing under high vacuum conditions. Sample thermal treatment in high vacuum conditions causes formation of nonstoichiometric titanium oxide ceramic. As a result electrical conductivity of the material significantly increases. Such a material can be used for electrode production for electrochemical water treatment.
Influence of the high energy ball milling on structure and reactivity of the Ni+Al powder mixture
2013
Abstract Investigation of the micro- and atomic structures for the planetary ball-milled Ni + Al mixtures has revealed existence of intermediate nano-crystalline and amorphous phases, which are not detectable by XRD analysis, but can be observed by means of HRTEM. Annealing of the milled mixtures at moderate temperature, 205–280 °C, transforms the nano-phases into crystal state and makes them XRD-detectable. These nano-scale structures may serve as nucleus for the intermetallic phases produced via reaction between Ni and Al and, therefore, decrease the activation energy of this reaction and diminish the temperature of the reaction initiation. Apparently, the active nano-phases are formed du…
Tritium release from breeding blanket materials in high magnetic field
2007
Abstract Under the operating conditions of a fusion reactor, the blanket materials: ceramic and Be pebbles will be at a high temperature (up to 1123 K), under action of intense radiation (up to 10 19 n m −2 s −1 ) and magnetic field (MF) up to 7–10 T. In order to introduce action of radiation and MF in post-irradiation investigations of the tritium release from the blanket materials, a special rig for thermo-annealing of pre-irradiated samples at a high temperature up to 1120 K under irradiation with fast electrons of 5 MeV and dose rate 14 MGy/h in MF up to 1.7 T was used for this study. A delay of the tritium release in MF of 2.4 T at thermo-annealing of the lithium orthosilicate Li 4 S…
Shape memory NiTi thin films deposited at low temperature
1999
Abstract NiTi shape memory alloy (SMA) thin films have the potential to become high performance actuators for micro-electromechanical systems. Low temperature crystallized NiTi films would ensure a good compatibility with microelectronic processes and polymers. To avoid the drawbacks induced by annealing, we have tried to obtain low temperature crystallized RF sputtered NiTi films by optimising deposition parameters. We have found that NiTi films containing an excess of Ti (∼52%) were crystallized when deposited on Si(100) substrates heated up to only 473 K. NiTi/Si(n) Schottky diodes I–V characteristics showed a temperature dependence indicating structural transition in the NiTi electrode.…
Photocatalytic printing of inorganic nanopatterns via poly(styrene-block-carbosilane) copolymer thin films on titania substrates.
2009
Well-defined, ordered arrays of nanoscale depressions were obtained in linear-brush-type polystyrene-block-polycarbosilane (PS-b-PCS) diblock copolymer thin films by acetone vapor annealing and silica nanodot arrays were directly obtained from such thin films deposited on a titania substrate by one-step exposure to UV light as a result of transformation of the PCS units to silica, driven by the photocatalytic activity of titania concurrent with removal of the organic matrix.
Highly textured Gd2Zr2O7 films grown on textured Ni-5at.%W substrates by solution deposition route: Growth, texture evolution, and microstructure dep…
2012
Abstract Growth, texture evolution and microstructure dependency of solution derived Gd 2 Zr 2 O 7 films deposited on textured Ni-5 at.%W substrates have been extensively studied. Influence of processing parameters, in particular annealing temperature and dwell time, as well as thickness effect on film texture and morphology are investigated in details. It is found that a rotated cube-on-cube epitaxy of Gd 2 Zr 2 O 7 //NiW in-plane texture forms as soon as the (004) out-plane texture appears, implying that epitaxial growth dominates the crystallization processes. Thermal energy plays an important role in minimizing the difference of interfacial energy along two directions in the anisotropic…
Low-temperature atomic layer deposition of ZnO thin films: Control of crystallinity and orientation
2011
Abstract Low-temperature atomic layer deposition (ALD) processes are intensely looked for to extend the usability of the technique to applications where sensitive substrates such as polymers or biological materials need to be coated by high-quality thin films. A preferred film orientation, on the other hand, is often required to enhance the desired film properties. Here we demonstrate that smooth, crystalline ZnO thin films can be deposited from diethylzinc and water by ALD even at room temperature. The depositions were carried out on Si(100) substrates in the temperature range from 23 to 140 °C. Highly c-axis-oriented films were realized at temperatures below ~ 80 °C. The film crystallinit…
CEMS Study of 57Fe Implanted in Diamond
2002
Conversion electron Mossbauer (CEMS) measurements have been made on a diamond sample implanted with 70 keV 57Fe to a dose of 5 × 1014 cm−2. CEMS spectra were collected in the as-implanted state and after annealing the diamond up to 1470 K. The lower temperature spectra were consistently fitted with three symmetric doublets. With annealing the areal fractions of two of the doublets increased to 44% and 48 %, respectively, while that of the third doublet decreased to be replaced by a single line component with isomer shift δ = 0.0 mm/s. Comparison of the observed isomer shifts with recent in-beam Mossbauer measurements and theoretical calculations allow us to attribute the singlet to intersti…