Search results for "Annealing"
showing 10 items of 434 documents
On the formation of lamellae during annealing of extended chain crystals of radiation-polymerized trioxane
1969
Abstract The structure changes of radiation-polymerized trioxane taking place during annealing have been studied by means of electron microscopy, X-ray small- and wide-angle scattering, and differential thermal analysis. The original fibrillar crystals, supposedly consisting of extended chains, change into lamellar crystals due to annealing at temperatures between 150° and 190°C. Lamella formation can be connected with the appearance of a long period of about 200A which is not observed in the unannealed sample. During annealing within the same temperature range the X-ray reflections due to the twin structure of the original polytrioxane disappear, whereas the orientation of the fraction wit…
Low-temperature positron-lifetime studies of proton-irradiated silicon
1990
The positron-lifetime technique has been used to identify defects created in high-purity single-crystal silicon by irradiation with 12-MeV protons at 15 K, and the evolution of the defects has been studied by subsequent annealings between 20 and 650 K. Two clear annealing steps were seen in the samples, the first starting at 100 K and the other at 400 K. The first is suggested to be a result of the migration of free, negatively charged monovacancies, and the second is connected to the annealing of some vacancy-impurity complexes, probably negatively charged vacancy-oxygen pairs. The specific trapping rate of positrons to both of these negatively charged monovacancy-type defects has been fou…
A Raman spectroscopy study of the oxidation processes in synthetic chromite FeCr2O4
2020
Abstract A crystal of synthetic chromite FeCr2O4 has been annealed in air at 700 °C for 50 days at room pressure in order to study physical-chemical changes. After the annealing treatment, Scanning Electron Microscopy (SEM) images of the polished surface of the sample showed areas of different composition. Detailed Raman mapping revealed that the annealed chromite undergoes an oxidation process, proceeding inwards from the outer surface and leading to the transformation of chromite to magnetite, and ultimately to hematite. The oxidation process also leads to the formation of trellis-like lines, arguably via stress-related mechanisms associated with the phase transformation and consequent vo…
Smart optically active VO2 nanostructured layers applied in roof-type ceramic tiles for energy efficiency
2016
Abstract The capability to control in an smart way the infrared reflectance to environmental temperature variations can be achieved with thermochromic materials like VO2. In this paper, we report the application of VO2 on ceramic tiles aiming to control the reflected infrared radiation on smart roofs and thus improving the energy efficiency, which is associated to the reduction of the carbon dioxide emissions. The VO2 nanoparticles have been produced by hydrothermal synthesis assisted by microwave irradiation, providing a new, quicker and cleaner production route. Afterwards, the VO2 nanoparticles were transferred to the surface of ceramic glassy tiles, which were prepared through dispersin…
Electronic Properties of Thermal Oxides on Ti and Their Influence on Impedance and Photoelectrochemical Behavior of TiO2 Nanotubes
2017
Thermal oxidation of titaniumwas carried out at 350◦C, 450◦C, and 550◦C for 2 h or 12 h.X-rayDiffraction and Raman Spectroscopy suggest that the thermal oxides are scarcely crystallinewhen the annealing temperature is low, while both anatase and rutile are present for high annealing temperature and time. Photoelectrochemical measurements allowed estimation of a bandgap decreasing from 3.35 eV to 3.15 eV with increasing annealing temperature. The impedance spectra confirmed the formation of n-type semiconductors, with an impedance strongly decreasing on going from a reverse bias toward a forward bias regime. TiO2 nanotubes grown by anodizing Ti in NH4F and water containing ethylene glycol so…
Synthesis of niobium aluminides using mechanically activated self-propagating high-temperature synthesis and mechanically activated annealing process
1999
The mechanically activated self-propagating high-temperature synthesis (MASHS) technique and the mechanically activated annealing process (M2AP) were used to produce NbAl3 intermetallic compound. The MASHS process results from the combination of two steps: first, a mechanical activation of the Nb 3Al powders mixture; second, a self-propagating high-temperature synthesis (SHS). The M2AP process also results from the combination of two steps: the first is the same; the second consists of the annealing of as-milled powders. Based on X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM) and X-ray energy dispersive spectroscopy (EDXS), the as-milled powders, MASHS, and M2AP end-pr…
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
2019
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950 degrees C form Ohmic contacts on moderately n-type doped 3C-SiC (N-D similar to 1 x 10(17) cm(-3)), with a specific contact resistance of 3.7 x 10(-3) Omega cm(2). The main phase formed upon annealing in this contact was nickel silicide (Ni2Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (N-A similar …
Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing
2002
Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. © 2002 The Electrochem…
Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide
2001
Metal-oxide-semiconductor capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers are presented and investigated by transmission electron microscopy and electrical measurements. The grain size distribution and the amount of crystallized silicon remaining in SRO after annealing have been studied by transmission electron microscopy, whereas the charge trapping and the charge transport through the dots in the SRO layer have been extensively investigated by electrical measurements. Furthermore, a model, which explains the electrical behavior of such SRO capacitors, is presented and discussed. © 2001 American Institute of …
Preparation of Heusler thin films: The quaternary alloy CO2Fe0.5Mn0.5Si
2008
In this work the basic strategies for the preparation of CO2Mn0.5Fe0.5Si as an example for Heusler alloy thin films will be described. Texture and magnetic properties of these films will be discussed, especially with regard to different buffer layers and annealing temperatures. Finally, we will show the integration of Heusler thin films into magnetic tunnel junctions (MTJs) and calculate the effective spin polarization. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim