Search results for "Annealing"
showing 10 items of 434 documents
Annealing of Radiation Defects in X-Irradiated LiBaF3
2002
AbstractResults of application of the glow rate technique GRT for analysis of the activation energy of thermostimulated annealing of X-ray created F-type color centers in LiBaF3 crystals, pure and containing hetero-valence oxygen centers are presented. It is shown that depending on impurity composition in crystal two alternative mechanisms are involved in annealing of color centers. It is proposed that either the anion vacancy governed migration of F- centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine (Fi) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F- type …
Kinetics of correlated annealing of radiation defects in alkali halide crystals
1992
Abstract Kinetics of the correlated annealing of pairs of neutral (F-H) Frenkel defects in the KBr crystal is treated theoretically, taking into account defect diffusion, and annihilation at short distances stimulated by an elastic interaction. It is shown that an elastic interaction affects the annealing kinetics and the survival probability of close geminate detects considerably. The widespread description of the correlated annealing in terms of a first-order reaction fails for close defects yielding effective energies which in fact differ essentially from an activation energy of diffusion. Ea, even if it is corrected by an interaction energy. The effect of the initial distribution of def…
Hardening and formation of dislocation structures in LiF crystals irradiated with MeV–GeV ions
2002
Abstract Material modifications of LiF crystals irradiated with Au, Pb and Bi ions of MeV to GeV energy are studied by means of microindentation measurements and dislocation etching. Above a critical irradiation fluence of 10 9 ions/cm 2 , the microhardness can improve by a factor of 2 in the bulk and by more than 3 on the surface. Radiation-induced hardening follows the evolution of the energy loss along the ion path. Annealing experiments indicate that complex defect aggregates created in the tracks play a major role for the hardness change. Evidence for severe structural modifications is found when etching indentation impressions in highly irradiated crystals leading to similar pattern a…
High-Fluence Implantation of Erbium into Silicon-Germanium Alloys: Structural and Thermal Properties
2000
AbstractHigh-quality crystalline Si1-xGex (x=0.10 and 0.25) alloys were implanted with 70 keV Er+ ions at temperatures of 350°C and 550°C to a fluence of 1015 cm−2. In-situ Rutherford backscattering/channeling (RBS) analysis supplemented with transmission electron microscopy (TEM) showed that as-implanted alloys were in form of ternary solid solutions with a peak Er concentration of 1 at.% without any trace of Er-Si or Er-Ge precipitation.In the samples implanted at 350°C Er atoms were found to be distributed randomly in the amorphous host matrix. Post-implantation annealing at different temperatures up to 600° showed that the solid phase epitaxial regrowth of the damaged layers strongly de…
Grazing-Incidence X-ray Diffraction Study of Octadecanoic Acid Monolayers
1998
We report the observation of X-ray scattering profiles from monolayers of octadecanoic acid in the vicinity of room temperature and evidence for the existence near room temperature of all four hexatic rotator phases L2d, Ov, L‘1, and LS, which differ in the details of their molecular tilt. While the incontrovertible triple-reflection signature of the chiral L‘1 phase was not observed, we propose that the previously reported rapid annealing behavior in this phase can lead to the disappearance of one, and in some cases two, of the three peaks.
Magnetic alignment of aliphatic lamellae
1993
Abstract Magnetic alignment of mesophases is normally only considered possible when the molecule contains an aromatic ring system. In this paper we report on the mesomorphous behaviour of a polyalkylacrylate resin with average sidechain length 22 and the alignment of its lamellae in cast films by annealing in a strong magnetic field.
Hardening in LiF induced by fast Ni ions and recovery of properties under annealing
2005
The recovery of hardness and optical absorbance of LiF crystals irradiated with 640 MeV nickel ions under annealing at 450–810 K is investigated. Recovery of the hardness of irradiated crystals is initiated at temperatures above 530 K, at which a transition from a complex absorption spectrum to a spectrum with only one broad peak at 275 nm is observed. Activation energy of 0.13 eV ± 0.02 eV, which is close to that necessary for migration of H centers, is obtained from the annealing data. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Computer Simulations of I-Center Annealing in KCl and KBr Crystals. Theoretical Interpretation of Thermostimulated Experiments
1995
Results of computer simulations of the kinetics of correlated annealing of pairs of close α–I and F–I centers in KCI and KBr crystals, enhanced by I-center diffusion and Coulomb or elastic attractions, respectively, are presented. Special attention is paid to the conditions under which multi-stage annealing stages arise as it has been observed experimentally more than once. Our general conclusions are: (i) a weak elastic interaction affects the recombination kinetics and the survival probability even for relatively well-separated F–I pairs, the more so is true for the case of Coulomb attraction between charged α–I pairs; (ii) the multi-step (kink) structure arises only for close (typically,…
Grain-size-induced relaxor properties in nanocrystalline perovskite films
2004
Thin films of ${\mathrm{Pb}}_{0.76}{\mathrm{Ca}}_{0.24}{\mathrm{TiO}}_{3}$ (PTC), which is a classical ferroelectric as a bulk material and of the relaxor material $\mathrm{Pb}({\mathrm{Sc}}_{0.5}{\mathrm{Nb}}_{0.5}){\mathrm{O}}_{3}$, have been produced to find out whether nanocrystalline ferroelectric films show a grain-size-induced relaxor behavior. Amorphous films were deposited onto a $\mathrm{Ti}∕\mathrm{Pt}$ coated silicon (100) wafer by reactive $\text{rf}$ sputtering. Different grain sizes were prepared by a controlled annealing process and they were determined by profile analysis of x-ray diffraction spectra. Temperature dependent Raman spectroscopy was used to look for phase trans…
Quantification of low levels of amorphous content in sucrose by hyperDSC.
2005
A method was developed for the quantification of low levels of amorphous content in sucrose with hyperDSC. The method was based on the fact that the change of specific heat at the glass transition is linearly proportional to the amorphous content. It was found out that as annealing time increased, the glass transition temperature moved to a higher temperature and the change of specific heat increased. DeltaC(p) for annealed totally amorphous sucrose was 0.761+/-0.012 Jg(-1) degrees C(-1). Synthetic mixtures with various proportions of crystalline and amorphous sucrose were prepared. The following linear regression between DeltaC(p) and amorphous content was obtained: DeltaC(p)=0.0075x - 0.0…