Search results for "Anodic Film"
showing 10 items of 25 documents
The effect of thickness on the composition of passive films on a Ti–50Zr at% alloy
2006
Abstract Anodic films were grown potentiodynamically in different electrolytes (pH = 1–14) on a Ti–50Zr at% cast alloy, obtained by fusion in a voltaic arc under argon atmosphere. The thickness of the films was varied by changing formation potential from the open circuit potential up to about 9 V; growth was followed by 30 min stabilization at the forming potential. Films having different thicknesses were characterized by photocurrent spectroscopy (PCS) and electrochemical impedance spectroscopy (EIS). Moreover, film composition was analyzed by X-ray photoelectron spectroscopy (XPS). Regardless of the anodizing conditions, passive films on the Ti–50Zr at% alloy consist of a single layer mix…
Photoelectrochemical characterization of amorphous anodic films on Ti-6at.%Si
2013
Abstract The solid state properties of anodic films grown galvanostatically on sputtering-deposited Ti–6at.%Si alloys were studied as a function of the formation voltage (5–40 V). From the photocurrent spectra a band gap of ∼3.4 eV was estimated for all the investigated thicknesses, which is almost coincident with the value measured for amorphous TiO 2 . The photocharacteristics allowed to estimate the flat band potential of the films, which resulted to be more anodic for thicker layers and allowed to evidence a change from n-type semiconducting material to insulator by increasing the formation voltage. A dielectric constant of ∼31 was estimated by differential capacitance measurements. The…
Photocurrent Spectroscopy Applied to the Characterization of Passive Films on Sputter-Deposited Ti-Zr Alloys
2008
Abstract A photoelectrochemical investigation on thin (⩽13 nm) mixed oxides grown on sputter-deposited Ti–Zr alloys of different composition by air exposure and by anodizing (formation voltage, UF = 4 V/SCE) was carried out. The experimental results showed that the optical band gap, E g opt , increases with increasing Zr content in both air formed and anodic films. Such behaviour is in agreement with the theoretical expectation based on the correlation between the band gap values of oxides and the difference of electronegativity of their constituents. The flat band potential of the mixed oxides was found to be almost independent on the Ti/Zr ratio into the film and more anodic with respect …
Structural and Photoelectrochemical Characterization of Porous Anodic Films on Iron
2012
Photoelectrochemical Characterization of Porous Anodic Films on Iron Grown in Fluoride-containing Ethylebe Glycol Electrolyte
2012
Tuning of the optical and dielectric properties of anodic film on sputtered deposited Ta-Nb alloys
2011
Effect of Incorporation of Foreign Species on the Solid State Properties of Anodic Films on Ti
2014
Photo-Electrochemical deposition of Poly-3,4 Ethylenedioxythiophene on Anodic Films on Ti-Si Alloys.
2013
Photoelectrochemical evidence of inhomogeneous composition at nm length scale of anodic films on valve metals alloys
2015
Anodic films of different thickness (∼30 nm and 70 nm) were grown by anodizing sputtering-deposited Ta-19at% Al to different formation voltages. N incorporation into the anodic films was inducing by performing the anodizing process in ammonium containing solutions. Layered anodic films were prepared by a double formation procedure with a first anodizing step in ammonium biborate solution and second anodizing step in borate buffer solution, or vice versa. Glow Discharge Optical Emission Spectroscopy was employed to show the distribution of N across the oxide. Photoelectrochemical measurements evidenced a red shift of the light absorption threshold due to N incorporation. A model was proposed…