Search results for "Applied physics"

Dielectric behaviour of BaTi1-xZrxO3ceramics obtained by means of a solid state and mechanochemical synthesis

2016

ABSTRACTIn this study the comparison of dielectric behaviour of BaTi1-xZrxO3 (BTZx) ceramic samples prepared by means of a solid state and mechanochemical synthesis was presented. A single phase of perovskite structure was identified in the samples at room temperature. No significant impurities were detected in an EDS spectrum and the samples had a good stoichiometric ratio. The morphology of the investigated samples was characterized by a scanning electron microscopy (SEM). The investigation of dielectric properties of the BTZx samples within the temperature range from 140 K to 600 K was performed by means of a dielectric spectroscopy method at the frequency ranging from 0.1 Hz to 10 MHz. …

Effects of water removal on the structure and spin-crossover in an anilato-based compound

2021

The crucial role played by a crystallization water molecule in the spin crossover (SCO) temperature and its hysteresis is described and discussed in compound [NBu4][Fe(bpp)2][Cr(C6O4Br2)3]⋅2.5H2O (1), where bpp = 2,6-bis(pyrazol-3-yl)pyridine and (C6O4Br2)2− = dianion of the 3,6-dibromo-2,5-dihydroxy-1,4-benzoquinone. The compound has isolated [Fe(bpp)2]2+ cations surrounded by chiral [Cr(C6O4Br2)3]3− anions, NBu4+ cations, and a water molecule H-bonded to one of the non-coordinated N–H groups of one bpp ligand. This complex shows a gradual almost complete two-step spin transition centered at ca. 180 and 100 K with no hysteresis. The loss of the water molecules results in a phase transition…

Correlation between in situ structural and optical characterization of the semiconductor-to-metal phase transition of VO2 thin films on sapphire

2020

A detailed structural investigation of the semiconductor-to-metal transition (SMT) in vanadium dioxide thin films deposited on sapphire substrates by pulsed laser deposition was performed by in situ temperature-dependent X-ray diffraction (XRD) measurements. The structural results are correlated with those of infrared radiometry measurements in the SWIR (2.5-5 μm) and LWIR (8-10.6 μm) spectral ranges. The main results indicate a good agreement between XRD and optical analysis, therefore demonstrating that the structural transition from monoclinic to tetragonal phases is the dominating mechanism for controlling the global properties of the SMT transition. The picture that emerges is a SMT tr…

Phase transitions in Na0.5Bi0.5TiO3-(Sr0.7Bi0.2)TiO3-PbTiO3 solid solutions

2016

ABSTRACTIncreasing of Sr0.7Bi0.2TiO3 concentration in Na0.5Bi0.5TiO3-Sr0.7Bi0.2TiO3 solid solutions causes increasing of Bi/Na relation and vacancies in the A-site of perovskite structure. In temperature dependence of dielectric permittivity, such a change of composition is reflected by transforming of the frequency-dependent shoulder into a maximum characteristic for relaxor ferroelectrics and diminishing of the frequency-independent maximum characteristic for Na0.5Bi0.5TiO3. Here changes in behavior of dielectric permittivity and polarization are studied if PbTiO3 is added in a certain concentration range of Na0.5Bi0.5TiO3-Sr0.7Bi0.2TiO3 solid solutions. Changes of the characteristic temp…

Structural phase transition in [(C2H5)4N][(CH3)4N]ZnCl4

2019

The hybrid crystal [(C2H5)4N][(CH3)4N]ZnCl4 was studied using several experimental methods. DSC studies revealed the first order phase transition to the high temperature phase at about 496 K. This phase transition was confirmed in dielectric studies. Optical observation revealed the domain structure appearance characteristic for that of the phase transition between tetragonal and orthorhombic phases. This phase transition shows a lowering of symmetry as in the case of bromide analogs. Additionally, the optical studies showed the appearance of a number of cracks in the sample and in some cases, the samples became milky after cooling from the high temperature to the room temperature phase.

Dielectric properties of potassium–sodium niobate ceramics at low frequencies

2016

ABSTRACTA study of the effects of ageing history on the electrical properties of lead-free ferroelectric ceramics of (K0.5Na0.5)(Nb1−xSbx)O3 + 0.5 mol% MnO2 and (K0.5Na0.5)(Nb1−xTax)O3 + 0.5 mol%MnO2 for x = 0.05 is reported. The samples after storage at a constant temperature have been subject to infra-low-frequency electric field and radiation. Differences of the photoelectric response between the two examined compounds were found and the restoration of polarisation in the aged ceramic materials by cycles of applied field is discussed.

Luminescence dynamics of hybrid ZnO nanowire/CdSe quantum dot structures

2016

Colloidal CdSe quantum dots (QDs) functionalized with different organic linker molecules are attached to ZnO nanowires (NWs) to investigate the electron transfer dynamics between dots and wires. After linking the quantum dots to the nanowires, the photo-induced electron transfer (PET) from the QDs into the NWs becomes visible in the PL transients by a decrease of dot luminescence decay time. The different recombination paths inside the QDs and the PET process are discussed in the framework of a rate equation model. Photoconductivity studies confirm the electron transfer by demonstrating a strong enhancement of the wire photocurrent under light irradiation into the dot transition. (© 2016 WI…

Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental an…

2020

We report defect-related photoluminescence (PL) and its vacuum ultraviolet photoluminescence excitation (PLE) spectra of aluminum nitride layers with various layer thicknesses and dislocation densities grown on two different substrates: sapphire and silicon. The defect-related transitions have been distinguished and examined in the emission and excitation spectra investigated under synchrotron radiation. The broad PL bands of two defect levels in the AlN were detected at around 3 eV and 4 eV. In the PLE spectra of these bands, a sharp excitonic peak originating most probably from the A-exciton of AlN was clearly visible. Taking into account the exciton binding energy, the measurements allow…

Photoluminescence in Er-doped 0.4Na1/2Bi1/2TiO3-(0.6-x)SrTiO3-xPbTiO3 solid solutions

2020

Photoluminescence and optical second harmonic generation in Er-doped 0.4Na0.5Bi0.5TiO3-(0.6-x)SrTiO3-xPbTiO3 solid solutions is studied. Earlier, it was shown that upon increasing of PbTiO3 concent...

2021

Atomic layer deposition (ALD) technology has unlocked new ways of manipulating the growth of inorganic materials. The fine control at the atomic level allowed by ALD technology creates the perfect conditions for the inclusion of new cationic or anionic elements of the already-known materials. Consequently, novel material characteristics may arise with new functions for applications. This is especially relevant for inorganic luminescent materials where slight changes in the vicinity of the luminescent centers may originate new emission properties. Here, we studied the luminescent properties of CaS:Eu by introducing europium with oxygen ions by ALD, resulting in a novel CaS:EuO thin film. We …