Search results for "Atm"
showing 10 items of 24032 documents
MOCVD growth of CdO very thin films: Problems and ways of solution
2016
Abstract In this paper the growth of CdO by the MOCVD technique at atmospheric pressure has been studied in order to achieve very thin films of this material on r-sapphire substrates. The growth evolution of these films was discussed and the existence of a threshold thickness, below which island-shaped structures appear, was demonstrated. Some alternatives to reduce this threshold thickness have been proposed in the frame of the analysis of the crystal growth process. The morphology and structural properties of the films were analyzed by means of SEM and HRXRD. High-quality flat CdO samples were achieved with thicknesses up to 20 nm, which is five times thinner than the values previously re…
Temperature Coefficients of Crystal Defects in Multicrystalline Silicon Wafers
2020
This article investigates the influence of crystallographic defects on the temperature sensitivity of multicrystalline silicon wafers. The thermal characteristics of the implied open-circuit voltage is assessed since it determines most of the total temperature sensitivity of the material. Spatially resolved temperature-dependent analysis is performed on wafers from various brick positions; intragrain regions, grain boundaries, and dislocation clusters are examined. The crystal regions are studied before and after subjecting the wafers to phosphorus gettering, aiming to alter the metallic impurity concentration in various regions across the wafers. Most intragrain regions and grain boundarie…
Anomalies of dielectric properties and conductivity in single domain LiNbO3:Zn crystals
2016
ABSTRACTA study of the temperature dependence of dielectric constant, conductivity, and piezoelectric modulus in the single-domain state of LiNbO3 crystals modified by Zn admixture at threshold concentration is reported. Unipolarity of the LiNbO3:Zn crystals is observed to increase after treatment of brand-new samples by high-temperature electro-diffusion annealing and by subsequent high-temperature annealing of short-circuited samples. The observed effects are explained as a result of meta-stable residual domains collapsing at high temperature the collapse being assisted by disintegration of charged clusters stabilizing domain walls. The rise of unipolarity is accompanied by anomalies on t…
Isothermal relaxation of discommensurations in K2ZnCl4
1994
At the incommensurate-ferroelectric transition temperature T c of K 2 ZnCl 4 , the dielectric susceptibility contains an anomalous contribution both above and below T c . Previous quasi-static dielectric measurements and hysteresis loops demonstrated that this anomalous part arises from the peculiar dynamics of discommensurations. We have used isothermal dielectric measurements to get some insight into the long time dynamics of these discommensurations. We have found that the characteristic relaxation times τ are of the order of 10 4 s in the incommensurate and in the ferroelectric phase. Even more unusual is a non-monotonous relaxation which is observed in a restricted temperature range ab…
High temperature oxidation of Mg2(Si-Sn)
2016
Abstract High temperature oxidation of Mg 2 Si 1- x Sn x alloys ( x = 0.1 ⿿ 0.6) has been investigated. The oxidation rate was slow for temperatures below 430 °C. In the temperature range between 430⿿500 °C all the alloys exhibited breakaway oxidation. The onset temperature of the breakaway region in general decreased with increasing level of Sn in the alloy. The breakaway behavior is explained by a combination of the formation of a non-protective MgO layer and the formation of Sn-rich liquid at the interface between the oxide and Mg depleted Mg 2 Sn.
Zn-substituted iron oxide nanoparticles from thermal decomposition and their thermally treated derivatives for magnetic solid-phase extraction
2020
Abstract Controlled thermal decomposition of zinc and iron acetylacetonates in the presence of oleic acid and oleylamine provided surfactant-capped magnetic nanoparticles with narrow size distribution and the mean diameter of ≈15 nm. The combined study by XRD, XRF and Mossbauer spectroscopy revealed three important features of the as-prepared nanoparticles. First, the actual ratio of Zn:Fe was considerably lower in the product compared to the initial ratio of metal precursors (0.14 vs. 0.50). Second, a pure stoichiometric Zn-doped magnetite system, specifically of the composition Zn0.37Fe2.63O4, with no signatures of oxidation to maghemite was formed. Third, Zn2+ ions were distributed at bo…
Properties of Nanosized Ferrite Powders and Sintered Materials Prepared by the Co-Precipitation Technology, Combined with the Spray-Drying Method
2016
Cobalt and nickel ferrites powders are synthesized by the co-precipitation technology, combined with the spray-drying method. The crystallite size, specific surface area (SSA), magnetic properties of synthesized products are investigated. All the synthesized ferrites are nanocrystalline single phase materials with crystallite size of 5-6 nm, the SSA of 80-85 m2/g and the calculated particle size of 13-15 nm. After spray-drying granules of the size up to 10 μm are obtained. After thermal treatment at 550 and 950 °C SSA decreases to 40-50 m2/g and 20-22 m2/g, respectively. The saturation magnetization at these temperatures increase from 17 to 40 emu/g for NiFe2O4 and from 51 to 77 emu/g for C…
Structural, microstructural and dielectric studies in multiferroic LaSrNiO4-δ prepared by mechanical milling method
2016
Abstract The solid solution LaSrNiO 4-δ has been successfully prepared by a rapid method combining mechanical milling and heat treatment. The structure and microstructure transformations were characterized by X-ray powder diffraction, scanning and transmission electron microscopy. The dielectric property was also investigated. After 10 h of milling and 8 h of heat treatment at 1300 °C, X-ray diffraction analysis revealed LaSrNiO 4-δ single phase, exhibiting tetragonal structure with space group of I4/mmm. This result was confirmed by using the ED pattern for sample using the [001] orientation. The corresponding lattice images show the compound to be well ordered, indicating the absence of s…
Oxidation resistance of Ti 3 AlC 2 and Ti 3 Al 0.8 Sn 0.2 C 2 MAX phases: A comparison
2019
Ti3AlC2 and Ti3Al0.8Sn0.2C2 MAX phase powders are densified using Spark Plasma Sintering technique to obtain dense bulk materials. Oxidation tests are then performed over the temperature range 800-1000°C under synthetic air on the two different materials in order to compare their oxidation resistance. It is demonstrated that, in the case of the Ti3Al0.8Sn0.2C2 solid solution, the oxide layers consist in TiO2, Al2O3 and SnO2. The presence of Sn atoms in
Temperature dependence of luminescence of LiF crystals doped with different metal oxides
2020
Photoluminescence and cathodoluminescence of LiF crystals doped with different binary metal oxides were measured in the wide temperature range of 50-300 K and time interval of 10−8−10−1 s after the nanosecond electron excitation pulse. Both as-grown those and crystals irradiated by an electron beam in range of absorbed dose up to 103 Gy were studied. It is shown that spectral-kinetic characteristics of the luminescence depend on the absorbed dose (type of created/accumulated color centers), the irradiation temperature, the concentration of hydroxyl, which promotes incorporation of the MeO complex (Me: W, Ti, Fe, Li) into the crystal lattice, and the cation-dopants.