Search results for "Axia"

showing 10 items of 638 documents

Capillary condensation in cylindrical pores: Monte Carlo study of the interplay of surface and finite size effects.

2010

When a fluid that undergoes a vapor to liquid transition in the bulk is confined to a long cylindrical pore, the phase transition is shifted (mostly due to surface effects at the walls of the pore) and rounded (due to finite size effects). The nature of the phase coexistence at the transition depends on the length of the pore: For very long pores the system is axially homogeneous at low temperatures. At the chemical potential where the transition takes place fluctuations occur between vapor-like and liquid-like states of the cylinder as a whole. At somewhat higher temperatures (but still far below bulk criticality) the system at phase coexistence is in an axially inhomogeneous multi-domain …

Phase transitionMaterials scienceStatistical Mechanics (cond-mat.stat-mech)Condensed matter physicsCapillary condensationMonte Carlo methodFOS: Physical sciencesGeneral Physics and AstronomyAdsorptionLattice (order)CylinderIsing modelPhysical and Theoretical ChemistryAxial symmetryCondensed Matter - Statistical MechanicsThe Journal of chemical physics
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Gene amplification in fibroblasts from ataxia telangiectasia (AT) patients and in X-ray hypersensitive AT-like Chinese hamster mutants.

2001

In search of functions involved in the regulation of gene amplification, and given the relevance of chromosome breakage in initiating the process, we analyzed the gene amplification ability of cells hypersensitive to inducers of DNA double-strand breaks and defective in cell cycle control: two human fibroblast strains derived from patients affected by ataxia telangiectasia (AT) and two hamster mutant cell lines belonging to complementation group XRCC8 of the rodent X-ray-sensitive mutants. These mutants are considered hamster models of AT cells. To measure gene amplification, the frequency and the rate of occurrence of N-(phosphonacetyl)-L-aspartate resistant cells were determined. In both …

Phosphonoacetic AcidCancer ResearchAntimetabolites AntineoplasticMutantHamstermedicine.disease_causeRadiation ToleranceChinese hamsterCell LineAtaxia TelangiectasiaCricetulusMultienzyme ComplexesCricetinaeGene duplicationmedicineAspartate CarbamoyltransferaseAnimalsHumansDihydroorotaseMutationAspartic AcidbiologyX-RaysGenetic Complementation TestGene AmplificationGeneral MedicineCell cycleFibroblastsmedicine.diseasebiology.organism_classificationMolecular biologyDrug Resistance NeoplasmAtaxia-telangiectasiaMutationCarbamoyl-Phosphate Synthase (Glutamine-Hydrolyzing)Chromosome breakageCarcinogenesis
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Growth and optical characterization of indirect-gap AlxGa1−xAs alloys

1999

Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…

PhotoluminescenceMaterials scienceIII-V semiconductorsSiliconExcitonBinding energyGeneral Physics and Astronomychemistry.chemical_elementBinding energyEpitaxyMolecular physicssymbols.namesakePhonon spectraLiquid phase epitaxial growth:FÍSICA [UNESCO]PhotoluminescenceAluminium compoundsX-ray absorption spectroscopyGallium arsenide Semiconductor growthImpurity statesDopingUNESCO::FÍSICASemiconductor epitaxial layersCrystallographychemistrysymbolsPhotoluminescence ; Binding energy ; Raman spectra ; III-V semiconductors ; Aluminium compounds ; Gallium arsenide Semiconductor growth ; Liquid phase epitaxial growth ; Semiconductor epitaxial layers ; Impurity states ; Excitons ; Phonon spectraExcitonsRaman spectraRaman spectroscopy
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Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

2002

5 páginas, 4 figuras, 1 tabla.

PhotoluminescenceMaterials sciencePhononExcitonBinding energyPolaritonsGeneral Physics and AstronomyMolecular physicssymbols.namesakeCondensed Matter::Materials Science:FÍSICA [UNESCO]PolaritonZinc compoundsThin filmPhotoluminescencebusiness.industrySemiconductor epitaxial layersUNESCO::FÍSICAII-VI semiconductorsZinc compounds ; II-VI semiconductors ; Raman spectra ; Photoluminescence ; Excitons ; Polaritons ; Semiconductor epitaxial layerssymbolsOptoelectronicsExcitonsRaman spectrabusinessRaman spectroscopyRaman scattering
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Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy.

2006

Zn1−xCdxO(11math0) films have been grown on (01math2) sapphire (r–plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by Rutherford backscattering spectrometry. Higher Cd contents lead to the coexistence of Zn1−xCdxO alloys of different compositions within the same film. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.93 eV for the highest Cd concentration (8.5 at. %). The lattice deformation, due to Cd incorporation, has been described using a n…

PhotoluminescenceMaterials scienceRutherford backscatteringCadmium compoundsUNESCO::FÍSICAAnalytical chemistrySemiconductor epitaxial layersGeneral Physics and AstronomyII-VI semiconductorsSurface structureChemical vapor depositionRutherford backscattering spectrometryEpitaxyVapour phase epitaxial growthCrystallographyLattice constantZinc compounds ; Cadmium compounds ; II-VI semiconductors ; MOCVD ; Vapour phase epitaxial growth ; Semiconductor epitaxial layers ; Rutherford backscattering ; Photoluminescence ; Surface structure ; Buffer layers:FÍSICA [UNESCO]MOCVDSapphireBuffer layersMetalorganic vapour phase epitaxyZinc compoundsThin filmPhotoluminescence
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Cathodoluminescence and photoluminescence study of plastically deformed ZnTe bulk single crystals

2001

Samples of zinc telluride bulk single crystals, which were deformed in uniaxial compression, have been studied by photoluminescence (PL) and cathodoluminescence (CL). As a particular feature the deformed samples present a PL emission band peaked at 603 nm, whose intensity increases as the plastic deformation does. This band is related to the density of dislocations produced during the interaction of slip systems. This hypothesis is supported by CL images. which reveal the activation of the successive slip systems corresponding to different levels of deformation.

PhotoluminescenceMaterials scienceZinc tellurideCondensed matter physicsFísica de materialesMineralogyUniaxial compressionCathodoluminescenceCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsEmission bandchemistry.chemical_compoundchemistryMaterials ChemistryElectrical and Electronic EngineeringDislocationDeformation (engineering)Intensity (heat transfer)
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Chapter 1 The Resolution Challenge in 3D Optical Microscopy

2009

Publisher Summary This chapter discusses the theoretical principles of 3D microscopy with the widespread realizations of 3D microscopy.Based on the paraxial diffraction equations, it has been shown that conventional microscopes, when dealing with 3D fluorescent samples, provide sets of 2D images. These images of the different transverse sections of the 3D object contain, in addition to the sharp image of the in focus section, the blurred images of the rest of the specimen. The paraxial formalism has been generalized in a very simple way to a non-paraxial context, showing that the equations that govern non-paraxial imaging are similar to those that govern paraxial imaging. The only differenc…

Physics2d imagesFormalism (philosophy of mathematics)OpticsMicroscopeOptical microscopebusiness.industrylawParaxial approximationbusiness3d microscopyKirchhoff's diffraction formulalaw.invention
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A Unified Phenomenological Description of Quadrupole Excitations in Even-Even Nuclei

1976

A phenomenological model is developed for the collective quadrupole properties of all even-even nuclei. Rotational. vibrational and transitional nuclei are included in the model on an equal footing. A Bohr-type intrinsic Hamiltonian for harmonic quadrupole vibrations about an axially deformed shape is solved exactly. States of good angular momentum are projected out of the intrinsic states, and they are made orthogonal by a Schmidt scheme. The angular-momentum and phonon-number composition of the states is analyzed at various stages; states with K = 1 are found spurious. Excitation energies for the ground, β, and γ bands are calculated as expectation values of a radically simplified nuclear…

PhysicsAngular momentum010308 nuclear & particles physicsPhononCondensed Matter Physics01 natural sciencesAtomic and Molecular Physics and Opticssymbols.namesakeQuantum mechanics0103 physical sciencesPhenomenological modelQuadrupolesymbols010306 general physicsHamiltonian (quantum mechanics)AnisotropyAxial symmetryMathematical PhysicsExcitationPhysica Scripta
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Quantum effects in the capture of charged particles by dipolar polarizable symmetric top molecules. I. General axially nonadiabatic channel treatment

2013

The rate coefficients for capture of charged particles by dipolar polarizable symmetric top molecules in the quantum collision regime are calculated within an axially nonadiabatic channel approach. It uses the adiabatic approximation with respect to rotational transitions of the target within first-order charge-dipole interaction and takes into account the gyroscopic effect that decouples the intrinsic angular momentum from the collision axis. The results are valid for a wide range of collision energies (from single-wave capture to the classical limit) and dipole moments (from the Vogt-Wannier and fly-wheel to the adiabatic channel limit).

PhysicsAngular momentumRange (particle radiation)TemperatureGeneral Physics and AstronomyClassical limitCharged particleAdiabatic theoremDipoleQuantum TheoryParticle SizePhysical and Theoretical ChemistryAtomic physicsAdiabatic processAxial symmetryThe Journal of Chemical Physics
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Analytical and Semi-Analytical Solutions for the Force Between Circular Loops in Parallel Planes

2013

Closed-form solutions are presented for the force between noncoaxial coplanar circular current loops. A semi-analytical solution is given for the case where the loops lie in parallel planes. Numerical results are given which cross check these solutions against each other and against an independently developed method. The closed form solution for the force between a circular loop and a coaxial circular arc segment is also given.

PhysicsArc (geometry)Classical mechanicsMathematical analysisElectrical and Electronic EngineeringClosed-form expressionCurrent (fluid)CoaxialCircular loopElectronic Optical and Magnetic MaterialsIEEE Transactions on Magnetics
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