Search results for "BAND"
showing 10 items of 2610 documents
Photonic band gaps in highly ionic medium: CuCl, CuBr, CuI
2003
Abstract Using the transfer-matrix-method, we have studied the propagation of electromagnetic waves through two-dimensional (2D) and three-dimensional (3D) dispersive photonic band gap (PBG) structures constructed from copper halides materials, especially from CuCl compounds. A special attention has been paid to the effect of the polariton gap on the PBG properties. This study reveals that “Twin gaps” and “Twin brothers” concepts and the flattened bands phenomena in both polarizations and for both structures (i.e. 2D and 3D) are all consequences of the strong photon–phonon coupling, particularly near the long wave length transverse optical phonon frequency. Furthermore, results for comparis…
Optical properties of wurtzite and rock-salt ZnO under pressure
2005
Abstract This paper reports on the pressure dependence of the optical absorption edge of ZnO in the wurtzite and rock-salt phase, up to 14 GPa. Both vapor-phase monocrystals and pulsed-laser-deposition thin films have been investigated. In both types of samples the wurtzite to rock-salt transition is observed at 9.7±0.2 GPa. The absorption tail of the fundamental gap, as measured in monocrystals, exhibits a pressure coefficient of 24.5±2 meV/GPa. The evolution under pressure of the full absorption edge of the wurtzite phase is studied with thin film samples, yielding a slightly lower pressure coefficient (23.0±0.5 meV/GPa for the A–B exciton). Rock-salt ZnO is shown to be an indirect semico…
First principles hybrid DFT calculations of BaTiO3/SrTiO3(001) interface
2015
Abstract We present a first-principles study of BaTiO 3 /SrTiO 3 (001) interfaces taking into account non-stoichiometric compositions. By means of hybrid exchange–correlation functional within density functional theory (DFT) we demonstrate that charge redistribution in the interface region weakly affects the electronic structure of studied material, while change in the stoichiometry (termination of deposited BaTiO 3 (001) thin film) yields in significant shifts of band edges. The optical band gap of BaTiO 3 /SrTiO 3 (001) interface depends mostly on BaO or TiO 2 termination of the upper layer. Based on results of our calculations we predict enhancement of the Ti–O chemical bond covalency ne…
Broadband Dielectric Spectroscopy of PSN-Rich PMN-PSN Ceramics
2008
The broadband dielectric permittivity of ordered 0.1PMN-0.9PSN and disordered 0.2PMN-0.8PSN ceramics was investigated. The anomaly of dielectric permittivity is clearly seen in the region of 370 K for 0.1 PMN-0.9 PSN at all frequencies. 0.2 PMN-0.8 PSN shows relaxor behaviour with huge frequency dispersion below 350 K. Calculated distribution of relaxation times shows noticeable influence of polar nano regions to the total dielectric spectrum below 320 K with the longest relaxation times edge diverging according to the Vogel-Fulcher law. In 0.1 PMN-0.9 PSN two a little overlapped peaks present in the distribution of relaxation times, influenced by displacive lead motions at high frequencies…
Band Gap Engineering and Trap Depths of Intrinsic Point Defects in RAlO3 (R = Y, La, Gd, Yb, Lu) Perovskites
2021
The work was supported by the Polish National Science Centre (Project No. 2018/31/B/ST8/00774), by the NATO SPS Project G5647, and by the Ministry of Education and Science of Ukraine (Project DB/Kinetyka no. 0119U002249). L.V. acknowledges support of the National Research Foundation of Ukraine under Grant No. 2020.02/0373 “Crystalline phosphors’ engineering for biomedical applications, energy saving lighting and contactless thermometry”. Researchers from Tartu were supported by the ERDF fundings in Estonia granted to the Centre of Excellence TK141 “Advanced materials and high-technology devices for sustainable energetics, sensorics and nanoelectronics (HiTechDevices)” (Grant No. 2014-2020.4…
Direct observation of Drude behavior in the heavy-fermion by broadband microwave spectroscopy
2005
Abstract Previous optical studies on the heavy-fermion system UPd 2 Al 3 down to frequencies of about 1 cm - 1 ( = 30 GHz ) revealed a well-pronounced pseudogap at low frequencies (below 3 cm - 1 ) that was attributed to magnetic correlations. Thus, the optical conductivity at even lower frequencies is of notable interest because the Drude roll-off (the high-frequency characteristic of a metal which will give information on the quasiparticle dynamics) remained hidden at extremely low frequencies. Using a novel cryogenic broadband microwave spectrometer employing the Corbino geometry we have studied the complex optical conductivity of UPd 2 Al 3 thin films in the frequency range from 45 MHz …
Band convergence in the non-cubic chalcopyrite compounds Cu_2MGeSe_4
2014
Inspired by recent theoretical predictions on band convergence in the tetragonal chalcopyrite compounds, we have explored the influence of the crystal structure on the transport and bandstructure of different quaternary chalcopyrites. In theory, a changing lattice parameter ratio of c/2a towards unity should lead to band convergence due to a more cubic and higher symmetry structure. In accordance with this prediction, the different solid solutions explored in this manuscript show a significant impact on the electronic transport depending on the ratio of the lattice parameters. An increasing lattice parameter ratio results in an increase of the carrier effective masses which can be explained…
Diffraction-efficiency oscillations in amorphous As_2S_3 films
1999
An experimental study of the holographic gratings recorded in nonannealed, thermally with time relaxed amorphous As2S3 films by 514.5-nm light in the presence of 632.8-nm readout light is carried out. The dependences of the maximal first-order diffraction efficiency on the holographic grating period was studied in a wide range of periods, from 0.40 to 70.0 µm. A peculiar oscillatory diffraction-efficiency temporal behavior occurring under certain conditions is reported. The obtained results are discussed in terms of photoinduced structural changes, relaxational structural changes, photoinduced anisotropy, and photoinduced recharging of the localized states in the bandgap. The diffraction-ef…
Surface band-gap narrowing in quantized electron accumulation layers.
2010
An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering.
Electronic Properties of 6H Hexagonal SrMnO3
2015
SrMnO3 ceramic was prepared by conventional high-temperature sintering method. Dielectric studies were performed within the temperature range 125–300 K at the frequency 10–400 kHz. The electronic properties of stoichiometric and oxygen defected SrMnO3 crystal in hexagonal 6H- P63/mmc symmetry at 0 K were calculated in ab initio procedure based on density functional theory using the Spanish Initiative for Electronic Simulations with Thousands of Atoms (SIESTA) code. The lattice parameters and density of states were obtained. The ideal 6H-SrMnO3 crystal has the band gap energy about 0.2–0.3 eV at 0 K. Contribution of an exchange-correlation energy into the total energy is about 32%, a magneti…