Search results for "BAND"
showing 10 items of 2610 documents
Metal Chalcohalides: Next Generation Photovoltaic Materials?
2021
Metal chalcohalides have recently been highlighted as so-far overlooked semiconductors that could play an important role in the future of photovoltaics (PV). Indeed, the blooming field of emergent PV technologies is still in search for stable, efficient, and environmentally-friendly light-harvesting materials to be used either in single-junction solar cells or multijunction devices in combination with silicon or another absorbers. Under the broad terms of metal chalcohalides, there exists a plethora of semiconductor materials with different chemical, structural, and optoelectronic characteristics. While some have already been implemented in solar cells with power conversion efficiencies up …
Sloped-wall thin-film photonic crystal waveguides
2005
The effect of the slope of the groove walls in the behavior of thin-film one-dimensional photonic crystal waveguides is extensively studied. In this respect, we point out its influence on the modal dispersion relations and then on the bandgap structure in general. Likewise, we also prove the lack of accuracy in the evaluation of the bandgap edges when material dispersion is ignored. The extreme importance of both facts, the wall slope and the material dispersion, in the analysis and design of realistic photonic crystal devices is emphasized. In particular, we exploit the wall slope as a new design parameter. By suitably choosing the value of the above parameter, sloped-wall photonic crystal…
Transmission anisotropy in triple-film opal photonic crystals
2006
Summary form only given: For photonic crystals (PhCs) to have successful impact on advancement of optical circuits and realisation of various functionalities, the incorporation of artificial defects into 3D PhCs is necessary. Opal films represent a convenient approach to the realisation of 3D PhCs. Taking into account the limited flexibility of the self-assembly, the first steps can be studies of planar defects in opals and hetero-opals. Characterisation of heteroPhCs should include the investigation of the dispersion of photonic bandgaps (PBG). While the dispersion of low-order PBGs in opal films is well known, the high order PBGs were hardly studied so far owing to high requirements to th…
Tuning the hole injection barrier in the intermolecular charge-transfer compoundDTBDT-F4TCNQ at metal interfaces
2014
Molecular monolayers of the charge-transfer salt dithienobenzodithiophene-tetrafluorotetracyanoquinodimethane (DTBDT-F${}_{4}$TCNQ) have been deposited on C(R$15\ifmmode\times\else\texttimes\fi{}3$)/W(110), Co/W(110), and hcp Co(0001) using molecular beam epitaxy in an ultrahigh vacuum. The integrity of the deposited molecules has been confirmed by scanning tunneling microscopy. Scanning tunneling spectroscopy has been used to determine the energetic positions of the highest occupied (HOMO) and lowest unoccupied (LUMO) molecular orbital of acceptor and donor in the pure and in the mixed phase. The mixed charge transfer phase exhibits a new HOMO close to the Fermi edge depicting a charge tra…
FAPb0.5Sn0.5I3: A Narrow Bandgap Perovskite Synthesized through Evaporation Methods for Solar Cell Applications
2020
The tunability of the optoelectrical properties upon compositional modification is a key characteristic of metal halide perovskites. In particular, bandgaps narrower than those in conventional lead‐based perovskites are essential to achieve the theoretical efficiency limit of single‐absorber solar cells, as well as develop multijunction tandem devices. Herein, the solvent‐free vacuum deposition of a narrow bandgap perovskite based on tin-lead metal and formamidinium cation is reported. Pinhole‐free films with 1.28 eV bandgap are obtained by thermal codeposition of precursors. The optoelectrical quality of these films is demonstrated by their use in solar cells with a power conversion effici…
Broadband microwave gas sensor: A coaxial design
2010
The method of gas detection by a broadband microwave gas sensor is presented in this article. The principle of this method is to use a sensitive material as substrate of a transmission coaxial line. The sensor represents an open line with an extreme surface in contact with gas. The interaction with the gas and the surface induces a dielectric variation of the substrate. From experimental results, the interaction between the sensitive material and each tested gas present a specific frequency spectrum of the reflection coefficient at the input of the line. The proposed method has the advantage of a compact size, wide bandwidth, simple structure, and capable with all sensitive materials. © 201…
Long-cavity all-fiber ring laser actively mode locked with an in-fiber bandpass acousto-optic modulator.
2013
We demonstrate low-frequency active mode locking of an erbium-doped all-fiber ring laser. As the mode locker, we used a new in-fiber bandpass acousto-optic modulator showing 74% modulation depth, 3.7 dB power insertion losses, 4.5 nm of optical bandwidth, and 20 dB of nonresonant light suppression. The laser generates 330 ps mode-locked pulses over a 10 ns pedestal, at a 1.538 MHz frequency, with 130 mW of pump power. Fil: Cuadrado Laborde, Christian Ariel. Universidad de Valencia; España. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico La Plata. Centro de Investigaciones Opticas (i); Argentina. Provincia de Buenos Aires. Gobernación. Comisión de In…
A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter
2014
This paper presents a comparison of the behavior of the intrinsic diode of silicon (Si) and silicon carbide (SiC) MOSFETs. The study was done for 1200 V Si and SiC MOSFETs. The data sheet from manufacturers shows the characteristics of MOSFET' intrinsic diode when gate source voltage (VGS) is 0 V. There are applications where the MOSFET' intrinsic diode is used while VGS is different than 0 V. One of these applications is induction heating, where depending on the load and the regulation system, the diode can conduct a significant part of the inverter current. In most applications which use the MOSFET' intrinsic diode, the turn ON of the intrinsic diode happens at VGS = 0 V. After a blanking…
Exploring 10 Gb/s transmissions in Titanium dioxide based waveguides at 1.55 pm and 2.0 pm
2017
Exploring new spectral bands for optical transmission is one of the solutions to support the increasingly demand of data traffic. The recent development of dedicated hollow-core photonic bandgap fibers [1], associated to the emergence of thulium doped fiber amplifiers [2] has recently focused the attention further in the infrared, and more specifically around 2 μm. Regarding integrated photonics, it becomes therefore interesting to find a suitable platform to operate at 2 μm as well as in the other more conventional spectral bands (going from 800 nm to 1550 nm). Here, we propose titanium dioxide (TiO 2 ) as a good candidate for integrated waveguide photonics and demonstrate, for the first t…
Chirped fibre Bragg gratings for phased-array antennas
1997
A variable delay line for phased-array antennas based on a chirped fibre Bragg grating is demonstrated. The time delay of a microwave modulating signal is modified by scanning in wavelength a chirped grating. In this initial experiment, time delay variations up to 556 ps have been achieved using a grating of 0.4 nm bandwidth and 6 cm length and modulating in the frequency range 390 MHz-5.20 GHz.