Search results for "BAND"
showing 10 items of 2610 documents
Temperature effects on the IR absorption bands of hydroxyl and deuteroxyl groups in silica glass
2009
Abstract In this report we will show the changes of the band shape of the hydroxyl group (SiOH) infrared (IR) absorption band (∼3670 cm −1 ) in silica glass induced by lowering temperature in the range from 290 to 20 K. This band is considered as the overlap of several spectral components associated to the vibrational activity of hydroxyl groups in different bond configurations. By a suitable analysis of the experimental band profile in terms of different sub-bands, we studied the thermal evolution of each component and we reconsidered their assignations. For comparison we examined the SiOD absorption band (∼2710 cm −1 ) as a function of temperature as well. Our data can be interpreted as a…
Regio(ir)regular naphthalenediimide- and perylenediimide-bithiophene copolymers: How MO localization controls the bandgap
2016
Absorption spectra of regio(ir)regular naphthalenediimide (NDI)- and perylenediimide (PDI)-bithiophene (2T) donor/acceptor (D/A) copolymers are surprisingly similar despite cross-conjugation in the regioirregular structures. This result is traced back to largely localized frontier molecular orbitals (FMOs) as revealed by (time-dependent) DFT calculations. Interestingly, while the FMOs of the P(PDI-2T) copolymer are localized solely in the PDI units, they are predominantly localized in the respective D/A units of the P(NDI-2T) copolymer. The pronounced CT character of the lowest singlet state in P(NDI-2T) should give rise to a close lying CT triplet state, generating small singlet–triplet ga…
In-situ observation of beta-ray induced UV optical absorption in a-SiO2: radiation darkening and room temperature recovery
2006
International audience; We studied the optical absorption in the 3.0-6.2 eV range induced in bulk amorphous SiO2 by beta-ray irradiation up to similar to 1 MGy at room temperature. The induced absorption was measured in situ both during irradiation and in the post irradiation time. Our data evidence E', center as the main defect induced by irradiation and the partial decay of their absorption band at about 5.8 eV after irradiation. A quantitative analysis of the time evolution of the induced absorption shows that the transmission recovery observed after irradiation is compatible with the reaction of radiation-induced defects with H-related (H-2, H2O) species diffusing in the amorphous matrix
Intrinsic absorption threshold of stishovite and coesite
2004
Abstract The optical absorption spectra of the small mono-crystals samples of stishovite and coesite were studied at first. The intrinsic absorption threshold of stishovite is determined at 8.75 eV, being probably, highest in the family of different crystalline polymorph modifications of silicon dioxide. The absorption spectrum of stishovite is independent of temperature (studied in the range 290–450 K). The intrinsic absorption threshold of coesite mono-crystal situated near 8.6 eV at 293 K, coincides within experimental errors with that of α-quartz crystal, and depends on temperature, as used to be for the tetrahedron structured silicon dioxide crystalline modifications. A broad absorptio…
Optical absorption of divalent metal tungstates: Correlation between the band-gap energy and the cation ionic radius
2008
We have carried out optical-absorption and reflectance measurements at room temperature in single crystals of AWO4 tungstates (A = Ba, Ca, Cd, Cu, Pb, Sr, and Zn). From the experimental results their band-gap energy has been determined to be 5.26 eV (BaWO4), 5.08 eV (SrWO4), 4.94 eV (CaWO4), 4.15 eV (CdWO4), 3.9-4.4 eV (ZnWO4), 3.8-4.2 eV (PbWO4), and 2.3 eV (CuWO4). The results are discussed in terms of the electronic structure of the studied tungstates. It has been found that those compounds where only the s electron states of the A2+ cation hybridize with the O 2p and W 5d states (e.g BaWO4) have larger band-gap energies than those where also p, d, and f states of the A2+ cation contribu…
A Metaheuristic Bandwidth Allocation Scheme for FiWi Networks Using Ant Colony Optimization
2015
Optical-wireless access networks constitute a quite attractive solution to meet the ever-increasing bandwidth requirements of end-users, offering significant benefits such as ubiquitous coverage in the wireless domain and huge bandwidth in the optical domain. However, converging optical and wireless networking technologies, with Passive Optical Networks (PONs) and 4G wireless standards, such as the Worldwide Interoperability for Microwave Access (WiMAX) and the Long Term Evolution (LTE), entails major challenges that need to be addressed. In this context, designing an efficient and fair bandwidth distribution with Quality of Service (QoS) support is a difficult task due to the interdependen…
Pulsating in Unison at Optical and X-Ray Energies: Simultaneous High Time Resolution Observations of the Transitional Millisecond Pulsar PSR J1023+00…
2019
PSR J1023+0038 is the first millisecond pulsar discovered to pulsate in the visible band; such a detection took place when the pulsar was surrounded by an accretion disk and also showed X-ray pulsations. We report on the first high time resolution observational campaign of this transitional pulsar in the disk state, using simultaneous observations in the optical (TNG, NOT, TJO), X-ray (XMM-Newton, NuSTAR, NICER), infrared (GTC) and UV (Swift) bands. Optical and X-ray pulsations were detected simultaneously in the X-ray high intensity mode in which the source spends $\sim$ 70% of the time, and both disappeared in the low mode, indicating a common underlying physical mechanism. In addition, o…
Effects of post-growth annealing on structural and compositional properties of the Co2Cr0.6Fe0.4Al surface and its relevance for the surface electron…
2009
In this study we investigate the influence of post-growth annealing on different Co2Cr0.6Fe0.4Al samples. We find strong changes in the geometric surface structure as well as in the element specific concentrations during the annealing process. These irreversible changes go in hand with characteristic changes in the electron spin polarization (ESP) at the surface: as observed in Cinchetti et al (2007 J. Phys. D: Appl. Phys. 40 1544), the iron buffered sample shows the largest spin polarization at the Fermi level. The latter remains positive as a consequence of the reduced density of states for the minority carriers due to the predicted minority gap, which can be clearly seen for all samples …
Incorporation of Li dopant into Cu2ZnSnSe4 photovoltaic absorber: hybrid-functional calculations
2015
We have studied the formation of Li extrinsic defects in CuZnSnSe by first-principles hybrid functional calculations. Li atoms in the Cu site (Li) and Li atoms in the Se site (Li) are the most and the least stable point defect, respectively. The formation energies of two Li interstitial defects with different numbers of nearest neighbors are the same. These interstitial point defects act as a donor but do not create gap states. Formation of the acceptor point defects (Li and Li) is less likely in p-type CuZnSnSe compared with n-type CuZnSnSe. In contrast to Li which does not create gap states, the formation of Li creates two charge transition levels in the middle of the bandgap which might …
Q-switching of an all-fiber ring laser based on in-fiber acousto-optic bandpass modulator2017
2017
Active Q-switching of an all-fiber ring laser utilizing a novel in-fiber acousto-optic tunable bandpass filter (AOTBF) is reported. The transmission characteristics of the AOTBF are controlled by amplitude modulation of the acoustic wave; the device exhibits a 3-dB power insertion loss, 0.91-nm optical bandwidth, and 28-dB nonresonant light suppression. Cavity loss modulation is achieved by full acousto-optic mode re-coupling cycle induced by traveling flexural acoustic waves. When the acoustical signal is switched on, cavity losses are reduced, and then, laser emission is generated. In addition, by varying the acoustic wave frequency, a wide wavelength tuning range of 30.7 nm is achieved f…