Search results for "BI2TE3"
showing 3 items of 3 documents
Surface structure promoted high-yield growth and magnetotransport properties of Bi2Se3 nanoribbons
2019
AbstractIn the present work, a catalyst-free physical vapour deposition method is used to synthesize high yield of Bi2Se3 nanoribbons. By replacing standard glass or quartz substrates with aluminium covered with ultrathin porous anodized aluminium oxide (AAO), the number of synthesized nanoribbons per unit area can be increased by 20–100 times. The mechanisms of formation and yield of the nanoribbons synthesized on AAO substrates having different arrangement and size of pores are analysed and discussed. It is shown that the yield and average length of the nanoribbons can base tuned by adjustment of the synthesis parameters. Analysis of magnetotransport measurements for the individual Bi2Se3…
Bi2Te3 nanostrukturētu pārklājumu sintēze izmantojot fizikālo tvaiku nogulsnēšanas metodi
2018
Bi2Te3 nanostrukturētu pārklājumu sintēze izmantojot fizikālo tvaiku nogulsnēšanas metodi. Anšics P. Bakalaura darbs, 29 lappuses, 11 attēli, 8 tabulas, 26 literatūras avoti, 1 pielikums. Latviešu valodā. Darbā veikta Bi2Te3 nanostrukturēta pārklājuma sintēze izmantojot fizikālo tvaiku nogulsnēšanas metodi uz stikla un vizlas substrātiem izmantojot kristālisku bismutu un telūru kā izejvielas. Pārklājumus sintezēja ar nolūku tālāk pētīt to termoelektriskās īpašības un iespējamos pielietojumus. Iegūtie paraugi tika pētīti skenējošā elektronu mikroskopā un ar enerģijas dispersīvo rentgenstaru spektroskopiju, lai novērtētu pārklājuma struktūru un sastāvu, kas ļautu iegūt optimālos sintēzes apst…
High-pressure studies of topological insulators Bi2Se3, Bi2Te3, and Sb2Te3
2013
Bi2Se3, Bi2Te3, and Sb2Te3 are narrow bandgap semiconductors with tetradymite crystal structure (R-3m) which have been extensively studied along with their alloys due to their promising operation as thermoelectric materials in the temperature range between 300 and 500¿K. Studies on these layered semiconductors have increased tremendously in the last years since they have been recently predicted and demonstrated to behave as 3D topological insulators. In particular, a number of high-pressure studies have been done in the recent years in these materials. In this work we summarize the main results of the high-pressure studies performed in this family of semiconductors to date. In particular, w…