Search results for "Band structure"
showing 10 items of 215 documents
Electron-electron interactions in artificial graphene
2012
Recent advances in the creation and modulation of graphenelike systems are introducing a science of ``designer Dirac materials''. In its original definition, artificial graphene is a man-made nanostructure that consists of identical potential wells (quantum dots) arranged in an adjustable honeycomb lattice in the two-dimensional electron gas. As our ability to control the quality of artificial graphene samples improves, so grows the need for an accurate theory of its electronic properties, including the effects of electron-electron interactions. Here we determine those effects on the band structure and on the emergence of Dirac points.
Ab initio calculations of doped TiO2 anatase (101) nanotubes for photocatalytical water splitting applications
2016
Abstract TiO 2 (titania) is one of the promising materials for photocatalytic applications. In this paper we report on recently obtained theoretical results for N and S doped, as well as N+S co-doped 6-layer (101) anatase nanotube (NT). First principles calculations in our study have been performed using a modified B3LYP hybrid exchange-correlation functional within density functional theory (DFT). Here we discuss the energy of defect formation mechanism and electronic band structure for nanotubes under study. We also report on influence of dopant concentration on the NT's band structure and discuss the defect–defect interactions.
Ab initio simulations on N and S co-doped titania nanotubes for photocatalytic applications
2015
In this paper we present the results of quantum chemical modeling for energetically stable anatase (001) TiO2 nanotubes, undoped, doped, and codoped with N and S atoms. We calculate the electronic structure of one-dimensional (1D) nanotubes and zero-dimensional (0D) atomic fragments cut out from these nanotubes, employing hybrid density functional theory with a partial incorporation of an exact, nonlocal Hartree–Fock exchange within the formalism of the linear combination of atomic orbitals, as implemented in both CRYSTAL and NWChem total energy codes. Structural optimization of 1D nanotubes has been performed using CRYSTAL09 code, while the cut-out 0D fragments have been modelled using the…
ChemInform Abstract: Nb2Te3, a Niobium Sesquitelluride with Te22- Groups.
2010
The new binary compound Nb2Te3 was synthesized by reduction of NbTe2 with Ga metal; different from the formally analogous Ta2Te3 it crystallizes in the Mo2As3 structure type; based on the results of band structure calculations Nb2Te3 is metallic with quasi one-dimensional metal electronic properties.
High-spin bands in117,119I and118Xe
1984
Excited states in117I,118Xe and119I were populated in the reactions106Pd+16O and108, 110Cd+12C. The groundstate band in118Xe was observed to its (18+) member and the 11/2− bands in117I and119I to their (35/2−) and (43/2−) members, respectively. The structure of the bands in the I isotopes is interpreted as aπ h11/2 proton coupled to an even-even band structure in Xe, and the band crossings observed in118Xe and119I are interpreted in the Cranked Shell Model framework asABn ofv h11/2.
Influence of F centres on structural and electronic properties of AlN single-walled nanotubes
2007
We analyse the influence of uncharged N vacancies (neutral F centres), created either under conditions of AlN nanotube growth or by its soft irradiation, on the atomic and electronic structure. Periodic one-dimensional (1D) density functional theory (DFT) calculations on models of defective single-walled nanotubes (SW NTs) allow us to analyse how NT chirality and concentration of F centres change their properties compared to the corresponding defect-free nanotubes. We have simulated reconstruction around periodically repeated F centres on 1 nm AlN SW NTs with armchair- and zigzag-type chiralities. To achieve the limit of an isolated vacancy for both chiralities, we have considered different…
Theoretical determination of the geometric and electronic structures of oligorylenes and poli(peri‐naphthalene)
1992
We present a theoretical investigation of the electronic structure of oligorylenes (from perylene to heptarylene, including also the naphthalene molecule) and their corresponding polymer poly(peri‐naphthalene) (PPN) using the nonempirical valence effective (VEH) method. The geometry of the unit cell used to generate the polymer is extrapolated from the PM3‐optimized molecular geometries of the longest oligorylenes. That geometry shows some bond alternation along the perimeter carbon chains and a bond length of ≊1.46 Å is calculated for the peri bonds connecting the naphthalene units. The VEH one‐electron energy level distributions calculated for oligorylenes are used to interpret the experi…
Theoretical study of the effect of substituent and backbone conformation on the electronic properties of symmetrically substituted poly(di‐n‐alkylsil…
1994
We present the results of ab initio 3‐21G∗ geometry optimizations and valence effective Hamiltonian (VEH) band structure calculations aimed at determining the evolution of the geometric and electronic (ionization potential, electron affinities, and band gaps) properties of all‐trans poly(dimethylsilane), poly(diethylsilane), poly(di‐n‐propylsilane), and poly(di‐n‐butylsilane) when increasing the size of the alkyl group. In the latter polymer, we have also studied the 7/3 conformation, in order to analyze the effect of the backbone conformation on the geometric and electronic structure. The VEH ionization potentials of all‐trans poly(di‐n‐alkylsilanes) are almost equal, and as experimental p…
Tuning the band gap of PbCrO4 through high-pressure: Evidence of wide-to-narrow semiconductor transitions
2014
The electronic transport properties and optical properties of lead(II) chromate (PbCrO4) have been studied at high pressure by means of resistivity, Hall-effect, and optical-absorption measurements. Band-structure first-principle calculations have been also performed. We found that the low-pressure phase is a direct band-gap semiconductor (Eg = 2.3 eV) that shows a high resistivity. At 3.5 GPa, associated to a structural phase transition, a band-gap collapse takes place, becoming Eg = 1.8 eV. At the same pressure the resistivity suddenly decreases due to an increase of the carrier concentration. In the HP phase, PbCrO4 behaves as an n-type semiconductor, with a donor level probably associat…
Phase Behavior of TmVO4 under Hydrostatic Compression: An Experimental and Theoretical Study
2020
We present a structural and optical characterization of magnetoelastic zircon-type TmVO4 at ambient pressure and under high pressure. The properties under high pressure have been determined experimentally under hydrostatic conditions and theoretically using density functional theory. By powder X-ray diffraction we show that TmVO4 undergoes a first-order irreversible phase transition to a scheelite structure above 6 GPa. We have also determined (from powder and single-crystal X-ray diffraction) the bulk moduli of both phases and found that their compressibilities are anisotropic. The band gap of TmVO4 is found to be Eg = 3.7(2) eV. Under compression the band gap opens linearly, until it unde…