Search results for "Capacitance"
showing 10 items of 112 documents
The weight function for charges - A rigorous theoretical concept for Kelvin probe force microscopy
2016
A comprehensive discussion of the physical origins of Kelvin probe force microscopy (KPFM) signals for charged systems is given. We extend the existing descriptions by including the openloop operation mode, which is relevant when performing KPFM in electrolyte solutions. We define the contribution of charges to the KPFM signal by a weight function, which depends on the electric potential and on the capacitance of the tip-sample system. We analyze the sign as well as the lateral decay of this weight function for different sample types, namely, conductive samples as well as dielectric samples with permittivities both larger and smaller than the permittivity of the surrounding medium. Dependin…
Dielectric properties and partial discharge endurance of polypropylene-silica nanocomposite
2010
This paper presents the results of the dielectric properties and partial discharge endurance measurements conducted on polypropylene (PP)-silica nanocomposite. The material compounds were analyzed with micro-Raman spectroscopy, X-ray tomography and transmission electron microscopy (TEM). ac and dc breakdown strength of the materials was measured. Dielectric response, capacitance and loss factor of the film samples were measured as a function of temperature and frequency. Partial discharge (PD) endurance of the reference PP and PP Silica nanocomposite was studied as a function of ac voltage. Material surfaces were analyzed after PD stress with optical microscopy. All dielectric measurements …
Pressure Dependence of the Low-Frequency Dielectric Constant in III-VI Semiconductors
1999
In this work we report on the pressure dependence of the low-frequency dielectric constant parallel to the c-axis (e∥) in GaS, GaSe, and InSe as obtained from direct capacitance measurements. A large increase of e∥ with pressure has been observed. The pressure change of the lattice polarizability along the c-axis is calculated in the framework of a rigid-ion model from the change of the angle of the anion–cation bond with respect to the layer plane, which results in a slight increase of the lattice contribution. Consequently, the pressure behaviour of e∥ is proposed to arise from the large increase of the electronic polarizability along the c-axis. This is explained through a decrease of th…
The Influence of Thermal Treatment on the Electronic Properties of a-Nb2O5
2009
The effect of thermal treatments for 1h at 250{degree sign}C in air or under vacuum on the electronic structure of thick amorphous anodic niobia was characterized by electrochemical impedance, differential admittance (DA) and photocurrent spectroscopy (PCS). The analysis of anodized niobia has revealed that it behaves as a pure dielectric. The thermal treatment in air increases the value of the differential capacitance of the niobia sample. The effect is stronger when the thermal treatment is carried out in vacuum and can be cancelled out by reanodizing the oxide to the initial formation potential. In the case of thermally vacuum-treated sample, a behavior typical of semiconducting amorphou…
Photoelectrochemical characterization of amorphous anodic films on Ti-6at.%Si
2013
Abstract The solid state properties of anodic films grown galvanostatically on sputtering-deposited Ti–6at.%Si alloys were studied as a function of the formation voltage (5–40 V). From the photocurrent spectra a band gap of ∼3.4 eV was estimated for all the investigated thicknesses, which is almost coincident with the value measured for amorphous TiO 2 . The photocharacteristics allowed to estimate the flat band potential of the films, which resulted to be more anodic for thicker layers and allowed to evidence a change from n-type semiconducting material to insulator by increasing the formation voltage. A dielectric constant of ∼31 was estimated by differential capacitance measurements. The…
Band gap narrowing and dielectric constant enhancement of (NbxTa(1-x))2O5 by electrochemical nitrogen doping
2018
Abstract Anodic films were grown to 5 V and 50 V on Nb, Ta and Ta-Nb sputtering deposited alloys in 0.1 M ammonium biborate solutions in order to induce N incorporation. Their properties were compared to those of N free anodic films grown to the same formation voltages in 0.1 M NaOH. Photoelectrochemical measurements evidenced the presence of optical transitions at energy lower than the band gap of the oxides, attributed to localized states located close to the valence band mobility edge of the films, generated by N 2p orbitals, with consequent narrowing of the band gap. Since N incorporation occurs in the outer 70% of the anodic films, the dependence of the measured photocurrent as a funct…
Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate
2013
We report on incorrect carrier type identification achieved by Hall effect measurements performed on ZnO films grown by pulsed laser deposition on InP substrates and subsequently annealed for 1 h at 600 C in air. While Hall measurements, after post-growth annealing, reveal a change in the electrical properties of the films, from n-type to p-type, both photocurrent-based and standard C V measurements performed on the same samples show no change in the native n-type doping of the ZnO films. A possible interpretation of the two results is reported. In particular, p-type conductivity observed by Hall effect may be ascribed to a highly conductive thin layer formed during the annealing process at…
Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC
2020
Journal of Instrumentation 15(02), P02005 (2020). doi:10.1088/1748-0221/15/02/P02005
MALTA: a CMOS pixel sensor with asynchronous readout for the ATLAS High-Luminosity upgrade
2018
Radiation hard silicon sensors are required for the upgrade of the ATLAS tracking detector for the High- Luminosity Large Hadron Collider (HL-LHC) at CERN. A process modification in a standard 0.18 μm CMOS imaging technology combines small, low-capacitance electrodes (∼2 fF for the sensor) with a fully depleted active sensor volume. This results in a radiation hardness promising to meet the requirements of the ATLAS ITk outer pixel layers (1.5 × 1015 neq /cm2 ), and allows to achieve a high signal-to-noise ratio and fast signal response, as required by the HL-LHC 25 ns bunch crossing structure. The radiation hardness of the charge collection to Non-Ionizing Energy Loss (NIEL) has been previ…
On the design of a multiple-output DC/DC converter for the PHI experiment on-board of solar orbiter
2013
Power converters for experiments that have to fly on board space missions (satellite, launchers, etc.) have very stringent requirements due to its use in a very harsh environment. The selection of a suitable topology is therefore not only based on standard requirements but additional more strict ones have also to be fulfilled. This work shows the design procedure followed to build the Power Converter Module (PCM) for the Polarimetric and Helioseismic Imager (SO/PHI), experiment on board the Solar Orbiter Satellite. The selected topology has been a Push-Pull, for a power level of approximately 35 W and with seven output voltages. Galvanic isolation is needed from primary to secondary, but no…