Search results for "Ce3+"
showing 5 items of 5 documents
EPR study of Ce3+ luminescent centers in the Y2SiO5 single crystalline films
2017
Abstract The work reports results of EPR investigation of the Ce3+ incorporation in the Y2SiO5 and (Y,La)2SiO5 single crystalline films (SCFs), grown by liquid phase epitaxy method. The Ce3+ content determined from EPR spectra varied between 0.49 and 0.65 at. % in Y2SiO5 SCFs and strongly increased up to 1.9 at. % in (Y,La)2SiO5 SCF, suggesting a positive role of the La dopant in the incorporation of the Ce3+ ions into Y2SiO5 host. The EPR study showed the presence of only one type of Ce3+ centers (Ce1) corresponding to the localization of Ce3+ ions in the seven–fold coordinated positions of the Y2SiO5 host. No Ce2 center spectra (six-fold coordinated Ce3+ positions) were detected in films …
Effect of Ga content on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals
2018
The work was supported by the Institutional Research Funding IUT02-26 of the Estonian Ministry of Education and Research and the project 16-15569S of the Czech Science Foundation.
Luminescence and vacuum ultraviolet excitation spectroscopy of cerium doped Gd3Ga3Al2O12 single crystalline scintillators under synchrotron radiation…
2020
Authors gratefully acknowledge the financial support from the Latvian Science Council grant LZP-2018/2-0358 . The research leading to this result has been supported by the project CALIPSO plus under the Grant Agreement 730872 from the EU Framework Programme for Research and Innovation HORIZON2020 . The work of A.P.K. was supported by the Ministry of Science and Higher Education of the Russian Federation , state contracts No. 11.6181.2017/ITR .
Urea Glass Route as a Way to Optimize YAGG:Ce3+,Cr3+,Pr3+ Nanocrystals for Persistent Luminescence Applications
2022
A new approach for the synthesis of Y3Al2Ga3O12 (YAGG) nanophosphors allowing the preparation of crystallites with sizes starting from 45 nm is presented. The controllability of the energy and trap density of the resulting material samples by annealing temperature was confirmed by thermoluminescence (TL) measurements. It has been shown that the annealing of samples at temperatures up to 1300 degrees C does not cause any substantial growth of crystallites, still remaining below 100 nm, but leads to changes in the activation energy of the persistent luminescence (PersL) process. On the other hand, annealing above 1400 degrees C results in grain growth on the submicron scale, which was confirm…
Effect of Mg 2+ ions co-doping on luminescence and defects formation processes in Gd 3 (Ga,Al) 5 O 12 :Ce single crystals
2017
The work was supported by the Institutional Research Funding IUT02-26 of the Estonian Ministry of Education and Research and the project 16-15569S of the Czech Science Foundation.