Search results for "Chalcopyrite"
showing 10 items of 10 documents
Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure
2014
In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa2S4) at high pressures. This compound belongs to the family of AB(2)X(4) ordered-vacancy compounds and exhibits a tetragonal defect chalcopyrite structure. X-ray diffraction measurements at room temperature have been performed under compression up to 15.1 GPa in a diamond anvil cell. Our measurements have been complemented and compared with ab initio total energy calculations. The axial compressibility and the equation of state of the low-pressure phase of HgGa2S4 have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The pres…
Local Bonding Influence on the Band Edge and Band Gap Formation in Quaternary Chalcopyrites
2017
Quaternary chalcopyrites have shown to exhibit tunable band gaps with changing anion composition. Inspired by these observations, the underlying structural and electronic considerations are investigated using a combination of experimentally obtained structural data, molecular orbital considerations, and density functional theory. Within the solid solution Cu2ZnGeS4-x Se x , the anion bond alteration parameter changes, showing larger bond lengths for metal-selenium than for metal-sulfur bonds. The changing bonding interaction directly influences the valence and conduction band edges, which result from antibonding Cu-anion and Ge-anion interactions, respectively. The knowledge of the underlyi…
Enhanced thermoelectric performance of chalcopyrite nanocomposite via co-milling of synthetic and natural minerals
2020
Chalcopyrite CuFeS2 was shown to be a promising thermoelectric material. Considering thermoelectric efficiency, its relatively high and temperature weakly dependent power factor, economic affordability and ecological benignity is counterbalanced by a high lattice thermal conductivity. Thus it is highly desirable to lower the thermal conductivity of chalcopyrite thermoelectric material without deterioration of other thermoelectric characteristics. In our study, we demonstrate that mechanosynthesis followed by appropriate sintering enables to prepare such nanostructured ceramics with a favourable thermoelectric response. Our study shows that mechanosynthesis is a low-cost technological route …
Sulfide mineral identification using laser-induced plasma spectroscopy
2003
Sulfide minerals in rock samples were identified with laser-induced plasma spectroscopy (LIPS) in the near vacuum ultraviolet spectral region. Reference spectra of pyrite, pyrrhotite, chalcopyrite, sphalerite, barite, calcite and dolomite were applied to classification of minerals in sulfur-bearing drill core samples. On the basis of the results mineral distributions in the sample were estimated. The potential of the LIPS method for in situ analysis is discussed.
HgGa2 Se4 under high pressure: An optical absorption study
2015
High-pressure optical absorption measurements have been performed in defect chalcopyrite HgGa2Se4 to investigate the influence of pressure on the bandgap energy and its relation with the pressure-induced order–disorder processes that occur in this ordered-vacancy compound. Two different experiments have been carried out in which the sample undergoes either a partial or a total pressure-induced disorder process at 15.4 and 30.8 GPa, respectively. It has been found that the direct bandgap energies of the recovered samples at 1 GPa were around 0.15 and 0.23 eV smaller than that of the original sample, respectively, and that both recovered samples have different pressure coefficients of the dir…
Structural and vibrational properties of CdAl2S4 under high pressure: Experimental and theoretical approach
2014
The behavior of defect chalcopyrite CdAl2S4 at high pressures and ambient temperature has been investigated in a joint experimental and theoretical study. High-pressure X-ray diffraction and Raman scattering measurements were complemented with theoretical ab initio calculations. The equation of state and pressure dependences of the structural parameters of CdAl2S4 were determined and compared to those of other AB(2)X(4) ordered-vacancy compounds. The pressure dependence of the Raman-active mode frequencies is reported, as well as the theoretical phonon dispersion curves and phonon density of states at 1 atm. Our measurements suggest that defect chalcopyrite CdAl2S4 undergoes a phase transit…
Pressure-induced band anticrossing in two adamantine ordered-vacancy compounds: CdGa2S4 and HgGa2S4
2021
Abstract This paper reports a joint experimental and theoretical study of the electronic band structure of two ordered-vacancy compounds with defect-chalcopyrite structure: CdGa2S4 and HgGa2S4. High-pressure optical-absorption experiments (up to around 17 GPa) combined with first-principles electronic band-structure calculations provide compelling evidence of strong nonlinear pressure dependence of the bandgap in both compounds. The nonlinear pressure dependence is well accounted for by the band anticrossing model that was previously established mostly for selenides with defect chalcopyrite structure. Therefore, our results on two sulfides with defect chalcopyrite structure under compressio…
Preparation and properties of radio-frequency-sputtered half-Heusler films for use in solar cells
2011
Abstract The class of half-Heusler compounds opens possibilities to find alternatives for II–VI or III–V compound semiconductors. We aim to find suitable substitutes for the cadmium sulphide buffer layer in chalcopyrite-based thin film solar cells, where the buffer layer is located between the p-type chalcopyrite absorber and an n-type transparent window layer. We report here the preparation of radio-frequency-sputtered lithium copper sulphide “LiCuS” and lithium zinc phosphide “LiZnP” films. The optical analysis of these films revealed band gaps between 1.8 and 2.5 eV, respectively. Chemical properties of the film surface and both interfaces between the film and a Cu ( In , Ga ) Se 2 layer…
Sulfide ore facies, fluid inclusion and sulfur isotope characteristics of the Tappehsorkh Zn-Pb ( ± Ag-Ba) deposit, South Esfahan, Iran
2020
International audience; The stratiform, stratabound Tappehsorkh Zn-Pb (± Ag-Ba) deposit, located in the southeastern part of the Malayer-Esfahan Metallogenic Belt of Iran, formed during Lower Cretaceous back-arc extension. Sulfide mi-neralization occurs within dolostone, black siltstone, and crystal lithic tuff and andesite associated with the Gushfil-Baghabrisham synsedimentary normal fault. Three sulfide ore facies (massive, bedded, and stockwork) occur in the deposit. Sulfide minerals are sphalerite, galena, tetrahedrite and pyrite with minor chalcopyrite and bornite, and gangue minerals are barite, dolomite and quartz. Sulfide mineralization textures are massive, replacement , vein-vein…
Structural and Electrochemical Analysis of CIGS: Cr Crystalline Nanopowders and Thin Films Deposited onto ITO Substrates
2021
A new approach for the synthesis of nanopowders and thin films of CuInGaSe2 (CIGS) chalcopyrite material doped with different amounts of Cr is presented. The chalcopyrite material CuInxGa1 − xSe2 was doped using Cr to form a new doped chalcopyrite with the structure CuInxCryGa1 − x − ySe2, where x = 0.4 and y = 0.0, 0.1, 0.2, or 0.3. The electrical properties of CuInx CryGa1 − x − ySe2 are highly dependent on the Cr content and results show these materials as promising dopants for the fabrication thin film solar cells. The CIGS nano-precursor powder was initially synthesized via an autoclave method, and then converted into thin films over transparent substrates. Both crystalline precursor p…