Search results for "Contact resistance"
showing 5 items of 15 documents
Impact of contact resistance on the electrical properties of MoS
2016
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, R C, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) a…
Organic Thin-Film Transistors with Enhanced Sensing Capabilities
2009
Organic thin-film transistors, used as sensing devices, have been attracting quite a considerable interest lately as they offer advantages such as multi parameter behaviour and possibility to be quite easily molecularly tuned for the detection of specific analytes. Here, a study on the dependences of the devices responses on important parameters such as the active layer thickness and its morphology as well as on the transistor channel length is presented. To introduce the least number of variables the system chosen for this study is quite a simple and well assessed one being based on a thiophene oligomer active layer exposed to 1-butanol vapours.
Superconducting tunneling spectroscopy on epitaxial UPd2Al3 thin films
1997
Abstract Results of superconducting tunneling spectroscopy experiments performed on two different types of thin film planar junctions of the heavy-fermion compound UPd 2 Al 3 are presented. Cross-type junctions consist of the heavy-fermion base electrode, an insulating layer of native surface oxide and a metal counter electrode (Au or Ag). The contact resistance was only weakly temperature dependent down to the superconducting transition. In the superconducting regime a strongly reduced zero bias conductivity indicated the junction being of the superconductor-insulator-normal metal type. The observed tunneling density of states is clearly due to the superconducting energy gap of UPd 2 Al 3 …
Time-dependent current-voltage characteristics of Al/p-CdTe/Pt x-ray detectors
2012
Current-voltage (I-V) characteristics of Schottky Al/p-CdTe/Pt detectors were investigated in dark and at different temperatures. CdTe detectors with Al rectifying contacts, very appealing for high resolution x-ray and gamma ray spectroscopy, suffer from bias-induced polarization phenomena which cause current increasing with the time and severe worsening of the spectroscopic performance. In this work, we studied the time-dependence of the I-V characteristics of the detectors, both in reverse and forward bias, taking into account the polarization effects. The I-V measurements, performed at different time intervals between the application of the bias voltage and the measurement of the current…
Fabrication of a Silicide Thermoelectric Module Employing Fractional Factorial Design Principles
2021
AbstractThermoelectric modules can be used in waste heat harvesting, sensing, and cooling applications. Here, we report on the fabrication and performance of a four-leg module based on abundant silicide materials. While previously optimized Mg2Si0.3Sn0.675Bi0.025 is used as the n-type leg, we employ a fractional factorial design based on the Taguchi methods mapping out a four-dimensional parameter space among Mnx-εMoεSi1.75−δGeδ higher manganese silicide compositions for the p-type material. The module is assembled using a scalable fabrication process, using a Cu metallization layer and a Pb-based soldering paste. The maximum power output density of 53 μW cm–2 is achieved at a hot-side temp…