Search results for "Crystallographic defect"
showing 10 items of 182 documents
LCAO calculation of neutral defects in GaN
2005
Four well known HF, LDA, GGA and B3LYP Hamiltonians in LCAO approximation have been used in band structure calculations to obtain the main properties of the perfect GaN crystal with hexagonal lattice (C space group). Calculated lattice parameters, elastic constants and the band gap have been compared with the experimental data and the results of other calculations. As a consequence, the GGA Hamiltonian has been chosen, giving the lattice parameters a = 3.20 A, c = 5.20 A, u = 0.377, the bulk modulus B = 206 GPa and the energy gap Eg = 2.7 eV. These results reasonably reproduce the experimental data. For the point defects calculation (VGa, VN, MgGa, ZnGa, CN, and SiN) the supercell model was…
Calculations of radiation-induced point defects, polarons and excitons in ferroelectric perovskites
2002
Abstract We review results of our recent large-scale computer simulations of radiation-induced point defects, excitons and polarons in ABO3 perovskite crystals, focusing mostly on KNbO3 and KTaO3 as representative examples. We have calculated the atomic and electronic structure of defects, their optical absorption, defect-induced electron density redistribution, and activation energies for defect migration. The majority of our results were obtained using the quantum-chemical method of the intermediate neglect of differential overlap (INDO) based on the Hartree–Fock formalism, as well as the shell model (SM). The main findings are compared with those obtained by means of ab initio density fu…
Large scale computer modelling of point defects in ABO 3 perovskites
2005
We present results for basic intrinsic defects: F-type electron centers, free and bound electron and hole polarons in ABO3 perovskites. Both one-site (atomic) and two-site (molecular) hole polarons are expected to coexist, characterized by close absorption energies. Shell Model (SM) and intermediate neglect of differential overlap (INDO) calculations of the F center diffusion indicate that the relevant activation energy is quite low, ca. 0.8 eV. Further INDO calculations support the existence of self-trapped electron polarons in PbTiO3, BaTiO3, KNbO3, and KTaO3 crystals. The relevant lattice relaxation energies are typically 0.2 eV, whereas the optical absorption energies are around 0.8 eV.…
Computer modelling of radiation damage in cation sublattice of corundum
1998
Results of quantum chemical computer simulations of close Frenkel defects in corundum crystals are presented and discussed. The conclusion is drawn that the energy barrier for a back recombination up to fourth nearest neighbours is less than 0.3 eV, i.e. such pairs should be unstable at temperatures above 40 K.
Regular Horizontal Patterning on Colloidal Crystals Produced by Vertical Deposition
2009
Colloidal particles have proved to be a suitable precursor to the formation of nanoscaled materials. More explicitly, they are a suitable way to create photonic band gap materials in 3D. Several methods have been developed to assemble colloidal multilayer systems, and have yielded various levels of success. The vertical deposition method has shown itself to be one of the best in terms of time, control of the final product, crystal size and homogeneity. Despite this, the resulting crystals often present point defects, dislocations, cracks and polycrystallinity, as well as a horizontal modulation of film thickness. These defects compromise the possible utilities of the crystals. The study of …
Ab initiocalculations of theHcenters in MgF2crystals
2012
MgF2 with rutile structure is important wide-gap optical material with numerous applications. We present and discuss the results of calculations for basic hole defects - interstitial F atoms (called also the colour H centres). This study is based on the large scale ab initio DFT calculations using hybrid B3PW exchange-correlation functional as implemented into CRYSTAL computer code. The electronic structure, atomic geometry, charge density distribution are calculated and discussed.
First‐principles modeling of the H color centers in MgF 2 crystals
2012
MgF2 with a rutile structure is important wide-gap optical material with numerous applications. We present and discuss the results of calculations for basic hole defects – interstitial F atoms (called also the colour H centers). This study is based on the large scale ab initio DFT calculations using hybrid B3PW exchange-correlation functional as implemented into CRYSTAL computer code. The electronic structure, atomic geometry, charge density distribution are calculated and compared with similar defects in CaF2 fluorite. It is shown that the H centers oriented nearly parallel to the (110) axis are energetically more favourable than those oriented along the (001) axis, in agreement with exper…
Average Structure vs. Real Structure: Molecular Dynamics Studies of Silica
2003
The microscopic structure of a crystal and thermal fluctuations of the atoms constituting the crystal are intimately connected with the macroscopic elastic properties including mechanical stability. In some cases, however, the picture is more complex than that which is drawn in text books on solid state physics. (i) The instantaneous microscopic structure can deviate in a non-Gaussian way from the average structure even when domain disorder and/or crystal defects are absent. Quasi harmonic approximations may then turn out to be meaningless. (ii) The crystal is subject to external pressures that are sufficiently large in order to render the definition of elastic constants non unique. These t…
Coin metal adsorption on defective MgO(001) surface: ab initio study
2005
First principles slab calculations have been performed for Ag and Cu adsorption on periodically distributed point defects (a single O2– or Mg2+ vacancy per 2×2 surface supercell) on the non-polar MgO(001) substrate. Using the procedure implemented in the CRYSTAL-03 code, both Fs and Vs centers were modeled by retaining in the vacancy the basis set of the missing O2– and Mg2+ ions, respectively, with the local relaxation of the nearest substrate ions. Adsorption of metal atom over the Fs center (2.4 eV vs. 2.1 eV per Cu and Ag adatoms, respectively) is much stronger as compared with regular O2− sites (0.6 eV vs. 0.4 eV, respectively). The Fs center donates a substantial charge towards Ag and…
An investigation of the spot profiles in transmission electron diffraction from Langmuir-Blodgett films of aliphatic chain compounds
1990
The profiles of the transmission diffraction spots from a Langmuir-Blodgett film of aliphatic chain compound are derived from three plausible models of molecular organisation : a polycrystalline phase with long-range orientational order; a paracrystal possessing a density of point defects which do not interrupt the lattice rows ; and a Nelson and Halperin hexatic smectic phase in the «Debye-Huckel» limit of weakly-interacting dislocations. The three resulting predictions are distinctly different. Experimental results are presented for the room-temperature diffraction patterns from Langmuir-Blodgett films of a lipid, DMPE, and the cadmium soap of a fatty acid, 22-tricosenoic. Only the Nelson…