Search results for "Crystallographic"
showing 10 items of 202 documents
Polyamorphic transformation induced by electron irradiation ina-SiO2glass
2009
We report a study by electron paramagnetic resonance of amorphous silicon dioxide $(a{\text{-SiO}}_{2})$ irradiated by 2.5 MeV electrons in the dose range from $1.2\ifmmode\times\else\texttimes\fi{}{10}^{3}$ to $5\ifmmode\times\else\texttimes\fi{}{10}^{6}\text{ }\text{kGy}$. By measuring the change in the splitting of the primary $^{29}\text{S}\text{i}$ hyperfine doublet of the ${E}_{\ensuremath{\gamma}}^{\ensuremath{'}}$ centers we evidenced an irradiation induced local (around the defects) densification of $a{\text{-SiO}}_{2}$. Our data show that the local degree of densification of the materials is significantly higher than that obtained by mean density measurements, suggesting that the …
Point Defects, Dielectric Relaxation and Conductivity in Ferroelectric Perovskites
2000
In all ferroelectric perovskites, intentionally introduced or “unwanted” point defects do play a role in the dielectric spectra and in the conductivity.
Irradiation temperature effects on the induced point defects in Ge-doped optical fibers
2017
We present an experimental investigation on the combined effects of temperature and irradiation on Ge-doped optical fibers. Our samples were X-ray (10 keV) irradiated up to 5 kGy with a dose rate of 50 Gy(SiO2)/s changing the irradiation temperature in the range 233-573 K. After irradiation we performed electron paramagnetic resonance (EPR) and confocal microscopy luminescence (CML) measurements. The recorded data prove the generation of different Ge related paramagnetic point defects and of a red emission, different from that of the Ge/Si Non-Bridging Oxygen Hole center. Furthermore, by comparing the behaviour of the EPR signal of the Ge(1) as a function of the irradiation temperature with…
Thermal stability and enhanced thermoelectric properties of the tetragonal tungsten bronzes Nb8-xW9+xO47 (0 <x <5)
2017
Thermoelectric materials are believed to play a fundamental role in the energy field over the next years thanks to their ability of directly converting heat into usable electric energy. To increase their integration in the commercial markets, improvements of the efficiencies are needed. At the same time, cheap and non-toxic materials are required along with easily upscalable production cycles. Compounds of the tetragonal tungsten bronze (TTB) series Nb8-xW9+xO47 fulfill all these requirements and are promising materials. Their adaptive structure ensures glass-like values of the thermal conductivity, and the substitution on the cation side allows a controlled manipulation of the electronic p…
Calculations of the Electronic and Atomic Structure and Diffusion of Point Defects in KNbO3 Perovskite Crystals and Relevant KTN Solid Solutions
2002
AbstractIn this paper we review our recent achievements in large scale computer simulations of point defects in advanced perovskite crystals. We have calculated the defect migration energies in the KNbO3 cubic phase using quantum chemical method of the Intermediate Neglect of Differential Overlap (INDO) and classical shell model (SM). The migration energies for the O vacancy obtained by means of these two quite different methods are reasonably close (0.68 eV and 0.79 eV, respectively) and also agree with the only experimental estimate available (ca. 1 eV). Atomic relaxations calculated by these two methods also agree quite well. We used INDO method for a large-scale modeling of the atomic a…
Resolving Point Defects in the Hydration Structure of Calcite (10.4) with Three-Dimensional Atomic Force Microscopy
2018
It seems natural to assume that defects at mineral surfaces critically influence interfacial processes such as the dissolution and growth of minerals in water. The experimental verification of this claim, however, is challenging and requires real-space methods with utmost spatial resolution, such as atomic force microscopy (AFM). While defects at mineral-water interfaces have been resolved in 2D AFM images before, the perturbation of the surrounding hydration structure has not yet been analyzed experimentally. In this Letter, we demonstrate that point defects on the most stable and naturally abundant calcite (10.4) surface can be resolved using high-resolution 3D AFM-even within the fifth h…
Vortex dynamics in Bi2Sr2CaCu2O8-thin films in the presence of columnar defects
1996
With heavy ion irradiation we create continous amorphous columnar defects in Bi2Sr2CaCu2O8-thin films. With regard to a reliable comparison of irradiation effects three of four identical striplines on the same samples were exposed to different irradiation procedures. We performed irradiations as well parallel as under different angles with respect to the film $$\vec c$$ -axis. Beside an enlarged normal state resistivity after irradiation the films suffer a Tc-reduction proportional to the volume of the damaged material. The activation energy ascertained from resistive transitions shows best enhancement for magnetic field values close to the matching field. Measurements of the transport crit…
Ab initiocalculations of theFcenters in MgF2bulk and on the (001) surface
2012
We present and discuss the results of atomic and electronic structure calculations of the F centers in MgF2 bulk and on the (001) surface. The calculations are based on the B3PW Hartree–Fock and density functional theory hybrid exchange-correlation functional. Most of the electronic density of a missing fluorine ion is localized in the bulk vacancy and a little bit less—in a surface vacancy. It is shown that the electronic F center is a deep donor. The lattice distortion and defect formation energy on the neutral (001) surface and in the bulk are also compared.
Permanent photodoping of plasmonic gallium-ZnO nanocrystals
2020
This work was supported by the Latvian Council of Science in the framework of FLPP (Plasmonic oxide quantum dots for energy saving smart windows, lzp-2018/1-0187). Tanel Käämbre acknowledges financial support for the XPS instrumentation maintenance from the Estonian Centre of Excellence in Research project “Advanced materials and high- technology devices for sustainable energetics, sensorics and nanoelectronics” (TK141).
Hydrogen- and helium-implanted silicon: Low-temperature positron-lifetime studies
1991
High-purity single-crystal samples of float-zoned Si have been implanted with 6.95-MeV protons and with 25-MeV {sup 3}He{sup 2} ions at 15 K, and the positron-lifetime technique has been used to identify the defects created in the samples, and to study the effects of H and He on the annealing of point defects in Si. The results have been compared with those of proton-irradiated Si. A 100--300-K annealing stage was clearly observed in hydrogen (H{sup +}) -implanted Si, and this stage was almost identical to that in the {ital p}-irradiated Si. The final annealing state of the H{sup +}-implanted Si started at about 400 K, and it is connected to annealing out of negatively charged divacancy-oxy…