Search results for "Czochralski"
showing 4 items of 4 documents
Design of parallel compensator and stabilizing controller to mitigate non-minimum phase behaviour of the Czochralski Process
2020
Abstract This paper addresses the design of a parallel compensator and a stabilizing controller for the simplified crystal growth dynamics of the Czochralski (CZ) process, i.e., the process for the production of monocrystalline silicon ingots of uniform diameter. The diameter control of the produced ingots is achieved by a CCD camera measurement used to sense the radius of the boundary between the base of the growing crystal and the surrounding glowing meniscus — a raised melt surface connecting the crystal ingot with the flatter melt surface. Due to the intrinsic nature of the process, the bright ring radius measurement signal exhibits a non-minimum phase behaviour. A combination of the pa…
Magnetic properties of the TbMn2 single crystals
1999
Abstract Single crystals of TbMn 2 were grown by the Czochralski method from a levitated melt. Results of electrical resistivity, magnetization in strong magnetic fields along the principal crystallographic directions, AC and DC magnetic susceptibility and the temperature dependence of the lattice parameter are presented.
Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal
2021
Prediction and adjustment of point defect (vacancies and self-interstitials) distribution in silicon crystals is of utmost importance for microelectronic applications. The simulation of growth processes is widely applied for process development and quite a few different sets of point defect parameters have been proposed. In this paper the transient temperature, thermal stress and point defect distributions are simulated for 300 mm Czochralski growth of the whole crystal including cone and cylindrical growth phases. Simulations with 12 different published point defect parameter sets are compared to the experimentally measured interstitial–vacancy boundary. The results are evaluated for stand…
Numerical study of silicon crystal ridge growth
2014
Abstract The size of the ridge-like protrusions appearing on the external surface of dislocation-free 〈 100 〉 silicon crystals grown from a melt was studied theoretically. According to existing models the growth of the ridges is caused by the presence of { 111 } crystal planes at the crystal–melt interface. They affect the height of triple phase line, free surface orientation and the crystal growth angle. A numerical 2-dimensional model was proposed for the calculation of the size of the crystal ridges. The model included the effect of the undercooling of the crystal–melt interface on the crystal growth angle. The numerical model estimated the effect of the ridge size on the free surface at…