Search results for "Depletion"
showing 10 items of 115 documents
The Human Leukocyte Antigen-DPB1 Degree of Compatibility Is Determined by Its Expression Level and Mismatch Permissiveness: A German Multicenter Anal…
2021
T-cell epitope matching according to the TCE3 algorithm classifies HLA-DPB1 mismatches in permissive and non-permissive. This classification has been shown to be predictive for mortality and acute GvHD (aGvHD) events in large international cohorts. We retrospectively genotyped HLA-DPB1 in 3523 patients transplanted in Germany between 2000 and 2014 and in their unrelated donors using an Illumina amplicon-NGS based assay. Aim of the study was to evaluate DP-compatibility beyond the established TCE3 algorithm by assessing the combined effect of several DP-mismatch parameters on post-transplant outcome. We implemented an extended DP-mismatch assessment model where TCE3, DP allotype expression w…
Ex vivo T-cell depletion vs post-transplant cyclophosphamide, sirolimus, and mycophenolate mofetil as graft-vs-host disease prophylaxis for allogenei…
2021
Objective To compare the efficacy and safety of CD34+ selected ex vivo T-cell depletion (TCD) vs post-transplant cyclophosphamide, sirolimus, and mycophenolate mofetil (PTCy-Sir-MMF) as graft-vs-host disease (GVHD) prophylaxis. Methods We retrospectively included patients who underwent allogeneic hematopoietic stem cell transplantation (allo-HSCT) with either TCD (n = 38) or PTCy-Sir-MMF (n = 91). Results Cumulative incidence of neutrophil and platelet recovery was 92% vs 99% (P = .06) and 89% vs 97% (P = .3) in TCD and PTCy-Sir-MMF, respectively. Cumulative incidences of aGHVD grade II-IV, III-IV, and moderate to severe cGVHD were 11% vs 19% (P = .2), 3% vs 2% (P = .9), and 3% vs 36% (P < …
Enhancement of the sub-band-gap photoconductivity in ZnO nanowires through surface functionalization with carbon nanodots
2018
We report on the surface functionalization of ZnO nanowire (NW) arrays by attachment of carbon nanodots (C-dots) stabilized by polyethylenimine. The photoconductive properties of the ZnO NWs/C-dots devices were investigated under photoexcitation with photon energies below and above the ZnO band gap. The results indicate an increased photoresponse of the functionalized devices in the visible spectral range, as well as enhanced UV photoconductivity. This is attributed to the fast injection of photoexcited electrons from the C-dots into the conduction band of the ZnO NWs, and the subsequent slower desorption of molecular species from the NW surface, which reduces the surface depletion region i…
Assessment on the use of the amorphous semiconductor theory for the analysis of oxide films
2015
Abstract Although the theory of Schottky barrier in amorphous semiconductors is generally accepted, the limits of validity of such theory have not yet been explored. The classic semi-analytical solution is obtained under the constraint of constant electronic density of states (DOS) distribution in the mobility gap. In order to take into account the presence of a DOS variable in energy, a semi-empirical corrective power law was introduced in this paper. It is shown that the equations derived for thick films maintain their validity also in the case of thin films, provided that the space charge region width remains lower than 70% of the whole film thickness. A new expression based on the use o…
Dynamic response of thin-film semiconductors to AC voltage perturbations
2012
A theoretical treatment of a Schottky barrier dynamic response is developed on the basis of a general model of a semiconductor with thickness comparable in length to the space charge region width. It is shown that, when the space charge region approaches the metal/semiconductor interface, the electric field at this interface, induced by the charge accumulated on the metal, becomes significant with respect to the electric field induced by the charge accumulated on the semiconductor. Under this condition, the total capacitance of the Schottky barrier becomes independent of the polarization potential and tends to the value ε/L, like in a pure dielectric insulator. The term thin film is intende…
Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy
2016
Making use of Kelvin probe force microscopy, in dark and under ultraviolet illumination, we study the characteristics of p-n junctions formed along the axis of self-organized GaN nanowires (NWs). We map the contact potential difference of the single NW p-n junctions to locate the space charge region and directly measure the depletion width and the junction voltage. Simulations indicate a shrinkage of the built-in potential for NWs with small diameter due to surface band bending, in qualitative agreement with the measurements. The photovoltage of the NW/substrate contact is studied by analysing the response of NW segments with p- and n-type doping under illumination. Our results show that th…
Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current
2001
We have investigated the properties of soft breakdown (SBO) in thin oxide (4.5 nm) nMOSFETs with measurements of the gate and substrate leakage currents using the carrier separation technique. We have observed that, at lower gate voltages, the level of the substrate current exhibits a plateau. We propose that the observed plateau is due to the Shockley-Hall-Read (SHR) generation of hole-electron pairs in the space charge region and at the Si-SiO/sub 2/ interface. At higher voltages, the substrate current steeply increases with voltage, due to a tunneling mechanism, trap-assisted or due to a localized effective thinning of the oxide, from the substrate valence band to the gate conduction ban…
Influence of iron non-stoichiometry on spinel zinc ferrite gas sensing properties
2012
Abstract It is demonstrated for the first time that the gas sensing properties of a spinel ferrite complex metal oxide semiconductor can be improved by controlling iron stoichiometry. Conductivity and sensitivity was analyzed for ZnFe2+zO4± spinel type ferrite with z from −0.01 to 0.15. By increasing iron content from z = −0.01 to z = 0.1, sensitivity increases up to 3 times but for samples with z > 0.1 sensitivity drops. It was observed from impedance spectroscopy measurements that resistance decreases with an increase of the iron content. Complex impedance spectra reveal two phases with different resistance attributed to depletion layer (Rd) and bulk (Rb). With increasing iron content inc…
Origin of the substrate current after soft-breakdown in thin oxide n-MOSFETs
1999
In this paper is presented an experimental investigation on the origin of the substrate current after soft-breakdown in n-MOSFETs with 4.5 nm-thick oxide. At lower voltages this current shows a plateau that can be explained with the generation of hole-electron pairs in the space charge region and at the Si-SiO2 interface, and to carrier diffusion between the channel and the substrate. At higher voltages the substrate current steeply increases with voltage, due to trap-assisted tunneling from the substrate valence band to the gate conduction band, which becomes possible for gate voltages higher than the threshold voltage. Measurements on several devices at dark and in the presence of light, …
Band unpinning and photovoltaic model for P3HT:PCBM organic bulk heterojunctions under illumination
2008
Capacitance analysis of P3HT:PCBM bulk heterojunction solar cells, in dark and under illumination, shows a linear Mott-Schottky characteristic at moderate reverse bias, indicating p-doping of the organic blend. The flatband potential under illumination is displaced negatively about 0.6 V with respect to dark conditions. A basic photovoltaic model is developed to explain this, in terms of electron transfer via surface states at the metal/organic interface. Surface states with a slow exchange kinetics, become charged under illumination, unpinning the band and decreasing the depletion layer at the electron extraction contact. This becomes a major factor limiting the performance of bulk heteroj…