Search results for "Dop"
showing 10 items of 4870 documents
Temperature dependence of luminescence of LiF crystals doped with different metal oxides
2020
Photoluminescence and cathodoluminescence of LiF crystals doped with different binary metal oxides were measured in the wide temperature range of 50-300 K and time interval of 10−8−10−1 s after the nanosecond electron excitation pulse. Both as-grown those and crystals irradiated by an electron beam in range of absorbed dose up to 103 Gy were studied. It is shown that spectral-kinetic characteristics of the luminescence depend on the absorbed dose (type of created/accumulated color centers), the irradiation temperature, the concentration of hydroxyl, which promotes incorporation of the MeO complex (Me: W, Ti, Fe, Li) into the crystal lattice, and the cation-dopants.
Low-temperature luminescence of CdI2 under synchrotron radiation
2020
Synchrotron radiation is applied to study visible and UV luminescence spectra and their excitation spectra of undoped as well as In and Sb doped cadmium iodide crystals at 10 K. The origin of principal luminescence bands and the role of impurities in the formation of emission centers are discussed. The luminescence properties have been explained based on the electronic structure of CdI2 crystals.
Ab initio calculations of the electronic structure for Mn2+-doped YAlO3 crystals
2020
The electronic structure of Mn2+ ion substituted for the host Y atom in orthorhombic bulk YAlO3 crystals has been calculated by means of hybrid exchange-correlation functional HSE within density functional theory. The supercell approach has been used to simulate in Pbnm YAlO3 crystal the point defects, Mn-dopant and compensated the F+ center (oxygen vacancy with one trapped electron), to make unit cell neutral. Large 2 × 2 × 2 supercells of 160 atoms allow us to simulate substitutional point defect with concentration of about 3%. Mn2+ ions substituting for host Y form covalent Mn–O bonds, in opposite to the mostly ionic Y–O bond. The F center inserted to compensate the Mn2+ dopant in YAlO3 …
Effect of Mn doping on the low-temperature synthesis of tricalcium phosphate (TCP) polymorphs
2019
Abstract Effect of Mn doping on the low-temperature synthesis of tricalcium phosphate (TCP) polymorphs was demonstrated in α- and β-TCP polymorphs prepared by wet precipitation method under identical conditions and annealed at 700 °C. Calcium phosphates with Mn doping level in the range from 1 to 5 mol% were studied and the formation of desired polymorph was controlled by varying Mn content in as-prepared precipitates. It was found that increasing Mn content resulted in the formation of β-TCP, while α-TCP was obtained with low Mn doping level, whereas a mixture of two polymorphs was obtained for intermediate Mn concentrations. Moreover, doping with Mn ions allowed the synthesis of β-TCP at …
X-ray and dielectric characterization of Co doped tetragonal BaTiO3 ceramics
2016
ABSTRACTThe crystal structure modifications of BaTiO3 induced by cobalt doping were studied. The polycrystalline (1 − x)BaTiO3 + xCo2O3 samples, with x ≤ 10 wt.%, were prepared by high temperature sintering conventional method. According to X-ray phase and structural characterization, performed by full-profile Rietveld refinement technique, all synthesized samples showed tetragonal symmetry perovskite structure with minor amount of parasitic phases. Pure single-phase composition has been detected only in the low level of doping BaTiO3. It was indicated that substitution of Co for the Ti sites in the (1 − x)BaTiO3 + xCo2O3 series led to decrease of tetragonality (c/a) of the BaTiO3 perovskit…
Reduced temperature sensitivity of multicrystalline silicon solar cells with low ingot resistivity
2016
This study presents experimental data on the reduction of temperature sensitivity of multicrystalline silicon solar cells made from low resistivity ingot. The temperature coefficients of solar cells produced from different ingot resistivities are compared, and the advantages of increasing the net doping are explained.
Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations
2016
Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…
Emerging blue-UV luminescence in cerium doped YAG nanocrystals
2016
Physica status solidi / Rapid research letters 10(6), 475 - 479(2016). doi:10.1002/pssr.201600041
Guiding and splitting Lamb waves in coupled-resonator elastic waveguides
2018
Abstract We investigate experimentally Lamb wave propagation in coupled-resonator elastic waveguides (CREWs) formed by a chain of cavities in a two-dimensional phononic crystal slab with cross holes. Wide complete bandgaps, extending from 53 to 88 kHz, are first measured in a finite phononic crystal slab sample. A straight waveguide and a wave splitting circuit with 90° bends are then designed, fabricated and measured. Elastic Lamb waves are excited by a piezoelectric patch attached to one side of the phononic slab and detected using a scanning vibrometer. Strongly confined guiding and splitting at waveguide junctions are clearly observed for several guided waves. Numerical simulations are …
Spectroscopic study of ion temperature in minimum-B ECRIS plasma
2019
Experimentally determined ion temperatures of different charge states and elements in minimum-B confined electron cyclotron resonance ion source (ECRIS) plasma are reported. It is demonstrated with optical emission spectroscopy, complemented by the energy spread measurements of the extracted ion beams, that the ion temperature in the JYFL 14 GHz ECRIS is 5–28 eV depending on the plasma species and charge state. The reported ion temperatures are an order of magnitude higher than previously deduced from indirect diagnostics and used in simulations, but agree with those reported for a quadrupole mirror fusion experiment. The diagnostics setup and data interpretation are discussed in detail to …