Search results for "Dopant"

showing 2 items of 162 documents

Stability, electronic structure, and optical properties of protected gold-doped silver Ag29−xAux (x = 0–5) nanoclusters

2017

In this work, we used density functional theory (DFT) and linear response time-dependent DFT (LR-TDDFT) to investigate the stability, electronic structure, and optical properties of Au-doped [Ag29-xAux(BDT)12(TPP)4]3- nanoclusters (BDT: 1,3-benzenedithiol; TPP triphenylphosphine) with x = 0-5. The aim of this work is to shed light on the most favorable doped structures by comparing our results with previously published experimental data. The calculated relative energies, ranging between 0.8 and 10 meV per atom, indicate that several doped Ag29-xAux nanoclusters are likely to co-exist at room temperature. However, only the Au-doped [Ag29-xAux(BDT)12(TPP)4]3- nanoclusters that have direct bon…

optical propertieslinear response timedependent DFTMaterials scienceGeneral Physics and AstronomyNanotechnology02 engineering and technologyElectronic structureDirect bonding010402 general chemistry01 natural sciencesNanoclustersAtomAu-doped nanoclustersMoleculemoleculessilverstability (physical qualities)Physical and Theoretical Chemistryta116density functional theoryta114DopantDopingelectronic structure021001 nanoscience & nanotechnology0104 chemical sciencesPhysical chemistryDensity functional theory0210 nano-technologyPhysical Chemistry Chemical Physics
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Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC)

2022

This paper reports on the effects of excimer laser irradiation on an aluminum (Al)-doped silicon carbide (4H-SiC) layer. Specifically, high-concentration (1 × 1020at/cm3) Al-implanted 4H-SiC samples were exposed to a few pulses of 308 nm laser radiation (pulse duration of 160 ns), with fluence varying from 1.0 to 2.8 J/cm2. As a starting point, the laser-induced modifications of the morphological, microstructural, and nanoelectrical properties of the exposed 4H-SiC surface were monitored by combining different techniques. From these investigations, an evolution of the surface morphology was observed that can be ascribed to a conversion during irradiation of the uppermost part of the 4H-SiC …

silicon carbide (4H-SiC)dopant activationSettore FIS/01 - Fisica Sperimentalelaser annealingAl-implantation
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