Search results for "EFF"
showing 10 items of 13980 documents
Hole localization in thermoelectric half-Heusler (Zr0.5Hf0.5)Co(Sb1−xSn ) thin films
2019
Abstract The (Ti, Zr, Hf)Co(Sb 1 − x Snx) material class has recently come into focus as an attractive p-type high-temperature thermoelectric material. This study experimentally demonstrates that homogeneous, highly textured (Zr0.5Hf0.5)Co(Sb 1 − x Snx) thin films can be grown on single crystalline MgO. By varying the sputter power, samples with both positive and negative Seebeck coefficient can be grown. The underlying reason for the sign change is the segregation of Sn nano-inclusions, which lower the effective doping of the half-Heusler matrix. Similarly the Hall constant also switches sign at low temperatures, which is modeled assuming semi-metal behavior and low temperature hole locali…
Half-Heusler materials as model systems for phase-separated thermoelectrics
2015
Semiconducting half-Heusler compounds based on NiSn and CoSb have attracted attention because of their good performance as thermoelectric materials. Nanostructuring of the materials was experimentally established through phase separation in (T1−x′Tx″)T(M1−yMy′) alloys when mixing different transition metals (T, T′, T″) or main group elements (M, M′). The electric transport properties of such alloys depend not only on their micro- or nanostructure but also on the atomic-scale electronic structure. In the present work, the influence of the band structure and density of states on the electronic transport and thermoelectric properties is investigated in detail for the constituents of phase-sepa…
Impact of Annealing Temperature on Tunneling Magnetoresistance Multilayer Stacks
2020
The effect of annealing temperatures on the tunnel magnetoresistance (TMR) of MgO-based magnetic tunnel junctions (MTJs) has been investigated for annealing between 190 and 370°C. The TMR shows a maximum value of 215% at an annealing temperature of 330°C. A strong sensitivity of the TMR and the exchange bias of the pinned ferromagnetic layers on the annealing temperature are observed. Depending on sensor application requirements, the MTJ can be optimized either for stability and pinning strength or for a high TMR signal by choosing the appropriate annealing temperature. The switching mechanism of the ferromagnetic layers in the MTJ and the influence of the annealing on the layer properties,…
Photoelectron Emission from Metal Surfaces Induced by VUV-emission of Filament Driven Hydrogen Arc Discharge Plasma
2015
Photoelectron emission measurements have been performed using a filament-driven multi-cusp arc discharge volume production H^- ion source (LIISA). It has been found that photoelectron currents obtained with Al, Cu, Mo, Ta and stainless steel (SAE 304) are on the same order of magnitude. The photoelectron currents depend linearly on the discharge power. It is shown experimentally that photoelectron emission is significant only in the short wavelength range of hydrogen spectrum due to the energy dependence of the quantum efficiency. It is estimated from the measured data that the maximum photoelectron flux from plasma chamber walls is on the order of 1 A per kW of discharge power.
Magneto-optical properties of two-layer film systems based on Fe and Cr
2020
The results of the investigation of two-layer Fe/Cr systems using the magneto-optical Kerr effect (MOKE) are presented in this paper. The samples were obtained by thermal evaporation in a vacuum with a thickness of individual layers from 2 nm to 50 nm. It was found that the presence of the Cr layer significantly affects the values of the coercivity and the Kerr angle. At a substrate temperature of 450 K, the value of the coercivity is almost half that of the same sample obtained at room temperature of the substrate. In addition, the influence of the order of deposition of layers, as well as the effect of a thin gold protective layer on the parameters measured by the Kerr method, is shown. …
Performance evaluation and stability of silicide-based thermoelectric modules
2020
Abstract Long-term studies on thermoelectric generators based on N-type magnesium silicide (Mg2.01Si0.49Sn0.5Sb0.01) and P-type higher manganese silicide (Mn0.98Mo0.02Si1.73Ge0.02) materials are presented, in the operating temperature range of 200 °C–400 °C. Emphasis is put on the performance and reliability of the current collector configuration, especially on the hot side of the module, and on the thermomechanical stresses that are created during operation and lifetime testing as a result of large temperature gradients experienced across the thermoelectric legs. With silver (Ag) paste as contact material, the long term-stability of the uni-couples was carried out on non-metalized legs and…
Spin–orbit torque driven multi-level switching in He + irradiated W–CoFeB–MgO Hall bars with perpendicular anisotropy
2020
We have investigated the spin–orbit torque-driven magnetization switching in W/CoFeB/MgO Hall bars with perpendicular magnetic anisotropy. He+ ion irradiation through a mask has been used to reduce locally the effective perpendicular anisotropy at a Hall cross. Anomalous Hall effect measurements combined with Kerr microscopy indicate that the switching process is dominated by domain wall (DW) nucleation in the irradiated region followed by rapid domain propagation at a current density as low as 0.8 MA/cm2 with an assisting in-plane magnetic field. Thanks to the implemented strong pinning of the DW at the transition between the irradiated and the non-irradiated region, an intermediate Hall r…
The interdependence of structural and electrical properties in TiO2/TiO/Ti periodic multilayers
2013
International audience; Multilayered structures with 14-50 nm periods composed of titanium and two different titanium oxides, TiO and TiO2, were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. The structure and composition of these periodic TiO2/TiO/Ti stacks were investigated by X-ray diffraction and transmission electronic microscopy techniques. Two crystalline phases, hexagonal close packed Ti and face centred cubic TiO, were identified in the metallic-rich sub-layers, whereas the oxygen-rich ones comprised a mixture of amorphous TiO2 and rutile phase. DC electrical resistivity rho measured for temperatures ranging from 300 to 500 K exhibited a meta…
Fabrication and characterization of low cost Cu 2 O/ZnO:Al solar cells for sustainable photovoltaics with earth abundant materials
2016
Abstract The low cost electrodeposition method was used to grow Cu2O thin films and experimentally determine the optimal absorber layer thickness. Raman scattering studies indicate the presence of solely crystalline Cu2O and SEM images show that the thin films consist of grains with a pyramidal shape. The influence of the thickness of the light absorbing Cu2O layer on the basic characteristic of the heterojunction and their properties have been investigated using reflectivity, current–voltage (J–V), capacitance–voltage (C–V) and the external quantum efficiency (EQE) measurements. The depletion layer, the charge collection length of the minority carrier, and reflectivity are the main factors…
Temperature Dependent Suns-V<inf>oc</inf> of Multicrystalline Silicon Solar Cells from Different Ingot Positions
2018
This paper presents temperature dependent Suns- Voc measurements on multicrystalline silicon cells originating from different ingot positions. The effective lifetime is found to increase for all cells when the temperature is increased from 25°C to 6°C. However, cells from the top of the ingot show a considerably larger increas 40–50% for illumination conditions of 0.1-1 Sun, compared to an increase of 20-30% observed for cells from the bottom. The decrease in Voc with increasing temperature is found to be lower for cells from the top of the ingot compared to cells from the bottom. The temperature coefficient of the Voc is found to vary 5% along the ingot at 1 Sun, highlighting the influence…