Search results for "ELECTRONICS"
showing 10 items of 4340 documents
Photoelectrochemical study on anodic aluminum oxide films. Internal photoemission processes at the metal-oxide interface
1991
A photoelectrochemical investigation has been carried out on aluminum oxide films grown anodically at constant rate up to different thicknesses. Depending on the potential both anodic and cathodic photocurrents were observed at photon energies well below the optical bandgap expected for these layers. This finding is explained with the presence of internal photoinjection processes both for electrons and holes from the base metal into the oxide film. The analysis of the photocurrent spectra has given the threshold energies for both processes. The effect of the image force at the metal/oxide interface has been taken into account in order to derive the mobility gap of the films and the energeti…
Integration of a perovskite-based amplifier and photodetector system in rigid and solid substrates
2021
During the last years, organometallic lead halide perovskites (LHP) have been widely studied as outstanding materials for photovoltaics and photonics applications [1] . These emerging semiconductors are fabricated by cheap and straightforward solution process techniques on polycrystalline film of the compound CH 3 NH 3 PbX 3 (X=Cl, Br, I). Their outstanding properties of these films include large absorption coefficients above the bandgap, high electronic mobilities, high quantum yield of emission at room temperature or tunable band-gap with the composition [1] . In this work, we exploit the excellent light emitting and photodetection properties of CH 3 NH 3 PbI 3 thin films to integrate a w…
Initial Surface Film on Magnesium Metal. A Characterization by X-ray Photoelectron Spectroscopy (XPS) and Photocurrent Spectroscopy (PCS)
2007
Abstract A detailed investigation of the initial film grown on mechanically polished Mg electrodes has been carried out by ex situ X-ray Photoelectron Spectroscopy (XPS) and in situ Photocurrent Spectroscopy (PCS), allowing to reach a detailed picture of the passive layer structure. The XPS data show that the films formed soon after mechanical treatment and immersion in aqueous electrolyte have a bilayer structure, consisting of an ultra-thin MgO inner layer (∼2.5 nm) and a Mg(OH) 2 external layer. The thickness of the Mg(OH) 2 layer is a function of immersion time and solution temperature. After mechanical treatment and immersion in aqueous solution at room temperature, the MgO/Mg(OH) 2 la…
Trilateral π-conjugation extensions of phenothiazine-based dyes enhance the photovoltaic performance of the dye-sensitized solar cells
2016
Abstract Two novel organic dyes TLEP-1 and TLEP-2 based on phenothiazine with trilateral π-conjugation extensions were designed and synthesized for dye-sensitized solar cells, where phenothiazine ring was linked with two phenyl moieties at 7- and 10-positions as the first and second π-conjugation extensions, and with furan or thiophene ring at 3-position as the third π-conjugation extension for TLEP-1 and TLEP-2, respectively. The influence of the π-conjugation extensions on the photovoltaic performance was evaluated. The cell based on TLEP-2 exhibits an impressive short-circuit photocurrent density of 14.87 mA cm−2, which is much higher than the cell based on the reference dye without π-co…
Electron tunneling from colloidal CdSe quantum dots to ZnO nanowires studied by time-resolved luminescence and photoconductivity experiments
2015
CdSe quantum dots (QDs) with different organic linker molecules are attached to ZnO nanowires (NWs) to study the luminescence dynamics and the electron tunneling from the QDs to the nanowires in time-resolved photoluminescence (PL) and photoconductivity measurements. The PL transients of the QD luminescence indicate two different recombination channels: the direct recombination inside the QD core and the recombination via QD surface defect states. After linking the QDs to the ZnO NW surface, photo-induced electron tunneling from an excited state of the QD into the conduction band of the nanowire becomes visible by a clear decrease of the PL decay time. Efficient electron tunneling is confir…
Photoconductivity of Germanium Nanowire Arrays Incorporated in Anodic Aluminum Oxide
2007
Photoconductivity of germanium nanowire arrays of 50 and 100 nm diameter incorporated into Anodic Aluminum Oxide (AAO) membranes illuminated with visible light is investigated. Photocurrent response to excitation radiation with time constants faster than 10−4 s were governed by absorption of incident light by nanowires, while photokinetics with time constants of the order of 10−3 s originates from the photoluminescence of the AAO matrix. Possible applications of nanowire arrays inside AAO as photoresistors are discussed.
Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate
2013
We report on incorrect carrier type identification achieved by Hall effect measurements performed on ZnO films grown by pulsed laser deposition on InP substrates and subsequently annealed for 1 h at 600 C in air. While Hall measurements, after post-growth annealing, reveal a change in the electrical properties of the films, from n-type to p-type, both photocurrent-based and standard C V measurements performed on the same samples show no change in the native n-type doping of the ZnO films. A possible interpretation of the two results is reported. In particular, p-type conductivity observed by Hall effect may be ascribed to a highly conductive thin layer formed during the annealing process at…
Physicochemical Characterization of Passive Films and Corrosion Layers by Differential Admittance and Photocurrent Spectroscopy
2009
Two different electrochemical techniques, differential admittance and photocurrent spectroscopy, for the characterization of electronic and solid state properties of passive films and corrosion layers are described and critically evaluated. In order to get information on the electronic properties of passive film and corrosion layers as well as the necessary information to locate the characteristic energy levels of the passive film/electrolyte junction like: flat band potential (Ufb), conduction band edge (EC) or valence band edge (EV), a wide use of Mott-Schottky plots is usually reported in corrosion science and passivity studies. It has been shown, in several papers, that the use of simpl…
High-sensitive switchable photodetector based on BiFeO3 film with in-plane polarization
2015
A high-sensitive and fast-response photodetector based on BiFeO3 (BFO) ferroelectric thin film is fabricated using coplanar electrode configuration. A large photocurrent/dark current ratio is found up to two orders of magnitude at 1 V bias. Enhanced photocurrent and rectification behavior of the photodetector are observed after applying high voltage pulses to the BFO film. The short-circuit current varies systematically with the poling process and increases linearly with the light density. On the contrary, the open-circuit voltage keeps as a constant during the measurements. We attribute these behaviors to the depolarization field and the interfacial fields at the film-electrode interfaces.…
Amorphous semiconductor-electrolyte junctions. Photoelectrochemical behaviour of thin Nb2O5anodic films
1987
An approach to the study of the photocharacteristics of amorphous semiconductor/electrolyte junctions is proposed which takes into account the main differences in the electronic structure and the transport properties of the amorphous semiconductors (a-SC) with respect to the crystalline counterparts. The influence of the wavelength of the incident light on the photocurrent vs electrode potential curves is explained on the basis of the geminate recombination theory in a-SC. The implications of the model are shortly discussed.