Search results for "ELECTRONICS"
showing 10 items of 4340 documents
Novel Narrow-Band Spectral Interference Filter with Very High Transmittance
2011
We report a novel scheme to improve the effective transmission of a standard interference filter, and demonstrate over 97% passband transmission. Such high efficiency is critical for quantum information applications, e.g. high-efficiency single-photon generation utilizing parametric down-conversion. The scheme can also be modified to function with a tilted filter, thereby allowing tuning of the passband frequency. In addition, the tilted configuration creates an infinite number of consecutive reflections from and transmissions through the filter, further improving the net filter transmission. Because spectral interference filters are a key element in optical quantum information experiments …
A single photon source based on NV centers in diamond nanocrystals
2009
The development of reliable devices to generate single photons is crucial for applications in quantum cryptography, as well as for fundamental quantum optics experiments. Due to their extremely high photostability at room temperature, optically active defects in solids, the so called color centers, are among the most promising candidates. Single NV(nitrogen-vacancy) centers in diamond have been demonstrated to be able to generate single photons and have already shown advantages compared to attenuated laser pulses in a quantum cryptography experiment [1]. The nitrogen-vacancy center (NV center) in diamond consists of a substitutional nitrogen atom and an adjacent vacancy. This complex exhibi…
Laser induced thermal profiles in thermally and optically thin films
1988
The temperature field generated by the weak absorption of a gaussian laser beam in an optically and thermally thin film bounded by two transparent plates is discussed. An analytical solution of the problem is presented together with an algorithm for the numerical integration. The influence of the finite thermal conductivity of the plates is shown in an example.
Light transport in hetero-opal photonic crystals
2005
The effect of photonic bandgap interface upon the light scattering was studied in hetero-opals consisting of two opal thin films with different lattice constant. It is shown that the weak scattering regime is preserved in thin hetero-opal films. By comparing scattering spectra of single and hetero-opal films recorded under reversing angles of light incidence and detection it was demonstrated that the interface scatters stronger the light at oblique incident angles. Squeezing of the scattering diagram of hetero-opals compared to single opal films is also assigned to the interface scattering.
1.3 µm GaInNAs optically-pumped vertical cavity semiconductor optical amplifier
2003
A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed to be the first monolithic VCSOA operating at 1.3 mum. Under continuous-wave optical pumping in a singlemode fibre coupled format, gain figures of up to 17.7 dB were achieved. Amplification with 12 GHz bandwidth,was obtained at 12.8 dB peak gain.
Ultrafast Carrier Redistribution in Single InAs Quantum Dots Mediated by Wetting-Layer Dynamics
2019
Optical studies of single self-assembled semiconductor quantum dots (QDs) have been a topic of intensive investigation over the past two decades. Due to their solid-state nature, their electronic and optical emission properties are affected by the particular crystal structure as well as many-body-carrier interactions and dynamics. In this work, we use a master equation for microstates (MEM) model to study the carrier capture and escape from single QDs under optical nonresonant excitation and under the influence of a two-dimensional (2D) carrier reservoir (the wetting layer). This model reproduces carrier dynamics from power-dependent and time-resolved microphotoluminescence experiments . Du…
Complex quantum state generation and coherent control based on integrated frequency combs
2019
The investigation of integrated frequency comb sources characterized by equidistant spectral modes was initially driven by considerations towards classical applications, seeking a more practical and miniaturized way to generate stable broadband sources of light. Recently, in the context of scaling the complexity of optical quantum circuits, these on-chip approaches have provided a new framework to address the challenges associated with non-classical state generation and manipulation. For example, multi-photon and high-dimensional states were to date either inaccessible, lacked scalability, or were difficult to manipulate, requiring elaborate approaches. The emerging field of quantum frequen…
Generation and coherent manipulation of complex quantum states based on integrated frequency combs
2018
The investigation and use of integrated frequency comb sources (i.e. featured by equally-spaced discrete spectral modes) have recently provided a unique framework to address the challenges of generation and coherent manipulation of complex quantum states in on-chip devices. We exploit integrated frequency combs for generating entangled photon pairs, as well as multi-photon states, and high-dimensional (D-level, i.e. quDit) entangled photons. In particular, we manage to coherently manipulate such complex quantum systems by using telecommunications components (standard fiber telecom).
Fabrication of a planar micro Penning trap and numerical investigations of versatile ion positioning protocols
2009
We describe a versatile planar Penning trap structure, which allows one to dynamically modify the trapping configuration almost arbitrarily. The trap consists of 37 hexagonal electrodes, each with a circumcircle diameter of 300 μm, fabricated in a gold-on-sapphire lithographic technique. Every hexagon can be addressed individually, thus shaping the electric potential. The fabrication of such a device with clean room methods is demonstrated. We illustrate the variability of the device by a detailed numerical simulation of a lateral and a vertical transport and simulate trapping in racetrack and artificial crystal configurations. The trap may be used for ions or electrons, as a versatile cont…
Far-infrared laser on quantum dots created by electric-field focusing
2003
The new proposal of a far-infrared laser employing intraband transitions in the system of quantum dots is briefly described. The conditions for inversion of population for electrons in the quantum dot matrix created by an electric-field focusing in narrow GaAs/AlGaAs quantum well are discussed. The laser is planned to be pumped by periodically repeated rapid creation and destruction of the quantum dot matrix allowing for repeated filling of the dot levels with electrons from a quantum well. Some major results of the analysis of the kinetics of the electron-photon system are presented.