Search results for "ELETTROMAGNETICI"

showing 10 items of 158 documents

Analisi elettromagnetica di dispersori di terra di configurazione complessa sottoposti a corrente impulsiva. Caratterizzazione degli elettrodi e inte…

1994

Settore ING-IND/31 - ElettrotecnicaTransitori elettromagnetici impianti di terra comportamento impulsivo
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STUDI DI TRANSITORI ELETTROMECCANICI ED ELETTROMAGNETICI PER LINEE MISTE DI TRASMISSIONE AEREOCAVO

2011

Settore ING-IND/33 - Sistemi Elettrici Per L'EnergiaELETTROMECCANICITRASMISSIONETRANSITORIELETTROMAGNETICIAEREOCAVO
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Non-uniform doping concentration CIGS absorber profile for highefficiency solar cells

2016

The quaternary chalcopyrite semiconductor alloy Cu(In,Ga)Se2 (CIGS) is nowadays commonly considered one of the most suitable materials to fabricate cost-effective and high-efficiency photovoltaic cells. Thanks to the optical and structural properties of the absorber layer and to the tunable bandgap, thin-film CIGS cells have reached efficiencies around 20%, not far from the maximum values of traditional crystalline silicon cells. This high efficiency, together with the conceivable low fabrication costs, makes CIGS cells a promising alternative to silicon technology for large-scale production. In order to further improve the cells performance, in a previous work we have already proposed a si…

Settore ING-INF/02 - Campi ElettromagneticiCIGS simulations solar cell photovoltaicsSettore ING-INF/01 - Elettronica
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Correlated Channel Model for terrestrial Free Space Optics and project specifications evaluation of LT code in OOK modulation

2011

Free Space Optics is a wireless line-of-sight communication system able to offer good bandwidth performance as well as straightforward installation and relocation. So that it represents a modern technology that allow to realize large bandwidth communication particularly when it is not possible to employ physical cable or radio technologies. Examples of FSO applications are: wireless backaul, fiber backup, temporary links, metro network extension and last mile access[1]. FSO is based on optical signals propagation in air and that is why it suffers of impairments which depend on atmospheric conditions. In detail, FSO suffers of scattering (i. e. Rayleigh and Mie) losses, absorption and scinti…

Settore ING-INF/02 - Campi ElettromagneticiFree Space Optics FSO OOK LT code Luby Tranform Channel model correlation outage Gamma Gamma Rytov parameterSettore ING-INF/01 - Elettronica
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Telecom-compatible, affordable and scalable quantum technologies

2022

The realistic implementation of quantum architectures relies on the development of scalable, resource-efficient platforms that are compatible with CMOS technologies as well as fiber networks. This work demonstrates novel schemes utilized for time-/frequency-bin entanglement generation and processing by leveraging existing telecommunications and integrated photonics infrastructures.

Settore ING-INF/02 - Campi ElettromagneticiIntegrated quantum optics complex photon states quantum frequency combs silicon-based chips microring resonators spiral waveguides integrated Mach-Zehnder interferometers discrete time and frequency modes photonic qubits and qudits
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Backward second-harmonic generation of near infrared picosecond pulses

2014

We report on backward second-harmonic generation using picosecond laser pulses in congruent lithium niobate with 3.2 µm periodic poling. By tuning both the pump wavelength and the sample temperature, we observed three resonant peaks in the range 1530-1730 nm, corresponding to 16th, 17th and 18th quasi-phase-matching orders, respectively. A maximum conversion efficiency of 0.475% was achieved at the 16th order with a 10 kW peak pump power. The latter is the highest conversion reported in bulk to date, for the backward configuration, with an improvement greater than 50% with respect to those previously achieved with nanosecond pulses for the same order of resonance.

Settore ING-INF/02 - Campi ElettromagneticiNonlinear Optics Parametric Processes Harmonic Generation and Mixing Picosecond PhenomenaSettore ING-INF/01 - Elettronica
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Wideband THz time domain spectroscopy set-up based on ultrafast pulsed laser: model and experiments

2014

We present an analytical model describing the full electromagnetic propagation in a THz Time Domain Spectroscopy (THz-TDS) laser based system. We pay particular attention to the modelling of the time-frequency behavior of all the stages, which compose our experimental set-up. In particular, our model takes into account the following features: pump beam focusing into the generation crystal; phase-matching between pump and THz pulses inside both the generation and detection crystals; chromatic dispersion and absorption inside the materials; Fabry-Perot effect in both the crystals; diffraction along the propagation, focalization and overlapping between THz and probe beams; Electro-Optic Sampli…

Settore ING-INF/02 - Campi ElettromagneticiNonlinear Optics Terahertz Ultrafast PhotonicsSettore ING-INF/01 - Elettronica
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Backward Frequency Doubling in Periodically Poled Lithium Niobate in the Pulsed Regime

2011

Settore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - ElettronicaNonlinear Optics Backward Frequency Doubling Lithium Niobate
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Electro-Optical characterization of Silicon Carbide Schottky photodiodes

2014

Settore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - Elettronicasic schottky uv detector photodiode
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Signal to Noise Ratio of Silicon Photomultipliers: a study in the Continuous Wave Regime

2014

We report on Signal to Noise Ratio measurements carried out, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a novel class of silicon photomultipliers fabricated in planar technology on silicon p-type substrate. Signal to Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the same current. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal to Noise Ratio, as a function of the temperature …

Settore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - Elettronicasipm snr photomultiplier noise silicon
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