Search results for "EMR"
showing 10 items of 59 documents
Switching synchronization in one-dimensional memristive networks: An exact solution.
2017
We study a switching synchronization phenomenon taking place in one-dimensional memristive networks when the memristors switch from the high- to low-resistance state. It is assumed that the distributions of threshold voltages and switching rates of memristors are arbitrary. Using the Laplace transform, a set of nonlinear equations describing the memristors dynamics is solved exactly, without any approximations. The time dependencies of memristances are found, and it is shown that the voltage falls across memristors are proportional to their threshold voltages. A compact expression for the network switching time is derived.
Stability and Chaotic Attractors of Memristor-Based Circuit with a Line of Equilibria
2019
This report investigates the stability problem of memristive systems with a line of equilibria on the example of SBT memristor-based Wien-bridge circuit. For the considered system, conditions of local and global partial stability are obtained, and chaotic dynamics is studied. peerReviewed
Field- and irradiation-induced phenomena in memristive nanomaterials
2016
The breakthrough in electronics and information technology is anticipated by the development of emerging memory and logic devices, artificial neural networks and brain-inspired systems on the basis of memristive nano-materials represented, in a particular case, by a simple 'metal-insulator-metal' (MIM) thin-film structure. The present article is focused on the comparative analysis of MIM devices based on oxides with dominating ionic (ZrOx, HfOx) and covalent (SiOx, GeOx) bonding of various composition and geometry deposited by magnetron sputtering. The studied memristive devices demonstrate reproducible change in their resistance (resistive switching - RS) originated from the formation and …
Modeling Networks of Probabilistic Memristors in SPICE
2021
Efficient simulation of stochastic memristors and their networks requires novel modeling approaches. Utilizing a master equation to find occupation probabilities of network states is a recent major departure from typical memristor modeling [Chaos, solitons fractals 142, 110385 (2021)]. In the present article we show how to implement such master equations in SPICE – a general purpose circuit simulation program. In the case studies we simulate the dynamics of acdriven probabilistic binary and multi-state memristors, and dc-driven networks of probabilistic binary and multi-state memristors. Our SPICE results are in perfect agreement with known analytical solutions. Examples of LTspice code are…
Determination of organic pollutants in Anguilla anguilla by liquid chromatography coupled with tandem mass spectrometry (LC-MS/MS)
2021
© 2021 The Authors.
Fabrication and characterization of micrometer-scale ZnO memristors
2015
Memristors are an interesting class of resistive random access memory (RRAM) based on the electrical switching of metal oxide film resistivity . They are characterized for exhibiting resistive switching between a high-resistance state (HRS) and a low-resistance state (LRS) and have been recently considered as one of the most promising candidates for next-generation nonvolatile memory devices because of their low power consumption, fast switching operation, nondestructive readout, and remarkable scalability. The device structure is simply an oxide layer sandwiched between two metal electrodes. The switching behaviour is dependent both on the oxide material and the choice of metal electrodes.…
Resistive switching of anodic TiO2-based Memristors
2018
In recent years, memristors have attracted great attention owing to their simple fabrication process, high scalability, good compatibility with the CMOS technology, high switching speed, low power consumption and low cost for next-generation non-volatile memory technology [1]. The basic cell structure of a memristor is an insulator sandwiched between two metal electrodes. Among the materials being studied for memristors fabrication, binary metal oxides, such as TiO2, are most favourable because of their simple constituents, compatible with CMOS processes, and resistive to thermal/chemical damages. Anodizing is a an electrochemical low cost process carried out at room temperature to grow oxi…
Pulsed laser deposition of ZnO and VO2 films for memristor fabrication
2015
Memristors are resistive switching memory devices which have attracted much attention over the last years for high-density memory applications because of their simple structure, small cell size, high speed, low power consumption, potential for 3-D stacking and excellent compatibility with the complementary metal-oxide-semiconductor (CMOS) technology [1]. Beside nonvolatile memory applications, memristors have been also proposed for other different applications including biosensors [2] and neuromorphic [3] circuits. The device structure is simply an oxide material sandwiched between two metal electrodes. The switching behavior is not only dependent on the oxide material but also on the choic…
Noise-assisted persistence and recovery of memory state in a memristive spiking neuromorphic network
2021
Abstract We investigate the constructive role of an external noise signal, in the form of a low-rate Poisson sequence of pulses supplied to all inputs of a spiking neural network, consisting in maintaining for a long time or even recovering a memory trace (engram) of the image without its direct renewal (or rewriting). In particular, this unique dynamic property is demonstrated in a single-layer spiking neural network consisting of simple integrate-and-fire neurons and memristive synaptic weights. This is carried out by preserving and even fine-tuning the conductance values of memristors in terms of dynamic plasticity, specifically spike-timing-dependent plasticity-type, driven by overlappi…
Towards peptide-based tunable multistate memristive materials
2021
Development of new memristive hardware is a technological requirement towards widespread neuromorphic computing. Molecular spintronics seems to be a fertile field for the design and preparation of this hardware. Within molecular spintronics, recent results on metallopeptides demonstrating the interaction between paramagnetic ions and the chirality induced spin selectivity effect hold particular promise for developing fast (ns–μs) operation times. [R. Torres-Cavanillas et al., J. Am. Chem. Soc., 2020, DOI: 10.1021/jacs.0c07531]. Among the challenges in the field, a major highlight is the difficulty in modelling the spin dynamics in these complex systems, but at the same time the use of inexp…