Search results for "Electroabsorption"
showing 2 items of 2 documents
Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy
2001
Indium selenide thin films have been grown on p-type gallium selenide single crystal substrates by van der Waals epitaxy. The use of two crucibles in the growth process has resulted in indium selenide films with physical properties closer to these of bulk indium selenide than those prepared by other techniques. The optical properties of the films have been studied by electroabsorption measurements. The band gap and its temperature dependence are very close to those of indium selenide single crystals. The width of the fundamental transition, even if larger than that of the pure single crystal material, decreases monotonously with temperature. Exciton peaks are not observed even at low temper…
Integrated InGaAlAs/InP laser-modulator using an identical multiple quantum well active layer
2005
We present experimental results on 40 Gb/s large-signal modulation performance of 1.31 μm monolithic integrated laser-modulator in the InGaAlAs/InP material system, exploiting the gain and absorption properties of an identical multiple quantum well (MQW) active layer. In continuous wave operation, at 15◦ C, the devices achieved threshold currents < 28 mA, fiber coupled optical power levels up to +0.4 dBm. The measured small signal modulation bandwidth was about 32 GHz. An air-cavity based Fabry-Perot interferometer has been realized to characterize the spectral chirp of the integrated structures in the time domain up to 40 Gb/s.