Search results for "Energy"
showing 10 items of 30133 documents
Fabrication and characterization of low cost Cu 2 O/ZnO:Al solar cells for sustainable photovoltaics with earth abundant materials
2016
Abstract The low cost electrodeposition method was used to grow Cu2O thin films and experimentally determine the optimal absorber layer thickness. Raman scattering studies indicate the presence of solely crystalline Cu2O and SEM images show that the thin films consist of grains with a pyramidal shape. The influence of the thickness of the light absorbing Cu2O layer on the basic characteristic of the heterojunction and their properties have been investigated using reflectivity, current–voltage (J–V), capacitance–voltage (C–V) and the external quantum efficiency (EQE) measurements. The depletion layer, the charge collection length of the minority carrier, and reflectivity are the main factors…
Quartz resonators for penning traps toward mass spectrometry on the heaviest ions
2020
We report on cyclotron frequency measurements on trapped 206,207Pb+ ions by means of the non-destructive Fourier-transform ion-cyclotron-resonance technique at room temperature. In a proof-of-principle experiment using a quartz crystal instead of a coil as a resonator, we have alternately carried out cyclotron frequency measurements for 206Pb+ and 207Pb+ with the sideband coupling method to obtain 21 cyclotron-frequency ratios with a statistical uncertainty of 6 × 10−7. The mean frequency ratio R¯ deviates by about 2σ from the value deduced from the masses reported in the latest Atomic Mass Evaluation. We anticipate that this shift is due to the ion–ion interaction between the simultaneousl…
HCl gas gettering of low-cost silicon
2013
HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…
Temperature Dependent Suns-V<inf>oc</inf> of Multicrystalline Silicon Solar Cells from Different Ingot Positions
2018
This paper presents temperature dependent Suns- Voc measurements on multicrystalline silicon cells originating from different ingot positions. The effective lifetime is found to increase for all cells when the temperature is increased from 25°C to 6°C. However, cells from the top of the ingot show a considerably larger increas 40–50% for illumination conditions of 0.1-1 Sun, compared to an increase of 20-30% observed for cells from the bottom. The decrease in Voc with increasing temperature is found to be lower for cells from the top of the ingot compared to cells from the bottom. The temperature coefficient of the Voc is found to vary 5% along the ingot at 1 Sun, highlighting the influence…
Choice of the detectors for light impurities plasma studies at W7-X using ‘CO Monitor’ system
2019
Abstarct The ‘CO Monitor’ is a new spectrometer system dedicated for the continuous measurements of line intensities of carbon, oxygen, boron and nitrogen at the fusion plasma experiment Wendelstein 7-X (W7-X). Its main purpose is to deliver constant information about indicated elements with high time resolution (better than 1 ms), but low spatial resolution since the line shapes are not going to be investigated. The system consists of four independent channels, each equipped with dispersive element dedicated for measurement of selected line of interest. In order to perform the highest efficiency of the ‘CO Monitor’ system, it is essential to choose the proper detector type for this task. T…
Half-Heusler compounds: novel materials for energy and spintronic applications
2012
Half-Heusler compounds are an impressive class of materials with a huge potential for different applications such as future energy applications and for spintronics. The semiconducting Heusler compounds can be identified by the number of valence electrons. The band gap can be tuned between 0 and 4 eV by the electronegativity difference of the constituents. Magnetism can be introduced in these compounds by using rare-earth elements, manganese or ‘electron’ doping. Thus, there is a great interest in the fields of thermoelectrics, solar cells and diluted magnetic semiconductors. The combination of different properties such as superconductivity and topological edge states leads to new multifunct…
The role of seed electrons on the plasma breakdown and preglow of electron cyclotron resonance ion source
2009
The 14 GHz Electron Cyclotron Resonance Ion Source at University of Jyväskylä, Department of Physics (JYFL) has been operated in pulsed mode in order to study the plasma breakdown and preglow effect. It was observed that the plasma breakdown time and preglow characteristics are affected by seed electrons provided by a continuous low power microwave signal at secondary frequency. Sustaining low density plasma during the off-period of high power microwave pulses at the primary frequency shifts the charge state distribution of the preglow transient toward higher charge states. This could be exploited for applications requiring fast and efficient ionization of radioactive elements as proposed f…
Space Charges and Partial Discharges Simultaneous Measurements under DC Stress
2016
In the field of HVDC, the main causes of insulation aging are due to the space charge and PD phenomena. In particular, the purpose of the present work is to verify a possibility to measure simultaneously the space charge and the PDs under DC stress in order to evaluate the correlation between both phenomena. The space charge was measured by using a modified PEA cell and PDs were measured by using a novel wireless sensor system. The space charge profile and the PD pulses carried out simultaneously have been reported and discussed.
Deformation of bubbles in silicon gel insulation under an alternating electric field
2019
The behavior of silicone gel under electrical stress plays a significant role in the reliability and durability of high voltage electronic power devices due to its widespread use for the insulation of IGBT modules and other components. The charges accumulation at the bubble boundaries leads to significant displacements due to the establishment of Coulombic forces and the high deformability of colloidal system. The main purpose of this work is to validate a numerical approach useful to investigate, for a given silicone gel, the non-linear relation between the applied HVDC stress and the electric field over an air bubble within the insulation bulk. The analysis has been carried out by means o…
Spectroscopic study of ion temperature in minimum-B ECRIS plasma
2019
Experimentally determined ion temperatures of different charge states and elements in minimum-B confined electron cyclotron resonance ion source (ECRIS) plasma are reported. It is demonstrated with optical emission spectroscopy, complemented by the energy spread measurements of the extracted ion beams, that the ion temperature in the JYFL 14 GHz ECRIS is 5–28 eV depending on the plasma species and charge state. The reported ion temperatures are an order of magnitude higher than previously deduced from indirect diagnostics and used in simulations, but agree with those reported for a quadrupole mirror fusion experiment. The diagnostics setup and data interpretation are discussed in detail to …