Search results for "Exciton"
showing 10 items of 317 documents
Energy transfer in LH2 of Rhodospirillum Molischianum, studied by subpicosecond spectroscopy and configuration interaction exciton calculations.
2001
Two color transient absorption measurements were performed on a LH2 complex from Rhodospirillum molischianum by using several excitation wavelengths (790, 800, 810, and 830 nm) and probing in the spectral region from 790 to 870 nm at room temperature. The observed energy transfer time of ∼1.0 ps from B800 to B850 at room temperature is longer than the corresponding rates in Rhodopseudomonas acidophila and Rhodobacter sphaeroides. We observed variations (0.9-1.2 ps) of B800-850 energy transfer times at different B800 excitation wavelengths, the fastest time (0.9 ps) was obtained with 800 nm excitation. At 830 nm excitation the energy transfer to the B850 ring takes place within 0.5 ps. The m…
Photo-electrical and transport properties of hydrothermal ZnO
2016
We performed the studies of optical, photoelectric, and transport properties of a hydrothermal bulk n-type ZnO crystal by using the contactless optical techniques: photoluminescence, light-induced transient grating, and differential reflectivity. Optical studies revealed bound exciton and defect-related transitions between the donor states (at ∼60 meV and ∼240 meV below the conduction band) and the deep acceptor states (at 0.52 eV above the valence band). The acceptor state was ascribed to VZn, and its thermal activation energy of 0.43 eV was determined. A low value of carrier diffusion coefficient (∼0.1 cm2/s) at low excitations and temperatures up to 800 K was attributed to impact the rec…
Luminescence of divalent lanthanide doped BaBrI single crystal under synchrotron radiation excitations
2020
Abstract Luminescence excitation spectra of BaBrI single crystals doped by divalent lanthanide ions are studied using synchrotron radiation excitations from the MAX IV 1.5 GeV storage ring. The energy of the edge and the formation of core cation exciton as well as the energy threshold of the multiplications of electronic excitations is found. It was clearly established the energy transfer from intrinsic luminescence centers to Sm2+ and Eu2+ ions.
Structural, optical, and luminescence properties of ZnO:Ga optical scintillation ceramic
2018
This paper discusses the characteristics of ZnO and ZnO:Ga ceramics fabricated by uniaxial hot pressing. The short-wavelength transmission limit of zinc oxide ceramics is in the 370-nm region; the long-wavelength limit is determined by the free-charge-carrier concentration and lies in the interval from 5 to 9 μm. The total transmittance of such ceramics in the visible and near-IR regions is about 70% when the sample is 0.5 mm thick. The luminescence spectrum is represented by a broad emission band with maximum at 580 nm, having a defect nature. The introduction of 0.03–0.1 mass % gallium into the zinc oxide structure inhibits grain growth and increases the free-charge-carrier concentration …
Low-temperature luminescence of ScF3 single crystals under excitation by VUV synchrotron radiation
2020
The work was supported by the Latvian Science Council grant LZP-2018/2-0358. The research leading to this result has also been supported by the project CALIPSO plus under the Grant Agreement 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020. The author is grateful to K. Chernenko (MAX IV Laboratory, Lund University) for his assistance during beamtime experiments and to A. I. Popov for the fruitful discussions. V.P. also acknowledges Valsts pētījumu programma “Augstas enerģijas fizika un paātrinātāju tehnoloģijas” (Projekta Nr. VPP-IZM-CERN-2020/1-0002). REFERENCES
Low-temperature luminescence of catangasite single crystals under excitation by vacuum ultraviolet synchrotron radiation
2020
The luminescent properties of Ca3TaGa3Si2O14 (CTGS, catangasite) single crystals have been studied by means of the vacuum ultraviolet excitation spectroscopy utilizing synchrotron radiation from 1.5 GeV storage ring of MAX IV synchrotron facility. Two emission bands at 320 nm (3.87 eV) and 445 nm (2.78 eV) have been detected. Examining excitation spectra in vacuum ultraviolet spectral range, the 320 nm emission band was explained as the emission band of self-trapped exciton in CTGS single crystal. Its atomic structure is discussed. It is also proposed that the 445 nm (2.78 eV) emission in the CTGS is due to the F centers, which have shown a well-resolved excitation (absorption) band at 5.1 …
Stabilization of primary mobile radiation defects in MgF2 crystals
2016
Abstract Non-radiative decay of the electronic excitations (excitons) into point defects ( F – H pairs of Frenkel defects) is main radiation damage mechanism in many ionic (halide) solids. Typical time scale of the relaxation of the electronic excitation into a primary, short-lived defect pair is about 1–50 ps with the quantum yield up to 0.2–0.8. However, only a small fraction of these primary defects are spatially separated and survive after transformation into stable, long-lived defects. The survival probability (or stable defect accumulation efficiency) can differ by orders of magnitude, dependent on the material type; e.g. ∼10% in alkali halides with f.c.c. or b.c.c. structure, 0.1% in…
Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental an…
2020
We report defect-related photoluminescence (PL) and its vacuum ultraviolet photoluminescence excitation (PLE) spectra of aluminum nitride layers with various layer thicknesses and dislocation densities grown on two different substrates: sapphire and silicon. The defect-related transitions have been distinguished and examined in the emission and excitation spectra investigated under synchrotron radiation. The broad PL bands of two defect levels in the AlN were detected at around 3 eV and 4 eV. In the PLE spectra of these bands, a sharp excitonic peak originating most probably from the A-exciton of AlN was clearly visible. Taking into account the exciton binding energy, the measurements allow…
Magnetic properties of exciton trapped by an off-center ionized donor in single quantum dot
2021
Abstract It is known that the lines of exciton (X) and exciton trapped by an ionized donor ( D + , X ) are often very close which makes very difficult their experimental identification. In order to facilitate their distinction in spherical quantum dots, we investigate the effect of an applied magnetic field studying the binding energy of the complex ( D + , X ) as function of dot size and the ionized donor position. Our calculation is using a variational approach taking into account the interactions between all charge carriers. Our results show that the complex is more sensitive to the magnetic field than the exciton and that the energy of the exciton is not sufficiently affected when the i…
Analytic $JV$ -Characteristics of Ideal Intermediate Band Solar Cells and Solar Cells With Up and Downconverters
2017
The ideal diode equation is regularly used to describe the $\textit {JV}$ -characteristic of single junction solar cells. The connection between the diode equation and fundamental physics is the application of the Boltzmann approximation to describe the fluxes of photons emitted by the cell. In this paper, this approximation is used to derive analytic $\textit {JV}$ -characteristics for three photovoltaic high-efficiency concepts, intermediate band solar cells, and solar cells optically coupled to up and downconverters. These three concepts share the common feature that they allow excitation of electrons between at least three energy levels, which assures a better utilization of the solar s…