Search results for "Exciton"
showing 10 items of 317 documents
Influence of mobile ions on the electroluminescence characteristics of methylammonium lead iodide perovskite diodes
2016
In this work, we study the effect of voltage bias on the optoelectronic behavior of methylammonium lead iodide planar diodes. Upon biasing the diodes with a positive voltage, the turn-on voltage of the electroluminescence diminishes and its intensity substantially increases. This behavior is reminiscent of that observed in light-emitting electrochemical cells (LECs), single-layer electroluminescent devices in which the charge injection is assisted by the accumulation of ions at the electrode interface. Because of this mechanism, performances are largely independent from the work function of the electrodes. The similarities observed between planar perovskite diodes and LECs suggest that mobi…
Light absorption in silicon quantum dots embedded in silica
2009
The photon absorption in Si quantum dots (QDs) embedded in SiO2 has been systematically investigated by varying several parameters of the QD synthesis. Plasma-enhanced chemical vapor deposition (PECVD) or magnetron cosputtering (MS) have been used to deposit, upon quartz substrates, single layer, or multilayer structures of Si-rich- SiO2 (SRO) with different Si content (43-46 at. %). SRO samples have been annealed for 1 h in the 450-1250 °C range and characterized by optical absorption measurements, photoluminescence analysis, Rutherford backscattering spectrometry and x-ray Photoelectron Spectroscopy. After annealing up to 900 °C SRO films grown by MS show a higher absorption coefficient a…
Luminescence spectra and decay kinetics in ZnWO4 and CdWO4 crystals
2004
The luminescence spectra and luminescence decay kinetics in ZnWO4 (nominal pure and doped with Fe and Mo) under pulsed electron beam and pulsed nitrogen laser excitation have been investigated. It is suggested that the two-stage intrinsic luminescence decay observed under ionizing radiation excitation in ZnWO4 and CdWO4 was due to two different self-trapped exciton (STE) configurations in these crystals. The role of Fe and Mo impurities for scintillation efficiency in ZnWO4 and CdWO4 has been discussed. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
The Temperature Dependence of Scintillation Parameters in PbWO4 Crystals
1997
The luminescence spectra, decay kinetics and yield of luminescence in undoped PbWO 3 crystals were studied after pulsed electron beam irradiation. The rise time of luminescence pulses shows that two mechanisms - excitonic and recombination - were involved in luminescence center excited state formation. It is proposed that excited states of WO 3 and WO 2- 4 luminescence centers were formed from some metastable state, possibly from Pb related excitation.
Resonant laser spectroscopy of localized excitons in monolayer WSe_2
2016
Coherent quantum control and resonance fluorescence of few-level quantum systems is integral for quantum technologies. Here we perform resonance and near-resonance excitation of three-dimensionally confined excitons in monolayer WSe2 to reveal near-ideal single-photon fluorescence with count rates up to 3 MHz. Using high-resolution photoluminescence excitation spectroscopy of the localized excitons, we uncover a weakly fluorescent exciton state ∼5 meV blue shifted from the ground-state exciton, providing important information to unravel the precise nature of quantum states. Successful demonstration of resonance fluorescence paves the way to probe the localized exciton coherence in two-dime…
Optical switching of quantum states inside self-assembled quantum dots
2008
Abstract Photoluminescence and excitation of photoluminescence spectroscopy have been performed for two kinds of single InAs self-assembled quantum dots grown on GaAs. The presence of unintentional impurities (donors and acceptors) offers the possibility to switch from negative to positively charged excitons by selectively exciting impurity related optical transitions.
Self-organization and nanostructural control in thin film heterojunctions.
2013
In spite of more than two-decades of studies of molecular self-assembly, the achievement of low cost, easy-to-implement and multi-parameter bottom-up approaches to address the supramolecular morphology in three-dimensional (3D) systems is still missing. In the particular case of molecular thin films, the 3D nanoscale morphology and function are crucial for both fundamental and applied research. Here we show how it is possible to tune the 3D film structure (domain size, branching, etc.) of thin film heterojunctions with nanoscale accuracy together with the modulation of their optoelectronic properties by employing an easy two-step approach. At first we prepared multi-planar heterojunctions w…
Defects induced by He+ irradiation in γ-Si3N4
2021
International audience; Formation and evolution of defect levels in the electronic structure of silicon nitride with cubic spinel structure, -Si 3 N 4 , after the irradiation with He + ions was investigated using spectroscopic techniques. Strong changes of cathodoluminescence (CL), photoluminescence (PL), photoluminescence excitation (PLE) and Raman spectra were detected. In particular, excitonic PL was significantly inhibited and a new near-IR band appeared with the band gap excitation h≥E g =5.05 eV. This was explained by an effective trapping of photoinduced electrons and holes by charged defects. The spectral shift of PL with the excitation photon energy indicated heterogeneous nature…
Fluorescence quenching by trapped charge carriers in N,N-dimethylaminobenzylidene 1,3-indandione films
2010
Effects caused by the applied voltage on the steady state and time-resolved fluorescence of vacuum evaporated N,N-dimethylaminobenzylidene 1,3-indandione films sandwiched between gold and aluminium electrodes were investigated and discussed. Fluorescence enhancement and quenching as well as the fluorescence band narrowing depending on the applied voltage have been observed. Fluorescence decay and recovery take place on a time scale of tens of seconds after voltage is switched on and off. Similar fluorescence decay also takes place after switching on the excitation light. These fluorescence changes are attributed to the exciton quenching by trapped charge carriers.
Electron-hole bilayer quantum dots: Phase diagram and exciton localization
2003
We studied a vertical ``quantum dot molecule'', where one of the dots is occupied with electrons and the other with holes. We find that different phases occur in the ground state, depending on the carrier density and the interdot distance. When the system is dominated by shell structure, orbital degeneracies can be removed either by Hund's rule, or by Jahn-Teller deformation. Both mechanisms can lead to a maximum of the addition energy at mid-shell. At low densities and large interdot distances, bound electron-hole pairs are formed.