Search results for "Fermi energy"
showing 10 items of 60 documents
The ultrafast dynamics and conductivity of photoexcited graphene at different Fermi energies
2017
The ultrafast dynamics and conductivity of photoexcited graphene can be explained using solely electronic effects.
Spin-resolved unoccupied density of states in epitaxial Heusler-alloy films
2009
We investigate the electronic properties of epitaxial ${\text{Co}}_{2}({\text{Fe}}_{x}{\text{Mn}}_{1\ensuremath{-}x})\text{Si}$, ${\text{Co}}_{2}\text{Fe}({\text{Al}}_{1\ensuremath{-}x}{\text{Si}}_{x})$, and ${\text{Co}}_{2}({\text{Cr}}_{0.6}{\text{Fe}}_{0.4})\text{Al}$ films on MgO(100) substrates using circular dichroism in x-ray absorption spectroscopy (XMCD). Considering final-state electron correlations, the spin-resolved partial density of states at the Co atom can be extracted from XMCD data. The experimental results corroborate the predicted half-metallic ferromagnetic properties of these alloys and reveal a compositional dependence of the Fermi energy position within the minority b…
Covalent bonding and the nature of band gaps in some half-Heusler compounds
2005
Half-Heusler compounds \textit{XYZ}, also called semi-Heusler compounds, crystallize in the MgAgAs structure, in the space group $F\bar43m$. We report a systematic examination of band gaps and the nature (covalent or ionic) of bonding in semiconducting 8- and 18- electron half-Heusler compounds through first-principles density functional calculations. We find the most appropriate description of these compounds from the viewpoint of electronic structures is one of a \textit{YZ} zinc blende lattice stuffed by the \textit{X} ion. Simple valence rules are obeyed for bonding in the 8-electron compound. For example, LiMgN can be written Li$^+$ + (MgN)$^-$, and (MgN)$^-$, which is isoelectronic wi…
Orbital Rashba effect in a surface-oxidized Cu film
2020
Recent experimental observation of an unexpectedly large current-induced spin-orbit torque in surface oxidized Cu on top of a ferromagnet pointed to a possibly prominent role of the orbital Rashba effect (ORE) in this system. Here, we use first principles methods to investigate the ORE in a system of oxygen monolayer deposited on top of a Cu(111) film. We show that surface oxidization of the Cu film leads to a gigantic enhancement of the ORE near the Fermi energy. The resulting chiral orbital texture in the momentum space is exceptionally strong, reaching as much as $\ensuremath{\sim}0.5\ensuremath{\hbar}$ in magnitude. We find that resonant hybridization between O $p$ states and Cu $d$ sta…
Temperature dependence of x-ray absorption spectra in the ferromagnetic Heusler alloysMn2VAlandCo2FeAl
2010
We investigate the temperature dependence of the spin-resolved unoccupied density of states (DOS) in ferromagnetic ${\text{Co}}_{2}\text{FeAl}$ and ferrimagnetic ${\text{Mn}}_{2}\text{VAl}$ epitaxial films on MgO(100) using x-ray magnetic circular dichroism. We observe an unexpected strong temperature dependence of the DOS beyond the change expected from the Fermi distribution function. An increase in spectral weight is observed for majority states below the Fermi energy in the case of ${\text{Mn}}_{2}\text{VAl}$ and for minority states above the Fermi energy in the case of ${\text{Co}}_{2}\text{FeAl}$. Reduced atomic order near the interface suppresses the unexpected temperature dependence…
High-Mobility Ambipolar Magnetotransport in Topological Insulator Bi2Se3 Nanoribbons
2021
Nanoribbons of topological insulators (TIs) have been suggested for a variety of applications exploiting the properties of the topologically protected surface Dirac states. In these proposals it is crucial to achieve a high tunability of the Fermi energy, through the Dirac point while preserving a high mobility of the involved carriers. Tunable transport in TI nanoribbons has been achieved by chemical doping of the materials so to reduce the bulk carriers' concentration, however at the expense of the mobility of the surface Dirac electrons, which is substantially reduced. Here we study bare ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ nanoribbons transferred on a variety of oxide substrates and dem…
Hall effect and electronic structure of films
2010
Abstract Tunneling experiments have shown that in order to retain half-metallicity at room temperature not only a large gap is required but also a Fermi energy considerably distant from the minority band edges. We correlate the position of the Fermi energy in the spin minority gap obtained from band structure calculations to Hall effect experiments. As a model system we chose Co 2 Fe x Mn 1 - x Si , where the Fermi energy was calculated to move from the valence band edge of the minority states to the conduction band edge with increasing x . On high quality laser ablated epitaxial films we observe a sign change of both the normal and the anomalous Hall effect with doping. The experimental da…
Magnetic Heusler Compounds
2013
Abstract Heusler compounds are a remarkable class of intermetallic materials with 1:1:1 (often called Half-Heusler) or 2:1:1 composition comprising more than 1500 members. New properties and potential fields of applications emerge constantly; the prediction of topological insulators is the most recent example. Surprisingly, the properties of many Heusler compounds can easily be predicted by the valence electron count or within a rigid band approach. The wide range of the multifunctional properties of Heusler compounds is reflected in extraordinary magnetooptical, magnetoelectronic, and magnetocaloric properties. Co 2 -Heusler compounds are predicted and proven half-metallic ferromagnets sho…
Optimum Carrier Concentration in n-Type PbTe Thermoelectrics
2014
Taking La- and I-doped PbTe as an example, the current work shows the effects of optimizing the thermoelectric figure of merit, zT, by controlling the doping level. The high doping effectiveness allows the carrier concentration to be precisely designed and prepared to control the Fermi level. In addition to the Fermi energy tuning, La-doping modifies the conduction band, leading to an increase in the density of states effective mass that is confirmed by transport, infrared reflectance and hard X-ray photoelectron spectroscopy measurements. Taking such a band structure modification effect into account, the electrical transport properties can then be well-described by a self-consistent single…
Metal−Metal Bonding and Metallic Behavior in Some ABO2 Delafossites
1998
We present results of ab initio band structure calculations on some ABO2 delafossite oxides that have both the A and B sites occupied by transition metals. This class of materials includes insulators as well as some of the most conducting oxides. The calculations have been performed in order to understand the nature of the metallic and insulating states and the extensive metal−metal bonding displayed by these materials. The effect of polytypism on the electronic structure is examined. Among the interesting aspects of the electronic structure of these materials are the contributions from both A and B atoms to states near the Fermi energy and the highly disperse nature of bands derived from t…