Search results for "Ga2O3"

showing 3 items of 3 documents

Gallija oksīdu saturošu kodola-apvalka nanovadu heterostruktūru sintēze

2021

Darbā tika pētītas un attīstītas fizikālās metodes Ga2O3 nanovadu (NW) audzēšanai un Ga2O3 saturošu NW kodola-apvalka heterostruktūru izveidei ar ķīmisko tvaiku transportu un ar atomāru slāņu kondensācijas (ALD) izveidota slāņa atkvēlināšanu. Eksperimentu laikā iegūtās nanostruktūras raksturoja ar skenējošo un transmisijas elektronu mikroskopu, rentgendifrakciju un enerģētiski dispersīvo rentgenstaru spektroskopiju. Darbs sastāv no literatūras apskata, eksperimentālās daļas, rezultātu analīzes un diskusijas un secinājumu daļas. Darba centrālais pētījuma objekts bija Ga2O3 nanovadi. Ga2O3 šobrīd ir aktīvi pētīts pusvadītājs ar 4.9 eV platu aizliegto zonu un optisko caurlaidību redzamajā gais…

Ga2O3Kodola-Apvalka heterostruktūrasNanomateriāliFizikaNanovadiZnGa2O4
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Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure

2021

This research was funded by the Science Committee of the Ministry of Education and Science of the Republic of Kazakhstan (Grant No. AP08856540) as well as by the Latvian research council via the Latvian National Research Program under the topic ?High-Energy Physics and Accelerator Technologies?, Agreement No: VPP-IZM-CERN-2020/1-0002 for A.I. Popov. In addition, J. Purans is grateful to the ERAF project 1.1.1.1/20/A/057 while A. Platonenko was supported by Latvian Research Council No. LZP-2018/1-0214. The authors thank A. Lushchik and M. Lushchik for many useful discussions. The research was (partly) performed in the Institute of Solid State Physics, University of Latvia ISSP UL. ISSP UL as…

TechnologyDEEP DONOR02 engineering and technologyConductivityDFT01 natural sciencesOXYGENCrystalpoint defectsGeneral Materials ScienceDENSITY FUNCTIONAL THEORYGalliump-type conductivityMicroscopyQC120-168.85Condensed matter physicsMONOCLINICSTP TYPE CONDUCTIVITYELECTRONIC.STRUCTUREEngineering (General). Civil engineering (General)021001 nanoscience & nanotechnology3. Good healthCALCULATIONSβ-Ga<sub>2</sub>O<sub>3</sub>OXYGEN VACANCIES:NATURAL SCIENCES [Research Subject Categories]Density functional theoryElectrical engineering. Electronics. Nuclear engineeringTA1-20400210 nano-technologyPOINT DEFECTSFIRST PRINCIPLE CALCULATIONSβ-Ga2O3Materials scienceP-TYPE CONDUCTIVITYELECTRONIC STRUCTUREVACANCY DEFECTSchemistry.chemical_elementElectronic structureFIRST-PRINCIPLE DENSITY-FUNCTIONAL THEORIESGALLIUM COMPOUNDSArticleDENSITY-FUNCTIONAL-THEORYVacancy defect0103 physical sciences010306 general physicsΒ-GA2 O3QH201-278.5HYBRID EXCHANGEoxygen vacancyCrystallographic defectTK1-9971Descriptive and experimental mechanicschemistryGALLIUMdeep donorSupercell (crystal)DFT; β-Ga<sub>2</sub>O<sub>3</sub>; oxygen vacancy; deep donor; p-type conductivity; point defectsOXYGEN VACANCYMaterials
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Ab-Initio Calculations of Oxygen Vacancy in Ga2O3 Crystals

2021

The research has been funded by the Science Committee of the Ministry of Education and Science of the Republic of Kazakhstan (Grant No. AP08856540). J. Purans and A.I.Popov acknowledge the ERAF project 1.1.1.1/20/A/057 “Functional Ultrawide Bandgap Gallium Oxide and Zinc Gallate Thin Films and Novel Deposition Technologies”. The Institute of Solid State Physics, University of Latvia (Latvia) as the Centre of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD01-2016-2017-Teaming Phase2 under grant agreement No. 739508, project CAMART2.

ab-initio calculationsβ-ga2o3band structureQC1-999β-GaOGeneral Physics and Astronomy02 engineering and technologyDFT01 natural sciences7. Clean energyZinc gallateGallium oxideAb initio quantum chemistry methodsPolitical science0103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]media_common.cataloged_instanceEuropean unionmedia_common010302 applied physicsPhysicsGeneral Engineeringoxygen vacancydft021001 nanoscience & nanotechnologyEngineering physicsOxygen vacancy3. Good healthChristian ministry0210 nano-technologyLatvian Journal of Physics and Technical Sciences
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