Search results for "Germanium"

showing 10 items of 249 documents

Spectroscopic Properties of Holmium-Aluminum-Germanium Co-doped Silica Fiber

2020

We report the basic spectroscopic properties of a home-made holmium-aluminum-germanium co-doped silica fiber, designed for laser applications. We present the ground-state and excited-state absorpti...

Materials scienceSilica fiberAnalytical chemistryPhysics::Opticschemistry.chemical_elementGermanium02 engineering and technologyLaser01 natural sciencesAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic Materialslaw.invention010309 opticsCondensed Matter::Materials Science020210 optoelectronics & photonicschemistryAluminiumlaw0103 physical sciences0202 electrical engineering electronic engineering information engineeringExcited state absorptionHolmiumCo dopedFiber and Integrated Optics
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Hydrogen-Related Paramagnetic Centers in Ge-Doped Sol-Gel Silica Induced by γ-Ray Irradiation

2006

We have studied the generation mechanisms of H(II) paramagnetic centers in Ge-doped silica by investigating up to 104 mol ppm sol-gel Ge-doped silica materials. We have considered materials with the same concentrations of Ge but that are produced by two different densification routes that give rise to different concentrations of Ge-related oxygen deficient centers (GeODC(II)). These centers are characterized by an optical absorption band at ∼5.2 eV (B2 β band) and two related emissions at ∼3.2 eV and ∼4.3 eV. The GeODC(II) content was estimated by absorption and emission measurements. The H(II) centers were induced by room temperature γ-ray irradiation and their concentration was determined…

Materials scienceSilica gelDopingAnalytical chemistryGeneral ChemistryCondensed Matter PhysicsElectronic Optical and Magnetic Materialslaw.inventionBiomaterialschemistry.chemical_compoundParamagnetismchemistrylawAbsorption bandMaterials ChemistryCeramics and CompositesIrradiationAbsorption (chemistry)Electron paramagnetic resonancesol-gel glasses aerogel germanium doping germanium defects photosensitivityNuclear chemistrySol-gelJournal of Sol-Gel Science and Technology
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Telecom to mid-infrared supercontinuum generation in a silicon germanium waveguide

2015

We report the first demonstration of broadband supercontinuum generation in silicon-germanium waveguides. Upon propagation of ultra-short femtosecond pulses in a 3-cm-long waveguide, the broadening extended from 1.455µm to 2.788µm (at the −30-dB point).

Materials scienceSilicon photonicsbusiness.industryMid infraredchemistry.chemical_elementWaveguide (optics)SupercontinuumSilicon-germaniumErbiumchemistry.chemical_compoundOpticschemistryBroadbandFemtosecondOptoelectronicsbusiness
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Cathodoluminescence of crystalline and amorphous SiO2 and GeO2

2001

Abstract Cathodoluminescence (CL) and its temperature-dose behaviour are presented for different crystalline and amorphous modifications of SiO 2 and GeO 2 as well as for Ge-doped SiO 2 layers. The crystalline samples include four-fold coordinated Si and Ge in hexagonal quartz and quartz-like crystals, respectively, as well six-fold coordinated atoms in tetragonal rutile-like crystals. The detected luminescence bands, in general, are attributed to three optical active luminescence centres: the two-fold coordinated silicon (=Si:) and germanium (=Ge:) centre, respectively, the non-bridging oxygen hole centre (NBOHC) and the self trapped exciton (STE). The first ones, the oxygen deficient cent…

Materials scienceSiliconExcitonMineralogychemistry.chemical_elementCathodoluminescenceGermaniumCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsAmorphous solidTetragonal crystal systemCrystallographychemistryMaterials ChemistryCeramics and CompositesLuminescenceQuartzJournal of Non-Crystalline Solids
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Effect of germanium addition on the properties of reactively sputtered ZrN films

2005

For the first time, Zr-Ge-N films were deposited on silicon and steel substrates by sputtering a Zr-Ge composite target in reactive Ar-N2 mixture. The films were characterised by electron probe microanalysis, X-ray diffraction, micro-Raman spectroscopy and depth-sensing indentation. The effects of the Ge content and substrate bias voltage on the films' structure, internal stress, hardness and oxidation resistance were investigated. Substrate bias strongly influenced the chemical composition of the films being observed by means of a steep decrease in the Ge content for negative bias voltages higher than -80 V. In these cases, a significant hardness improvement was registered. For -100 V bias…

Materials scienceSiliconReactive sputteringMetals and Alloyschemistry.chemical_elementMineralogyGermaniumSurfaces and InterfacesSubstrate (electronics)Surfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAmorphous solidTetragonal crystal systemchemistryHardnessSputteringOxidationCavity magnetronMaterials ChemistryCubic zirconiaComposite materialThin Solid Films
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High-Density Arrays of Germanium Nanowire Photoresistors

2006

Here we present for the first time a study of the photoresistive properties and dynamics of ordered, high-density arrays of germanium nanowire photoresistors. Germanium is a wellknown semiconducting material with an indirect bandgap, Eg, of approximately 0.66 eV (temperature T = 300 K) and has been widely used for the fabrication of photodetectors, radiation detectors, charged particle and photon tracking devices, far-infrared photoresistors, and numerous other devices. During the last few years there has also been increasing interest in the use of nanostructures (quantum dots and wires) of both germanium and silicon as materials for potential applications in sensors, nanophotonics, and nan…

Materials scienceSiliconbusiness.industryMechanical EngineeringPhotoconductivityNanowirechemistry.chemical_elementGermaniumConductive atomic force microscopyIndium tin oxideSemiconductorNanoelectronicschemistryMechanics of MaterialsOptoelectronicsGeneral Materials SciencebusinessAdvanced Materials
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Polarization insensitive wavelength conversion of 40 Gb/s DPSK signals in a silicon germanium waveguide

2015

We demonstrate polarization insensitive FWM-based wavelength conversion of 40Gb/s DPSK signals in a SiGe waveguide, with 0.42-dB polarization-dependent loss. A 1.5-dB Dower nenaltv was measured at a BER of 10−9.

Materials scienceSiliconbusiness.industrychemistry.chemical_elementNonlinear opticsGermaniumPolarization (waves)Silicon-germaniumchemistry.chemical_compoundOpticschemistryCMOSWavelength-division multiplexingbusinessPhase-shift keying
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Increasing the stability of the Ge-containing extra-large pore ITQ-33 zeolite by post-synthetic acid treatments

2018

[EN] Extra-large pore ITQ-33 zeolite (ITT, 18 x 10 x 10-rings) is a very promising catalyst for the catalytic cracking of gasoil but, unfortunately, this material shows a limited hydrothermal stability due to the large germanium content present in the ITQ-33 structure. Taking this into account, the Ge-containing ITQ-33 has been post synthetically modified using different acid procedures with the aim of studying the effect of these treatments on the overall hydrothermal stability of this extra-large pore zeolite. In this sense, the as-prepared ITQ-33 has been treated with different HCl solutions in ethanol (from 0.1 to 1 M), containing also tetraethylorthosilicate (TEOS) as silicon precursor…

Materials scienceSiliconchemistry.chemical_elementGermaniumCatalytic cracking of gasoil02 engineering and technologyCrystal structure010402 general chemistryFluid catalytic cracking01 natural sciencesHydrothermal circulationCatalysisGermaniumIsomorphic substitutionAdsorptionQUIMICA ORGANICAGeneral Materials ScienceZeoliteExtra-large pore zeoliteGeneral Chemistry021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical scienceschemistryChemical engineeringMechanics of Materials0210 nano-technology
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Transmission Efficiency of the SAGE Spectrometer Using GEANT4

2013

The new SAGE spectrometer allows simultaneous electron and γ-ray in-beam studies of heavy nuclei. A comprehensive GEANT4 simulation suite has been created for the SAGE spectrometer. This includes both the silicon detectors for electron detection and the germanium detectors for γ-ray detection. The simulation can be used for a wide variety of tests with the aim of better understanding the behaviour of SAGE. A number of aspects of electron transmission are presented here.

Materials scienceSpectrometerSiliconta114Physics::Instrumentation and Detectors010308 nuclear & particles physicsbusiness.industrySAGEDetectorchemistry.chemical_elementGermaniumElectron01 natural sciences3. Good healthElectron transmissionchemistryTransmission (telecommunications)0103 physical sciencesOptoelectronicsComputer Science::Symbolic ComputationNuclear Experiment010306 general physicsbusinessFission and Properties of Neutron-Rich Nuclei, pg. 332 (2013)
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New Results on High-Resolution 3-D CZT Drift Strip Detectors

2020

Intense research activities have been carry out in the development of room temperature gamma ray spectroscopic imagers, aiming to compete with the excellent energy resolution of high-purity germanium (HPGe) detectors (0.3 % FWHM at 662 keV) obtained after cryogenic cooling. Cadmium-zinc-telluride (CZT) detectors equipped with pixel, strip and virtual Frisch-grid electrode structures represented an appealing solution for room temperature measurements. In this work, we present the performance of new high-resolution CZT drift strip detectors (19.4 x 19.4 x 6 mm3), recently fabricated at IMEM-CNR of Parma (Italy) in collaboration with due2lab company (Reggio Emilia, Italy). The detectors, worki…

Materials scienceX-ray and gamma ray detectorsbusiness.industryDetectorSettore FIS/01 - Fisica SperimentaleGamma raychemistry.chemical_elementGermaniumCZT detectorTemperature measurementCathodeSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Semiconductor detectorlaw.inventionAnodeOpticsPlanarchemistrylawbusiness
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