Search results for "HEMTs"
showing 3 items of 3 documents
CESAR: Cryogenic Electronics for Space Applications
2013
Ultra-low temperature sensors provide unprecedented performances in X-ray and far infrared astronomy by taking advantage of physical properties of matter close to absolute zero. CESAR is an FP7 funded project started in December 2010, that gathers six European laboratories around the development of high performances cryogenic electronics. The goal of the project is to provide far-IR, X-ray and magnetic sensors with signal-processing capabilities at the heart of the detectors. We present the major steps that constitute the CESAR work, and the main results achieved so far.
Experimental investigation of the kink effect and the low frequency noise properties in pseudomorphic HEMT’s
2005
The kink effect in low-noise pseudomorphic (AlGaAs/InGaAs) HEMT's has been examined in detail by investigating the steady-state and pulsed I-V characteristics, the behavior of the output conductance dispersion and the performance of the gate leakage current to understand its origin. No clear evidence of impact ionization occurrence in the InGaAs channel at kink bias conditions (V-DS.kink = 1.5 V) has been found, thus suggesting that the predominant mechanism should be attributed to trap-related phenomena. A significant rise of the gate current has been found at very high drain voltages (far from V-DS.kink) associated with low drain current values which is probably due to impact ionization o…
A Test Circuit for GaN HEMTs Dynamic Ron Characterization in Power Electronics Applications
2019
Wide bandgap devices such as GaN HEMTs are a promising technology in the field of Power Electronics. Due to the physical properties of the Gallium nitride and the device design, they can outperform their Silicon counterparts for the design of highly efficient power switching converters. However, its design should face certain effects that can diminish its performance. One of such effect is the degradation mechanism known as dynamic onresistance (dynamic RON,), being its mitigation one of the main objectives in the design of the device. In this paper, a circuit is proposed for assessing if this effect is present in GaN transistors in power electronics applications. The circuit allows testing…