Search results for "HRES"

showing 10 items of 695 documents

Microchip Random Laser based on a disordered TiO2-nanomembranes arrangement

2012

International audience; We developed a new scheme for obtaining coherent random lasing based on a chip consisting of a polymer film doped with Rhodamine 6G, having as scatterers butterfly-like TiO2 nanomembranes (TiO2-NM) supported on a glass substrate. The feedback mechanism for laser action is due to the multiple scattering of light by TiO2-NM rather than provided by localized variations of the refractive index in the polymer film. The above-threshold multiple spikes signature indicative of random laser emission with coherent feedback is confirmed. As nanomembranes are foreseen as new MEMS/NEMS building blocks, a new generation of combined active/passive photonic devices can be envisaged.

Materials sciencePhysics::Optics02 engineering and technology01 natural sciencesLight scatteringlaw.inventionRhodamine 6Gchemistry.chemical_compoundCondensed Matter::Materials ScienceOpticslaw0103 physical sciencesSCATTERING010306 general physicsDye laserRandom laserbusiness.industry021001 nanoscience & nanotechnologyLaserAtomic and Molecular Physics and OpticschemistryOptoelectronicsPhotonics0210 nano-technologybusinessRefractive indexLasing threshold
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Electrical conductivity properties of expanded graphite-polycarbonatediol polyurethane composites

2014

Conductive polymer composites of segmented polycarbonatediol polyurethane and expanded graphite (EG) have been synthesized with different amounts of EG conductive filler (from 0 to 50 wt%). SEM, X-ray diffraction measurements, Fourier transform infrared and Raman spectroscopies demonstrated a homogeneous dispersion of the EG filler in the matrix. The dielectric permittivity of the composites showed an insulator to conductor percolation transition with increase in EG content. Significant changes in the dielectric permittivity take place when the weight fraction of EG is in the range 20–30 wt%. Special attention has been paid to the dependence of the conductivity on frequency, temperature and…

Materials sciencePolymers and PlasticsOrganic ChemistryPercolation thresholdConductivitysymbols.namesakePercolation theoryElectrical resistivity and conductivityMaterials ChemistrysymbolsGraphiteComposite materialRaman spectroscopyMass fractionElectrical conductorPolymer International
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Nd:KGW Laser under Flashlamp-pumping at Repetition Rate up to 50 Hz and Average Power of 70 W (free-lasing and Q-switched mode)

1997

The laser performance of Nd:KGd(WO4)2 crystal or Nd:KGW has been studied under flashlamp-pumping in the free-running and Q-switched mode (with active or passive Q-switching) at repetition rate up to 50 Hz. Maximum output powers respectively of 70 and 30 W were achieved at 1.06 pm with a maximum efficiency of 6%. Free-running emission was also obtained at 1.35 pm with a maximum average power of 24 W and a total efficiency of 2.9% at this wavelength. A comparison with a similar Nd:YAG crystal is given showing a noticeable advantage for Nd:KGW.

Materials scienceRepetition (rhetorical device)business.industryMode (statistics)Laserlaw.inventionPower (physics)Maximum efficiencyCrystalWavelengthOpticslawbusinessLasing thresholdAdvanced Solid State Lasers
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Analysis of multipactor RF breakdown in a waveguide containing a transversely magnetized ferrite

2016

In this paper, the multipactor RF breakdown in a parallel-plate waveguide partially filled with a ferrite slab magnetized normal to the metallic plates is studied. An external magnetic field is applied along the vertical direction between the plates in order to magnetize the ferrite. Numerical simulations using an in-house 3-D code are carried out to obtain the multipactor RF voltage threshold in this kind of structures. The presented results show that the multipactor RF voltage threshold at certain frequencies becomes considerably lower than for the corresponding classical metallic parallel-plate waveguide with the same vacuum gap

Materials scienceSaturation magnetizationElectromagnetic waveguidesPhysics::Instrumentation and DetectorsIn-house 3D codeTransversely magnetized ferrite01 natural sciencesVacuum gap010305 fluids & plasmasExternal magnetic fieldOptics0103 physical sciencesVertical directionRadio frequencyTEORIA DE LA SEÑAL Y COMUNICACIONESParallel-plate waveguideElectronic engineeringNumerical simulationsElectrical and Electronic EngineeringMagnetic anisotropyElectric breakdownMultipactor RF breakdown analysis010302 applied physicsbusiness.industryParallel plate waveguidesFerrite slabRF breakdownMicrowave switchesVacuum gapElectronic Optical and Magnetic MaterialsMagnetic fieldMultipactor RF voltage thresholdMagnetic fieldMetallic platesMagnetic fieldsSlabFerrite (magnet)Ferrite waveguidesFerrite devicesMultipactor effectbusinessVoltageNumerical analysis
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Rheological Percolation Threshold in High-Viscosity Polymer/CNTs Nanocomposites

2017

AbstractPolystyrene (PS)/multi-walled carbon nanotubes (CNT) nanocomposites have been prepared through melt mixing processing aiming at obtaining a uniform and homogeneous dispersion of the used nanoparticles within the polymeric matrix. Optical and scanning electron microscopy has been employed to determine the dispersion and distribution of CNTs at different length scales. Furthermore, the linear viscoelastic behavior of formulated nanocomposites has been deeply investigated. As a result of CNTs added, the nanocomposites experience a transition from liquid-like to solid-like rheological behavior, and a disappearance of relaxation processes at low frequency can be noticed. By plotting G’ v…

Materials scienceScanning electron microscopePolystyrene (PS) multi-walled carbon nanotubes Rheological percolation nanocompositesPhysics::Medical PhysicsPhysics::Optics02 engineering and technologyCarbon nanotube010402 general chemistry01 natural sciencesViscoelasticitylaw.inventionCondensed Matter::Materials ScienceRheologylawComposite materialchemistry.chemical_classificationNanocompositeMechanical EngineeringPercolation thresholdPolymer021001 nanoscience & nanotechnology0104 chemical sciencesCondensed Matter::Soft Condensed MatterchemistryMechanics of Materials0210 nano-technologyDispersion (chemistry)Mechanics of Materials; Mechanical Engineering
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Pore structural characteristics, size exclusion properties and column performance of two mesoporous amorphous silicas and their pseudomorphically tra…

2007

Highly ordered mesoporous silicas such as, mobile composition of matter, MCM-41, MCM-48, and the SBA-types of materials have helped to a large extent to understand the formation mechanisms of the pore structure of adsorbents and to improve the methods of pore structural characterization. It still remains an open question whether the high order, the regularity of the pore system, and the narrow pore size distribution of the materials will lead to a substantial benefit when these materials are employed in liquid phase separation processes. MCM-41 type 10 microm beads are synthesized following the route of pseudomorphic transformation of highly porous amorphous silicas. Highly porous silicas a…

Materials scienceSilica gelSize-exclusion chromatographyAnalytical chemistryFiltration and SeparationPercolation threshold[CHIM.MATE]Chemical Sciences/Material chemistry010501 environmental sciences010402 general chemistryMolecular sieve01 natural sciences0104 chemical sciencesAnalytical ChemistryAmorphous solidchemistry.chemical_compoundchemistryMCM-41Mesoporous materialPorosity0105 earth and related environmental sciencesJournal of Separation Science
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Effect of the Content and Ordering of the sp2 Free Carbon Phase on the Charge Carrier Transport in Polymer-Derived Silicon Oxycarbides

2020

The present work elaborates on the correlation between the amount and ordering of the free carbon phase in silicon oxycarbides and their charge carrier transport behavior. Thus, silicon oxycarbides possessing free carbon contents from 0 to ca. 58 vol.% (SiOC/C) were synthesized and exposed to temperatures from 1100 to 1800 &deg

Materials scienceSiliconAnalytical chemistryPharmaceutical Sciencechemistry.chemical_element02 engineering and technology01 natural sciencesAnalytical Chemistrylcsh:QD241-441symbols.namesakeHall measurementslcsh:Organic chemistryElectrical resistivity and conductivityPhase (matter)0103 physical sciencesDrug Discoveryfree carbonPhysical and Theoretical Chemistry010302 applied physicsOrganic ChemistryDangling bondPercolation thresholdsilicon oxycarbides021001 nanoscience & nanotechnologychemistryChemistry (miscellaneous)charge carrier transportRaman spectroscopysymbolsMolecular MedicineCharge carrier0210 nano-technologyRaman spectroscopyCarbonMolecules
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Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals

2002

We have realized nanocrystal memories by using silicon quantum dots embedded in silicon dioxide. The Si dots with the size of few nanometers have been obtained by chemical vapor deposition on very thin tunnel oxides and subsequently coated with a deposited SiO2 control dielectric. A range of temperatures in which we can adequately control a nucleation process, that gives rise to nanocrystal densities of ∼3×1011 cm−2 with good uniformity on the wafer, has been defined. The memory effects are observed in metal-oxide-semiconductor capacitors or field effect transistors by significant and reversible flat band or threshold voltage shifts between written and erased states that can be achieved by …

Materials scienceSiliconPhysics and Astronomy (miscellaneous)business.industryGeneral EngineeringOxidechemistry.chemical_elementNanotechnologyChemical vapor depositionSettore ING-INF/01 - ElettronicaThreshold voltagechemistry.chemical_compoundchemistryNanocrystalMOSFETOptoelectronicsWaferField-effect transistorElectrical and Electronic EngineeringbusinessSurfaces and Interface
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Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memori…

2006

We study the role that the denuded zone around Si nanocrystals obtained by chemical vapor deposition plays on the fluctuations of the dot surface coverage. In fact, the capture mechanism of the silicon adatoms in the proximity of existing dots restricts the number of possible nucleation sites, the final dot size, and the dot position, thus driving the process toward partial self-order. We numerically evaluate the relative dispersion of surface coverage for several gate areas and compare the results to the fully random case. The coverage dispersion is related to the fluctuations from bit to bit of the threshold voltage window (Δ Vth) distribution of nanocrystal memories. The evaluations, com…

Materials scienceSiliconQuantum dotsbusiness.industryNucleationGeneral Physics and Astronomychemistry.chemical_elementWindow (computing)NanotechnologyChemical vapor depositionCondensed Matter::Mesoscopic Systems and Quantum Hall EffectSettore ING-INF/01 - Elettronicanon volatile memoriesSettore FIS/03 - Fisica Della Materiachemical vapor depositionThreshold voltageDistribution (mathematics)chemistryNanocrystalnanoelectronic devicesscaling lawsDispersion (optics)OptoelectronicsbusinessJournal of Applied Physics
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Controlling the mode of operation of organic transistors through side chain engineering

2016

Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode…

Materials scienceTransconductanceNanotechnologyHardware_PERFORMANCEANDRELIABILITY02 engineering and technologyElectrolyte010402 general chemistry01 natural scienceslaw.inventionelectrochemical transistorlawMD MultidisciplinaryHardware_INTEGRATEDCIRCUITSSide chainConductive polymerMultidisciplinarySubthreshold conductionbusiness.industrysemiconducting polymersTransistor021001 nanoscience & nanotechnologyequipment and supplies0104 chemical sciencesorganic electronicsSemiconductorPhysical SciencesOptoelectronics0210 nano-technologybusinessHardware_LOGICDESIGNOrganic electrochemical transistor
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