Search results for "Hall Effect"
showing 10 items of 702 documents
Absorption Properties of Metal–Semiconductor Hybrid Nanoparticles
2011
The optical response of hybrid metal-semiconductor nanoparticles exhibits different behaviors due to the proximity between the disparate materials. For some hybrid systems, such as CdS-Au matchstick-shaped hybrids, the particles essentially retain the optical properties of their original components, with minor changes. Other systems, such as CdSe-Au dumbbell-shaped nanoparticles, exhibit significant change in the optical properties due to strong coupling between the two materials. Here, we study the absorption of these hybrids by comparing experimental results with simulations using the discrete dipole approximation method (DDA) employing dielectric functions of the bare components as input…
In-plane remote photoluminescence excitation of carbon nanotube by propagating surface plasmon
2012
International audience; In this work, we demonstrate propagating surface plasmon polariton (SPP) coupled photoluminescence (PL) excitation of single-walled carbon nanotube (SWNT). SPPs were launched at a few micrometers from individually marked SWNT, and plasmon-coupled PL was recorded to determine the efficiency of this remote in-plane addressing scheme. The efficiency depends upon the following factors: (i) longitudinal and transverse distances between the SPP launching site and the location of the SWNT and (ii) orientation of the SWNT with respect to the plasmon propagation wave vector (k(SPP)). Our experiment explores the possible integration of carbon nanotubes as a plasmon sensor in p…
Importance of spin current generation and detection by spin injection and the spin Hall effect for lateral spin valve performance.
2018
Lateral spin valves are attractive device geometries where functional spin currents can be generated and detected by various mechanisms, such as spin injection and the direct and the inverse spin Hall effect. To understand the mechanisms behind these effects better, as well as their potential for application in devices, we combine multiple mechanisms in multi-terminal Pt-Py-Cu lateral spin valves: we generate pure spin currents in the copper spin conduit both via the spin Hall effect in platinum and electric spin injection from permalloy and detect signals both via conventional non-local detection and via the inverse spin Hall effect in the same device at variable temperatures. Differences …
Quantum information processing on spin degrees of freedom in QDs placed in diluted magnetic semiconductor
2006
The spin degrees of freedom in quantum dot (QD) embedded in a diluted magnetic semiconductor (DMS) medium are considered in a model of a qubit and a gate for quantum information processing (QIP). The qubit is defined as a singlet and triplet pair of states of two electrons in a He-type QD in the DMS medium with strongly enhanced gyromagnetic factor. Methods of qubit rotation (Rabi oscillations) as well as two-qubit operations are suggested and analyzed. Moreover, decoherence related to spin waves (magnon-induced dephasing) in this new system (QD in DMS) is studied, and the relevant time-scale is estimated in accordance with preliminary experimental results. (© 2006 WILEY-VCH Verlag GmbH & C…
Spin transport across antiferromagnets induced by the spin Seebeck effect
2018
For prospective spintronics devices based on the propagation of pure spin currents, antiferromagnets are an interesting class of materials that potentially entail a number of advantages as compared to ferromagnets. Here, we present a detailed theoretical study of magnonic spin current transport in ferromagnetic-antiferromagnetic multilayers by using atomistic spin dynamics simulations. The relevant length scales of magnonic spin transport in antiferromagnets are determined. We demonstrate the transfer of angular momentum from a ferromagnet into an antiferromagnet due to the excitation of only one magnon branch in the antiferromagnet. As an experimental system, we ascertain the transport acr…
Quantum effects and orientational ordering in adsorbed layers of linear molecules
1994
We study the influence of quantum fluctuations on the herringbone transition in adsorbed complete √3-mono-layers of diatomic molecules. Using Path-Integral Monte Carlo simulations for rotations, we can quantify the shift of the transition temperature for a highly realistic model to describe N2 on graphite. In addition, the zero-point motion of the librating molecules depresses the ground-state order parameter. We compare the benchmark data to quadratic Feynman-Hibbs effective potential simulations and to a quasiharmonic approximation. Using a simplified model for this transition, we study systematically quantum effects being relevant for lighter molecules. Depending on the rotator's rotatio…
Tuning the band gap of PbCrO4 through high-pressure: Evidence of wide-to-narrow semiconductor transitions
2014
The electronic transport properties and optical properties of lead(II) chromate (PbCrO4) have been studied at high pressure by means of resistivity, Hall-effect, and optical-absorption measurements. Band-structure first-principle calculations have been also performed. We found that the low-pressure phase is a direct band-gap semiconductor (Eg = 2.3 eV) that shows a high resistivity. At 3.5 GPa, associated to a structural phase transition, a band-gap collapse takes place, becoming Eg = 1.8 eV. At the same pressure the resistivity suddenly decreases due to an increase of the carrier concentration. In the HP phase, PbCrO4 behaves as an n-type semiconductor, with a donor level probably associat…
Quantum size effects in solitary wires of bismuth
2007
We have performed four-probe electrical transport measurements on solitary highly crystalline wires of semimetallic bismuth with aspect ratios up to 60 at room and at cryogenic temperatures. By proper choice of the substrate material and the film deposition parameters, lithographic wires with lateral dimensions of down to one single grain, $\sim 250$ nm, were fabricated. The electrical resistance of each wire was measured against its thickness through successive reactive ion etching of the self-same wire. Quantum size effects revealed themselves as regular oscillations in the electrical resistance. Some evidence for the semimetal-to-semiconductor phase transition has been detected. The meas…
Pressure dependence of photoluminescence of InAs/InP self-assembled quantum wires
2007
6 páginas, 4 figuras, 1 tabla.-- PACS 62.50.+ p, 73.21.Hb, 78.55.Cr, 78.67.Lt, 81.15.Hi, 81.16.Dn
Transport measurements under pressure in III–IV layered semiconductors
2007
PACS 61.50.Ks, 62.50.+p, 72.15.Jf, 72.80.Jc This paper reports on Hall effect, resistivity and thermopower effect measurements under high pressure up to 12 GPa in p-type γ-indium selenide (InSe) and e-gallium selenide (GaSe). The paper focuses on two applications of transport measurements under pressure: electronic structure and phase transition studies. As concerns the electronic structure, we investigate the origin of the striking differences between the pressure behaviour of transport parameters in both layered compounds. While the hole concentration and mobility increase moderately and monotonously in e-GaSe up to 10 GPa, a large increase of the hole concentration at near 0.8 GPa and a …