Search results for "IRRADIATION"
showing 10 items of 1012 documents
Energy loss and fluence dependency of swift‐ion‐induced hardening in LiF
2005
The depth profiles of the hardening effects of LiF irradiated with swift Au, Pb, Bi, Kr, Ni and S ions of MeV-GeV energy have been studied as a function of ion penetration depth. For all projectiles, the hardness increases scaling with the range of ions and depending on ion fluence and energy loss. Heavy ions (Au, Pb, Bi), for which the energy loss noticeably exceeds the threshold of about 10 keV/nm for severe track core damage, cause uniform increase of hardness in the entire irradiated layer. For irradiations with lighter S, Ni, Kr ions, the hardening displays strong depth dependence. Ion-induced hardening is related to pinning of dislocations by defect aggregates (possibly small Li collo…
Microscopic theory of colloid formation in solids under irradiation
1996
Results of the first-principles study of diffusion-controlled aggregation of Frenkel defects-interstitial atoms-under irradiation of solids are presented. Conditions of the efficient radiation-induced aggregation of vacancies and interstitials are studied and the scenario of this process is presented.
Toughened epoxy matrices produced by e-beam irradiation
2009
Nd:YAG laser induced E′ centers probed by in situ absorption measurements
2005
We investigated various types of commercial silica irradiated with a pulsed Nd:YAG laser radiation (4.66 eV), with exposure time ranging up to 10000 s. Transient E' centers were probed in situ by measuring the amplitude of the optical absorption band at 5.8 eV (due to E' centers) both during and after irradiation. The laser-induced absorption is observed only in natural samples, whereas the synthetic materials exhibit high toughness to radiation effect. The reported results evidence that the kinetics of E' centers is influenced by their reaction with diffusing molecular hydrogen H2 made available by dimerization of radiolytic H0.
Bleaching of optical activity induced by UV Laser exposure in natural silica
2004
We report experimental data on two types of natural silica, differing for their OH content, irradiated with UV photons (4.66 eV) from a pulsed Nd:YAG laser. Irradiation induces a reduction of the absorption band at 5.12eV and of the associated emissions at 3.14eV and 4.28eV, ascribed to twofold coordinated Ge (=Ge'') centers pre-existing in our samples. The bleaching is mainly due to the post-irradiation conversion of =Ge'' into the paramagnetic H(II) center via trapping of a H atom. Comparison with literature data points out the peculiarities of silica with a low Ge concentration as regards UV induced transformations.
Free-standing 2D metals from binary metal alloys
2020
Recent experiment demonstrated the formation of free-standing Au monolayers by exposing Au-Ag alloy to electron beam irradiation. Inspired by this discovery, we used semi-empirical effective medium theory simulations to investigate monolayer formation in 30 different binary metal alloys composed of late d-series metals Ni, Cu, Pd, Ag, Pt, and Au. In qualitative agreement with the experiment, we find that the beam energy required to dealloy Ag atoms from Au-Ag alloy is smaller than the energy required to break the dealloyed Au monolayer. Our simulations suggest that similar method could also be used to form Au monolayers from Au-Cu alloy and Pt monolayers from Pt-Cu, Pt-Ni, and Pt-Pd alloys.
Optical absorption induced by UV laser radiation in Ge-doped amorphous silica probed by in situ spectroscopy
2007
We studied the optical absorption induced by 4.7eV pulsed laser radiation on Ge-doped a-SiO2 synthesized by a sol-gel technique. The absorption spectra in the ultraviolet spectral range were measured during and after the end of irradiation with an in situ technique, evidencing the growth of an absorption signal whose profile is characterized by two main peaks near 4.5eV and 5.7eV and whose shape depends on time. Electron spin resonance measurements performed ex situ a few hours after the end of exposure permit to complete the information acquired by optical absorption by detection of the paramagnetic Ge(1) and Ge-E' centers laser-induced in the samples.
Hydrogen-related conversion processes of Ge-related point defects in silica triggered by UV laser irradiation
2005
The conversion processes of Ge-related point defects triggered in amorphous SiO2 by 4.7eV laser exposure were investigated. Our study has focused on the interplay between the (=Ge•-H) H(II) center and the twofold coordinated Ge defect (=Ge••). The former is generated in the post-irradiation stage, while the latter decays both during and after exposure. The post-irradiation decay kinetics of =Ge•• is isolated and found to be anti-correlated to the growth of H(II), at least at short times. From this finding it is suggested that both processes are due to trapping of radiolytic H0 at the diamagnetic defect site. Furthermore, the anti-correlated behavior is preserve…
UV-Photoinduced Defects In Ge-Doped Optical Fibers
2005
We investigated the effect of continuous-wave (cw) UV laser radiation on single-mode Ge-doped H2- loaded optical fibers. An innovative technique was developed to measure the optical absorption (OA) induced in the samples by irradiation, and to study its dependence from laser fluence. The combined use of the electron spin resonance (ESR) technique allowed the structural identification of several radiation-induced point defects, among which the Ge(1) (GeO4 -) is found to be responsible of induced OA in the investigated spectral region.
Radiation Response of Ce-Doped Phosphosilicate Optical Fibers
2014
International audience; We report an experimental study of the radiation effects on silica-based multimode optical fibers (OFs) either doped with Phosphorus or with Phosphorus and Cerium. Online Radiation-Induced-Absorption (RIA) measurements were performed in the UV-visible spectral domain under 10 keV X-ray Irradiation. Optical Absorption (OA) in the Near Infrared Region (NIR) and Electron Paramagnetic Resonance (EPR) measurements were also performed on γ-irradiated OFs.