Search results for "IRRADIATION"
showing 10 items of 1012 documents
Photostimulated emission of KBr—In previously exposed to UV- or X-radiation
1995
Abstract We have performed a photostimulated luminescence (PSL) study of a KBr—In crystal previously irradiated in the exciton fundamental absorption band. It is shown that the PSL arises from three types of close defect pair. It is also shown that one of these three kinds of defect pairs is {F, In2+}, whereas the electron centre of the two other pairs has a more complex nature.
Hardening and formation of dislocation structures in LiF crystals irradiated with MeV–GeV ions
2002
Abstract Material modifications of LiF crystals irradiated with Au, Pb and Bi ions of MeV to GeV energy are studied by means of microindentation measurements and dislocation etching. Above a critical irradiation fluence of 10 9 ions/cm 2 , the microhardness can improve by a factor of 2 in the bulk and by more than 3 on the surface. Radiation-induced hardening follows the evolution of the energy loss along the ion path. Annealing experiments indicate that complex defect aggregates created in the tracks play a major role for the hardness change. Evidence for severe structural modifications is found when etching indentation impressions in highly irradiated crystals leading to similar pattern a…
<title>Optical properties of hydrogen-containing MgO crystal</title>
2008
The photoluminescence (PL), its excitation (PLE) and absorption spectra in ultraviolet, visible and infrared (UV-VIS-IR) regions were used to investigate the MgO single crystals irradiated by fast neutrons. It is shown that the photoluminescence band of the MgO crystals at 730 nm belongs to the hydrogen-containing complex centers V-OH-Fe3+, which are transformed during the irradiation with fast neutrons. The behavior of the PL band 730 nm after fast neutron irradiation depends on the iron-chromium concentration. It is found that the fast neutron irradiation produces the interstitial proton H+i and the Mg(OH)2 microphase.© (2008) COPYRIGHT SPIE--The International Society for Optical Engineer…
Photostimulated processes in the CsI-Tl crystal after UV irradiation
1997
The photostimulated luminescence is studied for CsI-Tl crystal after irradiation with ultraviolet light in the 80 - 300 K temperature range. The PSL creation spectrum coincides with the D absorption band at 80 K. Three bands are observed in the stimulation spectra at 80 K: 1400, 950, and 600 nm. The 1400 and 950 nm stimulation bands are presumably explained as optical transitions in the Tl 0 and V k centers situated in the spatial correlated pairs. The stimulation at 600 nm band is ascribed to the unperturbed Tl 0 centers.
Formation of complex defects in Mn c Mg 1–c O and Ni c Mg 1–c O single solid solution
2005
The results of investigation of the fast neutron irradiation and thermal treatment on absorption spectra of single solid solution of MncMg1–cO, NicMg1–cO and MgO crystals are presented. It is shown that at impurity ion concentration larger than 0.1 mass.% a probability of formation of aggregate centers consisting of more than three F+- or F-centers is small. After thermal treatment of MncMg1–cO and NicMg1–cO single solid solution irradiated by fast neutrons additional wide bands are observed. We assume that these additional bands belong to complex centers of Mn3+-VMg and Ni3+-VMg. The mechanisms of bands formation are discussed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
host‐defect luminescence of stishovite
2005
a detailed study of the 4.75 eV luminescence band of stishovite single crystal (SiO2 with rutile structure) is reported. Kinetics of luminescence intensity is studied at durable (tens of minutes) X-ray excitation. The observed behaviour of the band intensity is explained by creation and destruction of luminescence centres depending on temperature both being determined by radiation stimulated diffusion of atomic particles. The luminescence decay is observed to last for minutes after X-ray irradiation while only for ns and hundreds of µs under pulsed e-beam irradiation suggesting a complicated recombination of the created defects. The UV band of stishovite is compared with the 4.9 eV luminesc…
Modification of LiF structure by irradiation with swift heavy ions under oblique incidence
2013
The structural modifications of LiF irradiated with swift heavy ions under oblique angles have been investigated using AFM, SEM, chemical etching, nanoindentation and optical absorption spectroscopy. LiF crystals were irradiated under incidence angles of 30 and 70 degrees with 2.2 GeV Au (fluence 57?l011 ions-cm2) and 150 MeV Kr ions (fluence 1012?1014 ions?cm?2). Structural study on sample cross-sections shows that two damage regions ? (1) nanostructured zone and (2) dislocation ? rich zone, which are typical for irradiations at normal incidence, appear also in samples irradiated under oblique angles. However in the latter case a more complex structure is formed that leads to stronger ion-…
Photoconversion and dynamic hole recycling process in anion vacancies in neutron-irradiated MgO crystals
1999
Optical spectroscopy and theory demonstrate that photon excitation of the positively charged anion vacancies (F{sup +} centers) at 5.0 eV in neutron-irradiated MgO crystals releases holes that are subsequently trapped at {ital V}-type centers, which are cation vacancies charge compensated by impurities, such as Al{sup 3+}, F{sup {minus}}, and OH{sup {minus}} ions. The concentration of trapped-hole centers was found to exceed that of available anion vacancies. The disproportionately large amount of holes produced is attributed to a dynamic recycling process, by which the F{sup +} center serves to release a hole to the {ital V}-type centers and subsequently trap a hole from an Fe{sup 3+} ion.…
<title>Heavy-ion induced damage and reduction of dislocation mobility in LiF single crystals</title>
2006
Ion-induced reduction of dislocation mobility in LiF crystals irradiated with swift heavy (U) and light (Ni) ions of a specific energy of 11 MeV per nucleon at fluences between 106 and 1011 ions/cm2 was studied. The arm length of dislocation rosettes produced by indentation on (100) irradiated surface was measured. It has been found that in the case of heavy ions the threshold fluence (106 ions/cm2) for impeding of dislocation arms is about 3 orders of magnitude lower than that for light ions. The results indicate that ion-induced defect aggregates play the dominating role in the impeding of dislocations. Heavy ions, which produce defect aggregates in the track core, cause also a stronger e…
Hardening in LiF induced by fast Ni ions and recovery of properties under annealing
2005
The recovery of hardness and optical absorbance of LiF crystals irradiated with 640 MeV nickel ions under annealing at 450–810 K is investigated. Recovery of the hardness of irradiated crystals is initiated at temperatures above 530 K, at which a transition from a complex absorption spectrum to a spectrum with only one broad peak at 275 nm is observed. Activation energy of 0.13 eV ± 0.02 eV, which is close to that necessary for migration of H centers, is obtained from the annealing data. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)