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Hydrogen- and helium-implanted silicon: Low-temperature positron-lifetime studies
1991
High-purity single-crystal samples of float-zoned Si have been implanted with 6.95-MeV protons and with 25-MeV {sup 3}He{sup 2} ions at 15 K, and the positron-lifetime technique has been used to identify the defects created in the samples, and to study the effects of H and He on the annealing of point defects in Si. The results have been compared with those of proton-irradiated Si. A 100--300-K annealing stage was clearly observed in hydrogen (H{sup +}) -implanted Si, and this stage was almost identical to that in the {ital p}-irradiated Si. The final annealing state of the H{sup +}-implanted Si started at about 400 K, and it is connected to annealing out of negatively charged divacancy-oxy…
Laser ablation of a silicon target in chloroform: formation of multilayer graphite nanostructures
2013
With the use of high-resolution transmission electron microscopy, selected area electron diffraction and x-ray photoelectron spectroscopy methods of analysis we show that the laser ablation of a Si target in chloroform (CHCl3) by nanosecond UV pulses (40 ns, 355 nm) results in the formation of about 50–80 nm core–shell nanoparticles with a polycrystalline core composed of small (5–10 nm) Si and SiC mono-crystallites, the core being coated by several layers of carbon with the structure of graphite (the shell). In addition, free carbon multilayer nanostructures (carbon nano-onions) are also found in the suspension. On the basis of a comparison with similar laser ablation experiments implement…
Oxidation of silicon nanoparticles produced by nanosecond laser ablation in liquids
2014
We investigated nanoparticles produced by laser ablation of silicon in water by the fundamental harmonic (1064 nm) of a ns pulsed Nd:YAG. The silicon oxidation is evidenced by IR absorption features characteristic of amorphous SiO2 (silica). This oxide is highly defective and manifests a luminescence activity under UV excitation: two emission bands at 2.7 eV and 4.4 eV are associated with the twofold coordinated silicon, =SiO••.
Multi-spectral photoplethysmography technique for parallel monitoring of pulse shapes at different tissue depths
2011
A photoplethysmography (PPG) signal can provide very useful information about a subject's hemodynamic status in a hospital or home environment. A newly developed portable multi-spectral photoplethysmography device has been used for studies of 11 healthy subjects. Multi-spectral photoplethysmography (MS-PPG) biosensor intended for analysis of peripheral blood volume pulsations at different vascular depths has been designed and experimentally tested. Multi-spectral monitoring was performed by means of a three–wavelengths (405 nm, 660 nm and 780 nm) laser diode and a single photodiode with multi-channel signal output processing. The proposed methodology and potential clinical applications are …
SIMULATION OF THERMAL EFFECTS IN OPTOELECTRONIC DEVICES USING COUPLED ENERGY-TRANSPORT AND CIRCUIT MODELS
2008
A coupled model with optoelectronic semiconductor devices in electric circuits is proposed. The circuit is modeled by differential-algebraic equations derived from modified nodal analysis. The transport of charge carriers in the semiconductor devices (laser diode and photo diode) is described by the energy-transport equations for the electron density and temperature, the drift-diffusion equations for the hole density, and the Poisson equation for the electric potential. The generation of photons in the laser diode is modeled by spontaneous and stimulated recombination terms appearing in the transport equations. The devices are coupled to the circuit by the semiconductor current entering the…
1.65-μm Er:Yb:YAG diode-pumped laser delivering 80-mJ pulse energy
2005
We demonstrate efficient lasing of bulk diode-pumped Er 31 :Yb 31 :YAG at 1.645 mm. The material is transversely pumped using three quasi-cw 960-nm laser diode arrays in a simple arrangement. In the free-running mode of operation, an output pulse energy of 79 mJ is obtained at 4.7 J of incident optical pump energy. The lasing threshold lies in the range 1.0 to 1.9 J in long-pulse operation, depending on pumping conditions, and optical slope efficiencies of 2.2% to 3.4% were measured with respect to the incident pump energy. Furthermore, initial Q-switching experiments with a Co:MALO saturable absorber yielded pulses of 1.7-mJ energy and 340-ns FWHM duration. As the reported laser setup also…
Heat transfer in semi-transparent materials during laser interaction
2004
Abstract A model of energy exchange, based on the finite element method is specially developed to determine the thermal field for semi-transparent polymers irradiated by laser. Our model, which uses the finite element method, allows to define the laser and specific structure characteristics in terms of density of power, speed and shape of the spotlight, material coefficient absorption, etc. The model has been experimentally validated by measuring the thermal response induced by the laser source. The experimental part of the study has been performed using a semiconductor laser diode source and an infrared thermography camera.
Germanium microparticles as optically induced oscillators in optical tweezers
2019
Oscillatory dynamics is a key tool in optical tweezers applications. It is usually implemented by mechanical interventions that cannot be optically controlled. In this work we show that Germanium semiconductor beads behave as optically induced oscillators when subjected to a highly focused laser beam. Such unusual motion is due to the competition between the usual optical forces [1-3] and the radiometric force related to thermal effects, which pushes the beads from the focal region [4]. We characterize the behavior of the Germanium beads in detail and propose a model accounting for the related forces, in good agreement with the experimental data. The well defined direction of oscillations c…
Hybrid organic-inorganic light-emitting diodes.
2011
The demonstration of colour tunability and high efficiency has brought organic light-emitting diodes (OLEDs) into the displays and lighting market. However, high production costs due to expensive deposition techniques and the use of reactive materials still limit their market entry, highlighting the need for novel concepts. This has driven the research towards the integration of both organic and inorganic materials into devices that benefit from their respective peculiar properties. The most representative example of this tendency is the application of metal oxides in organic optoelectronics. Metal oxides combine properties such as high transparency, good electrical conductivities, tuneable…
Atomic force microscopy visualization of injuries in Enterococcus faecalis surface caused by Er,Cr:YSGG and diode lasers
2014
Aim: To visualize by Atomic Force Microscopy the alterations induced on Enterococcus. faecalis surface after treatment with 2 types of laser: Erbium chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser and Diode laser. Material and Methods: Bacterial suspensions from overnight cultures of E. faecalis were irradiated during 30 seconds with the laser-lights at 1 W and 2 W of power, leaving one untreated sample as control. Surface alterations on treated E. faecalis were visualized by Atomic Force Microscopy (AFM) and its surface roughness determined. Results: AFM imaging showed that at high potency of laser both cell morphology and surface roughness resulted altered, and that several ce…