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New Results on High-Resolution 3-D CZT Drift Strip Detectors
2020
Intense research activities have been carry out in the development of room temperature gamma ray spectroscopic imagers, aiming to compete with the excellent energy resolution of high-purity germanium (HPGe) detectors (0.3 % FWHM at 662 keV) obtained after cryogenic cooling. Cadmium-zinc-telluride (CZT) detectors equipped with pixel, strip and virtual Frisch-grid electrode structures represented an appealing solution for room temperature measurements. In this work, we present the performance of new high-resolution CZT drift strip detectors (19.4 x 19.4 x 6 mm3), recently fabricated at IMEM-CNR of Parma (Italy) in collaboration with due2lab company (Reggio Emilia, Italy). The detectors, worki…
Dark-Line Atomic Resonances in Micrometric Rb-Vapor Layer
2007
We present measurements of dark-line resonances excited in Rb atomic vapor confined in micrometric cells (MC). In our work, the Lambda-systems on D2 line of 85Rb have been studied with the use of bi-chromatic radiation of two separate narrowband diode lasers.
Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
2017
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40nm) nitride spacers. As a result a single, silicide island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices fabricated using e-beam lithography is…
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs
2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R) characteristic…
A model of biomass char gasification describing the change in catalytic activity of ash
2012
A comprehensive description of catalytic effects during char gasification under various conditions relevant to biomass gasification was made. A three-parallel reaction model was proposed to describe the dynamic change in catalytic activity of ash during gasification of biomass char particles. Three different regimes of conversion were identified by analyzing char reactivity experiments conducted in a vertical TGA with nine biomasses under a wide range of operating conditions (temperature: 1023–1123 K, pressure: 0.1–3.0 MPa and gasification mixtures of CO2–CO–H2O–H2): (1) catalytic char gasification with deactivation of catalyst, (2) non-catalytic char gasification, and (3) catalytic char ga…
Semiconductor-metal transitions in liquidIn100−xSexalloys: A concentration-induced transition
2004
The electronic and structural properties of ${\mathrm{In}}_{100\ensuremath{-}x}{\mathrm{Se}}_{x}$ liquid alloys close to their melting points have been investigated by combining x-ray-absorption experiments with ab initio molecular-dynamics simulations. Extended x-ray-absorption fine-structure data have been acquired at both the In and Se K edges in a large concentration range $(x=20%$ to $x=50%$ of Se content). Ab initio molecular-dynamics simulations have been carried out at the two most extreme concentrations explored experimentally. Liquid InSe is found to retain a semiconducting behavior which results from a low-dimensional structure, reminiscent of that of the ambient solid phase, cha…
Epitaxial thin films of intermetallic compounds
2002
Publisher Summary The potential of epitaxial thin films of intermetallic compounds in basic and applied research is emerging. Although the growth of semiconductor heterostructures and compounds based on molecular beam epitaxy (MBE) and related methods has come through a 30-year history of ongoing refinement and sophistication, still much has to be learned concerning the growth and characterization of even moderately complex metallic thin film structures. MBE represents a well-defined crystallization technique based on the reactions among molecular or atomic beams of the constituent elements on a substrate or template at elevated temperatures in an ultrahigh vacuum (UHV) environment. Owing t…
Ab initio study of the mechanical and electronic properties of scheelite-type XWO4(X = Ca, Sr, Ba) compounds
2017
The structural, mechanical, and electronic properties of scheelite-type CaWO4, SrWO4, and BaWO4 have been investigated using density-functional theory (DFT) within the generalized-gradient approximation (GGA). In particular, we have studied the effect of pressure in the crystal structure, elastic constants [Formula: see text], elastic moduli ([Formula: see text], [Formula: see text] and [Formula: see text]), and elastic anisotropy. We have also investigated the band structure of the three studied compounds and the effect of pressure in their electronic bandgap. The obtained results compare well with experimental results regarding the high-pressure (HP) behavior of the crystal structure. Th…
I-II-V half-Heusler compounds for optoelectronics:Ab initiocalculations
2010
Half-Heusler compounds $XYZ$ crystallize in the space group $F\overline{4}3m$ and can be viewed as a zinc-blende-like ${(YZ)}^{\ensuremath{-}}$ lattice partially filled with He-like ${X}^{+}$ interstitials. In this work, we investigated I-II-V (eight-electrons) half-Heusler compounds by first-principles calculations in order to find suitable semiconductors for optoelectronics such as Cd-free buffer layer materials for chalcopyrite-based thin-film solar-cell devices. We report a systematic examination of band gaps and lattice parameters, depending on the electronegativities and the ion radii of the involved elements. Half-Heusler buffer materials should have a band gap of more than 2 eV to a…
Effect of Charge Transfer in Magnetic-Plasmonic Au@MOx (M = Mn, Fe) Heterodimers on the Kinetics of Nanocrystal Formation
2015
Heteronanoparticles represent a new class of nanomaterials exhibiting multifunctional and collective properties, which could find applications in medical imaging and therapy, catalysis, photovoltaics, and electronics. This present work demonstrates the intrinsic heteroepitaxial linkage in heterodimer nanoparticles to enable interaction of the individual components across their interface. It revealed distinct differences between Au@MnO and Au@Fe3O4 regarding the synthetic procedure and growth kinetics, as well as the properties to be altered by the variation of the electronic structure of the metal oxides. The chemically related metal oxides differ concerning their band gap; while MnO is a M…