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Elucidating the electron transport in semiconductors via Monte Carlo simulations: An inquiry-driven learning path for engineering undergraduates
2015
Within the context of higher education for science or engineering undergraduates, we present an inquiry-driven learning path aimed at developing a more meaningful conceptual understanding of the electron dynamics in semiconductors in the presence of applied electric fields. The electron transport in a nondegenerate n-type indium phosphide bulk semiconductor is modelled using a multivalley Monte Carlo approach. The main characteristics of the electron dynamics are explored under different values of the driving electric field, lattice temperature and impurity density. Simulation results are presented by following a question-driven path of exploration, starting from the validation of the model…
Electric conduction in semiconductors: a pedagogical model based on the Monte Carlo method
2008
We present a pedagogic approach aimed at modelling electric conduction in semiconductors in order to describe and explain some macroscopic properties, such as the characteristic behaviour of resistance as a function of temperature. A simple model of the band structure is adopted for the generation of electron–hole pairs as well as for the carrier transport in moderate electric fields. The semiconductor behaviour is described by substituting the traditional statistical approach (requiring a deep mathematical background) with microscopic models, based on the Monte Carlo method, in which simple rules applied to microscopic particles and quasi-particles determine the macroscopic properties. We …
Monte Carlo Analysis of Voltage-Current Characteristic Nonlinearity and Harmonic Generation in Submicron Semiconductor Structures
2006
Using a multiparticles Monte Carlo technique, we investigate the dependence of the nonlinear carrier dynamics in GaAs n+nn+ structures operating under very intense sub-terahertz signals from some process parameters as: i) the frequency and the intensity of the excitation signal and ii) the length of the n region
Preliminary radiation hardness tests of single photon Si detectors
2010
Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25 degrees C to 65 degrees C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3x10(7)-5x10(10) cm(-2), and X-rays irradiations in the range 0.5-20 krad(Si). Optical characterization was performed using a laser at 659 nm and opportunely chosen filters to vary the…
Source of Polarized Electrons for MAMI B
1991
A source of polarized electrons has been set up in order to inject polarized electrons into the 855 MeV c.w. electron accelerator MAMI B at the Mainz nuclear physics institute. It is based on photoemission of the 3/5 semiconductor GaAsP and will provide a d.c. current of 100 µA with a beam emittance of 1π mm mrad, and a polarization of about 40%.
Vortex beam generation and other advanced optics experiments reproduced with a twisted-nematic liquid-crystal display with limited phase modulation
2016
In this work we propose the use of twisted-nematic liquid-crystal spatial light modulators (TN-LC-SLM) as a useful tool for training students in the manipulation of light beams with phase-only masks. In particular, we focus the work on the realization of phase-only gratings and phase-only spiral phases for the generation of vortex beams, beams carrying orbital angular momentum (OAM). Despite the extensive activity in this field, its experimental implementation for educational purposes is limited because it requires the use of very expensive high-resolution liquid-crystal on silicon (LCOS) SLMs. Here, we show that a low-cost experimental implementation can be done with older TNLC technology.…
Nonlinear Current Generation in Degenerate Semiconductors Embedded in Constant and Low-Frequency Electric Fields
2006
The explicit analytical forms of nonlinear currents in degenerate semiconductors serving as sources of coherent radiation in the wavelength millimetric and submillimetric ranges are established.
Reduced dynamical equations for solid-state lasers and VCSELs
2007
It is the aim of this presentation to show that a reduction in the number of coupled equations is feasible for spatio-temporal laser models with generic values of the pump and other parameters. Reduced equations have been derived via the application of two separate, yet equivalent, methods: one based on the CM and the other on operational calculus. The long term dynamics of the reduced models for solid-state lasers and VCSELs have been compared with that of the full systems by using both mathematical methods. Extensive numerical simulations for the complex dynamics of these and other laser models become suddenly feasible within reasonable computational time.
The role of nonlinear optical absorption in narrowband difference-frequency terahertz-wave generation
2010
We present a general analysis of the influence of nonlinear optical absorption on terahertz generation via optical difference frequency generation, when reaching for the quantum conversion efficiency limit. By casting the equations governing the process in a suitably normalized form, including either two-photon- or three-photon-absorption terms, we have been able to plot universal charts for phase matched optical-to-terahertz conversion for different values of the nonlinear absorption coefficients. We apply our analysis to some experiments reported to date, in order to understand to what extent multiphoton absorption could have played a role and also to predict the maximum achievable conver…
Searches for neutrinoless resonant double electron captures at LNGS
2012
Several experiments were performed during last years at underground (3600 m w.e.) Laboratori Nazionali del Gran Sasso (LNGS) of the INFN (Italy) to search for resonant 2$\varepsilon0\nu$ captures in 96Ru, 106Cd, 136Ce, 156Dy, 158Dy, 180W, 184Os, 190Pt with the help of HP Ge semiconductor detectors, and ZnWO4 and 106CdWO4 crystal scintillators. No evidence for r-2$\varepsilon0\nu$ decays was found, and only T_{1/2} limits were established in the range of 10^{14}-10^{21} yr.